FR2168936B1 - - Google Patents

Info

Publication number
FR2168936B1
FR2168936B1 FR7202669A FR7202669A FR2168936B1 FR 2168936 B1 FR2168936 B1 FR 2168936B1 FR 7202669 A FR7202669 A FR 7202669A FR 7202669 A FR7202669 A FR 7202669A FR 2168936 B1 FR2168936 B1 FR 2168936B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7202669A
Other versions
FR2168936A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR7202669A priority Critical patent/FR2168936B1/fr
Priority to US326038A priority patent/US3887404A/en
Priority to IT67126/73A priority patent/IT984344B/it
Priority to GB363273A priority patent/GB1417317A/en
Priority to JP1038873A priority patent/JPS5622136B2/ja
Priority to DE2303798A priority patent/DE2303798C2/de
Publication of FR2168936A1 publication Critical patent/FR2168936A1/fr
Application granted granted Critical
Publication of FR2168936B1 publication Critical patent/FR2168936B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30617—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
FR7202669A 1972-01-27 1972-01-27 Expired FR2168936B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7202669A FR2168936B1 (fr) 1972-01-27 1972-01-27
US326038A US3887404A (en) 1972-01-27 1973-01-23 Method of manufacturing semiconductor devices
IT67126/73A IT984344B (it) 1972-01-27 1973-01-24 Procedimento per la fabbricazione di dispositivi semiconduttori me diante incisione chimica locale
GB363273A GB1417317A (en) 1972-01-27 1973-01-24 Etching semiconductor devices
JP1038873A JPS5622136B2 (fr) 1972-01-27 1973-01-26
DE2303798A DE2303798C2 (de) 1972-01-27 1973-01-26 Verfahren zum Herstellen von Halbleiterbauelementen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7202669A FR2168936B1 (fr) 1972-01-27 1972-01-27

Publications (2)

Publication Number Publication Date
FR2168936A1 FR2168936A1 (fr) 1973-09-07
FR2168936B1 true FR2168936B1 (fr) 1977-04-01

Family

ID=9092523

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7202669A Expired FR2168936B1 (fr) 1972-01-27 1972-01-27

Country Status (6)

