IT1140886B - Dispositivo semiconduttore ad elettroluminescenza - Google Patents

Dispositivo semiconduttore ad elettroluminescenza

Info

Publication number
IT1140886B
IT1140886B IT21530/80A IT2153080A IT1140886B IT 1140886 B IT1140886 B IT 1140886B IT 21530/80 A IT21530/80 A IT 21530/80A IT 2153080 A IT2153080 A IT 2153080A IT 1140886 B IT1140886 B IT 1140886B
Authority
IT
Italy
Prior art keywords
semiconducting
electroluminescent device
electroluminescent
semiconducting electroluminescent
Prior art date
Application number
IT21530/80A
Other languages
English (en)
Other versions
IT8021530A0 (it
Inventor
Rudolf Paulus Tijburg
Van Teunis Dongen
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT8021530A0 publication Critical patent/IT8021530A0/it
Application granted granted Critical
Publication of IT1140886B publication Critical patent/IT1140886B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
IT21530/80A 1979-04-24 1980-04-21 Dispositivo semiconduttore ad elettroluminescenza IT1140886B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7903197A NL7903197A (nl) 1979-04-24 1979-04-24 Werkwijze voor het vervaardigen van een elektrolumines- cerende halfgeleiderinrichting en elektroluminescerende halfgeleiderinrichting vervaardigd volgens de werkwijze

Publications (2)

Publication Number Publication Date
IT8021530A0 IT8021530A0 (it) 1980-04-21
IT1140886B true IT1140886B (it) 1986-10-10

Family

ID=19833037

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21530/80A IT1140886B (it) 1979-04-24 1980-04-21 Dispositivo semiconduttore ad elettroluminescenza

Country Status (7)

Country Link
US (1) US4341010A (it)
JP (1) JPS55143082A (it)
DE (1) DE3015422A1 (it)
FR (1) FR2455365A1 (it)
GB (1) GB2047962B (it)
IT (1) IT1140886B (it)
NL (1) NL7903197A (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4276098A (en) * 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
US4751708A (en) * 1982-03-29 1988-06-14 International Business Machines Corporation Semiconductor injection lasers
GB8406432D0 (en) * 1984-03-12 1984-04-18 British Telecomm Semiconductor devices
GB8413170D0 (en) * 1984-05-23 1984-06-27 British Telecomm Production of semiconductor devices
CA1247947A (en) * 1984-07-31 1989-01-03 Masaru Wada Method of manufacturing semiconductor device
US4652333A (en) * 1985-06-19 1987-03-24 Honeywell Inc. Etch process monitors for buried heterostructures
JP2822195B2 (ja) * 1989-01-19 1998-11-11 ソニー株式会社 半導体レーザーの製造方法
JPH02199892A (ja) * 1989-01-27 1990-08-08 Nec Corp 半導体レーザの製造方法
US5179035A (en) * 1989-09-15 1993-01-12 U.S. Philips Corporation Method of fabricating two-terminal non-linear devices
DE4427840A1 (de) * 1994-07-28 1996-02-01 Osa Elektronik Gmbh Verfahren zur Effizienzerhöhung von A¶I¶¶I¶¶I¶B¶V¶ - Halbleiter-Chips
US6355567B1 (en) * 1999-06-30 2002-03-12 International Business Machines Corporation Retrograde openings in thin films
KR100529632B1 (ko) * 2003-10-01 2005-11-17 동부아남반도체 주식회사 반도체 소자 및 그 제조 방법
US7141486B1 (en) * 2005-06-15 2006-11-28 Agere Systems Inc. Shallow trench isolation structures comprising a graded doped sacrificial silicon dioxide material and a method for forming shallow trench isolation structures
CN112968099B (zh) * 2020-08-06 2022-02-25 重庆康佳光电技术研究院有限公司 一种氧化铝图形化方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2168936B1 (it) * 1972-01-27 1977-04-01 Labo Electronique Physique
US3824493A (en) * 1972-09-05 1974-07-16 Bell Telephone Labor Inc Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror
US3865646A (en) * 1972-09-25 1975-02-11 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US3833435A (en) * 1972-09-25 1974-09-03 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US4121177A (en) * 1973-05-28 1978-10-17 Hitachi, Ltd. Semiconductor device and a method of fabricating the same
JPS5269285A (en) * 1975-12-05 1977-06-08 Matsushita Electric Ind Co Ltd Semiconductor laser device
US4178564A (en) * 1976-01-15 1979-12-11 Rca Corporation Half wave protection layers on injection lasers
US4171234A (en) * 1976-07-20 1979-10-16 Matsushita Electric Industrial Co., Ltd. Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles
NL7609607A (nl) * 1976-08-30 1978-03-02 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US4230997A (en) * 1979-01-29 1980-10-28 Bell Telephone Laboratories, Incorporated Buried double heterostructure laser device

Also Published As

Publication number Publication date
FR2455365B1 (it) 1985-02-15
DE3015422C2 (it) 1987-12-03
US4341010A (en) 1982-07-27
FR2455365A1 (fr) 1980-11-21
DE3015422A1 (de) 1980-11-06
NL7903197A (nl) 1980-10-28
GB2047962B (en) 1983-04-20
GB2047962A (en) 1980-12-03
JPS55143082A (en) 1980-11-08
IT8021530A0 (it) 1980-04-21

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