IT1123772B - Dispositivo semiconduttore ad elementi u-mos - Google Patents

Dispositivo semiconduttore ad elementi u-mos

Info

Publication number
IT1123772B
IT1123772B IT26258/79A IT2625879A IT1123772B IT 1123772 B IT1123772 B IT 1123772B IT 26258/79 A IT26258/79 A IT 26258/79A IT 2625879 A IT2625879 A IT 2625879A IT 1123772 B IT1123772 B IT 1123772B
Authority
IT
Italy
Prior art keywords
semiconductive device
mos elements
mos
elements
semiconductive
Prior art date
Application number
IT26258/79A
Other languages
English (en)
Other versions
IT7926258A0 (it
Inventor
J Rodgers Thorman
Said Ammar Ele
Original Assignee
American Micro Syst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Micro Syst filed Critical American Micro Syst
Publication of IT7926258A0 publication Critical patent/IT7926258A0/it
Application granted granted Critical
Publication of IT1123772B publication Critical patent/IT1123772B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311Gate electrodes for field-effect devices
    • H10D64/411Gate electrodes for field-effect devices for FETs
    • H10D64/511Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/63Vertical IGFETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40Crystalline structures
    • H10D62/405Orientations of crystalline planes
IT26258/79A 1978-10-05 1979-10-04 Dispositivo semiconduttore ad elementi u-mos IT1123772B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94881478A 1978-10-05 1978-10-05

Publications (2)

Publication Number Publication Date
IT7926258A0 IT7926258A0 (it) 1979-10-04
IT1123772B true IT1123772B (it) 1986-04-30

Family

ID=25488272

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26258/79A IT1123772B (it) 1978-10-05 1979-10-04 Dispositivo semiconduttore ad elementi u-mos

Country Status (7)

Country Link
JP (1) JPS5552273A (it)
CA (1) CA1115426A (it)
DE (1) DE2931272A1 (it)
FR (1) FR2438342A1 (it)
GB (1) GB2032686A (it)
IT (1) IT1123772B (it)
NL (1) NL7905402A (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4449285A (en) * 1981-08-19 1984-05-22 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Method for producing a vertical channel transistor
US4546367A (en) * 1982-06-21 1985-10-08 Eaton Corporation Lateral bidirectional notch FET with extended gate insulator
JPS598375A (ja) * 1982-07-05 1984-01-17 Matsushita Electronics Corp 縦型構造電界効果トランジスタ
US5034785A (en) * 1986-03-24 1991-07-23 Siliconix Incorporated Planar vertical channel DMOS structure
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US6335247B1 (en) * 2000-06-19 2002-01-01 Infineon Technologies Ag Integrated circuit vertical trench device and method of forming thereof
JP3531613B2 (ja) 2001-02-06 2004-05-31 株式会社デンソー トレンチゲート型半導体装置及びその製造方法

Also Published As

Publication number Publication date
DE2931272A1 (de) 1980-04-24
FR2438342A1 (fr) 1980-04-30
NL7905402A (nl) 1980-04-09
JPS5552273A (en) 1980-04-16
CA1115426A (en) 1981-12-29
GB2032686A (en) 1980-05-08
IT7926258A0 (it) 1979-10-04

Similar Documents

Publication Publication Date Title
IT1110026B (it) Dispositivo semiconduttore
DK77779A (da) Slaaapparat
ATA238679A (de) Schliessvorrichtung
AT365920B (de) Transportvorrichtung
MX151790A (es) Dispositivo fotovoltaico mejorado
SE7900083L (sv) Halvledaranordning
MX150760A (es) Dispositivo fotovoltaico mejorado
SE7903669L (sv) Konstruktionsanordning
BR7808413A (pt) Dispositivo elevador
BR7906362A (pt) Dispositivo alargador
IT1140886B (it) Dispositivo semiconduttore ad elettroluminescenza
IT1118606B (it) Dispositivo per dorcia
DK112179A (da) Fsstgoerelsesanordning
IT1111929B (it) Dispositivo semiconduttore
IT1113226B (it) Dispositivo emettitore per irrigazione
IT1149814B (it) Struttura semiconduttrice
IT1110956B (it) Dispositivo semiconduttore
IT1123772B (it) Dispositivo semiconduttore ad elementi u-mos
SE7810717L (sv) Forbindelseanordning
IT1122226B (it) Dispositivo semiconduttore
IT1140550B (it) Dispositivo semiconduttore
SE7908188L (sv) Lyftanordning
TR20118A (tr) Hasarat oeldueruecue
BR7900858A (pt) Arranjo semicondutivo
ATA202579A (de) Absackvorrichtung