Country Link
US (1) US3887404A (fr)
JP (1) JPS5622136B2 (fr)
DE (1) DE2303798C2 (fr)
FR (1) FR2168936B1 (fr)
GB (1) GB1417317A (fr)
IT (1) IT984344B (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5243370A (en) * 1975-10-01 1977-04-05 Hitachi Ltd Method of forming depression in semiconductor substrate
US4187125A (en) * 1976-12-27 1980-02-05 Raytheon Company Method for manufacturing semiconductor structures by anisotropic and isotropic etching
US4099305A (en) * 1977-03-14 1978-07-11 Bell Telephone Laboratories, Incorporated Fabrication of mesa devices by MBE growth over channeled substrates
JPS605560B2 (ja) * 1977-07-02 1985-02-12 富士通株式会社 インジウムリン単結晶の鏡面エツチング方法
US4215319A (en) * 1979-01-17 1980-07-29 Rca Corporation Single filament semiconductor laser
US4286374A (en) * 1979-02-24 1981-09-01 International Computers Limited Large scale integrated circuit production
NL7903197A (nl) * 1979-04-24 1980-10-28 Philips Nv Werkwijze voor het vervaardigen van een elektrolumines- cerende halfgeleiderinrichting en elektroluminescerende halfgeleiderinrichting vervaardigd volgens de werkwijze
US4347486A (en) * 1979-10-12 1982-08-31 Rca Corporation Single filament semiconductor laser with large emitting area
DE3170598D1 (en) * 1980-12-31 1985-06-27 Ibm Miniature electrical connectors and methods of fabricating them
US4754316A (en) * 1982-06-03 1988-06-28 Texas Instruments Incorporated Solid state interconnection system for three dimensional integrated circuit structures
US4518456A (en) * 1983-03-11 1985-05-21 At&T Bell Laboratories Light induced etching of InP by aqueous solutions of H3 PO4
FR2548220B1 (fr) * 1983-07-01 1987-07-31 Labo Electronique Physique Guide d'onde lumineuse sur materiau semi-conducteur
JPS6158273A (ja) * 1984-08-29 1986-03-25 Hitachi Ltd 化合物半導体メサ状構造体
US4984035A (en) * 1984-11-26 1991-01-08 Hitachi Cable, Ltd. Monolithic light emitting diode array
EP0209194B1 (fr) * 1985-07-15 1991-04-17 Koninklijke Philips Electronics N.V. Procédé de fabrication d'un dispositif semi-conducteur, comportant l'attaque chimique d'une couche de Ga-As à l'aide d'une solution alcaline de peroxyde d'hydrogène
DE3677735D1 (de) * 1985-12-17 1991-04-04 Max Planck Gesellschaft Verfahren zur herstellung von halbleitersubstraten.
FR2617870B1 (fr) * 1987-07-09 1989-10-27 Labo Electronique Physique Procede de realisation de plaquettes-substrats orientees, a partir de lingots massifs semi-conducteurs du groupe iii-v
US4774555A (en) * 1987-08-07 1988-09-27 Siemens Corporate Research And Support, Inc. Power hemt structure
SE9304145D0 (sv) * 1993-12-10 1993-12-10 Pharmacia Lkb Biotech Sätt att tillverka hålrumsstrukturer
DE4427840A1 (de) * 1994-07-28 1996-02-01 Osa Elektronik Gmbh Verfahren zur Effizienzerhöhung von A¶I¶¶I¶¶I¶B¶V¶ - Halbleiter-Chips
GB2297626A (en) * 1995-01-27 1996-08-07 Cambridge Consultants Miniature mounting grooved substrate
US6514805B2 (en) * 2001-06-30 2003-02-04 Intel Corporation Trench sidewall profile for device isolation
JP2003282939A (ja) * 2002-03-26 2003-10-03 Oki Degital Imaging:Kk 半導体発光装置及びその製造方法
KR100529632B1 (ko) * 2003-10-01 2005-11-17 동부아남반도체 주식회사 반도체 소자 및 그 제조 방법
US7141486B1 (en) * 2005-06-15 2006-11-28 Agere Systems Inc. Shallow trench isolation structures comprising a graded doped sacrificial silicon dioxide material and a method for forming shallow trench isolation structures

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3156596A (en) * 1961-12-29 1964-11-10 Bell Telephone Labor Inc Method for polishing gallium arsenide
US3262825A (en) * 1961-12-29 1966-07-26 Bell Telephone Labor Inc Method for etching crystals of group iii(a)-v(a) compounds and etchant used therefor
US3342652A (en) * 1964-04-02 1967-09-19 Ibm Chemical polishing of a semi-conductor substrate
US3425879A (en) * 1965-10-24 1969-02-04 Texas Instruments Inc Method of making shaped epitaxial deposits
US3480491A (en) * 1965-11-17 1969-11-25 Ibm Vapor polishing technique
GB1165187A (en) * 1965-12-30 1969-09-24 Texas Instruments Inc Semiconductor Structure Employing a High Resistivity Gallium Arsenide Substrate
US3765984A (en) * 1968-07-17 1973-10-16 Minnesota Mining & Mfg Apparatus for chemically polishing crystals
US3762945A (en) * 1972-05-01 1973-10-02 Bell Telephone Labor Inc Technique for the fabrication of a millimeter wave beam lead schottkybarrier device
US3801391A (en) * 1972-09-25 1974-04-02 Bell Telephone Labor Inc Method for selectively etching alxga1-xas multiplier structures

Also Published As

Publication number Publication date
GB1417317A (en) 1975-12-10
IT984344B (it) 1974-11-20
US3887404A (en) 1975-06-03
JPS4885084A (fr) 1973-11-12
DE2303798C2 (de) 1983-10-13
DE2303798A1 (de) 1973-08-02
JPS5622136B2 (fr) 1981-05-23
FR2168936A1 (fr) 1973-09-07

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Legal Events

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CD Change of name or company name
ST Notification of lapse