IT7926258A0 - Dispositivo semiconduttore ad elementi u-mos - Google Patents

Dispositivo semiconduttore ad elementi u-mos

Info

Publication number
IT7926258A0
IT7926258A0 IT7926258A IT2625879A IT7926258A0 IT 7926258 A0 IT7926258 A0 IT 7926258A0 IT 7926258 A IT7926258 A IT 7926258A IT 2625879 A IT2625879 A IT 2625879A IT 7926258 A0 IT7926258 A0 IT 7926258A0
Authority
IT
Italy
Prior art keywords
semiconductor device
mos elements
mos
elements
semiconductor
Prior art date
Application number
IT7926258A
Other languages
English (en)
Other versions
IT1123772B (it
Inventor
Thorman J Rodgers
Ele Said Ammar
Original Assignee
Santa Clara California Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Clara California Usa filed Critical Santa Clara California Usa
Publication of IT7926258A0 publication Critical patent/IT7926258A0/it
Application granted granted Critical
Publication of IT1123772B publication Critical patent/IT1123772B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356Disposition, e.g. buried gate electrode
    • H01L29/4236Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827Vertical transistors

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
IT26258/79A 1978-10-05 1979-10-04 Dispositivo semiconduttore ad elementi u-mos IT1123772B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94881478A 1978-10-05 1978-10-05

Publications (2)

Publication Number Publication Date
IT7926258A0 true IT7926258A0 (it) 1979-10-04
IT1123772B IT1123772B (it) 1986-04-30

Family

ID=25488272

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26258/79A IT1123772B (it) 1978-10-05 1979-10-04 Dispositivo semiconduttore ad elementi u-mos

Country Status (7)

Country Link
JP (1) JPS5552273A (it)
CA (1) CA1115426A (it)
DE (1) DE2931272A1 (it)
FR (1) FR2438342A1 (it)
GB (1) GB2032686A (it)
IT (1) IT1123772B (it)
NL (1) NL7905402A (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4449285A (en) * 1981-08-19 1984-05-22 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Method for producing a vertical channel transistor
US4546367A (en) * 1982-06-21 1985-10-08 Eaton Corporation Lateral bidirectional notch FET with extended gate insulator
JPS598375A (ja) * 1982-07-05 1984-01-17 Matsushita Electronics Corp 縦型構造電界効果トランジスタ
US5034785A (en) * 1986-03-24 1991-07-23 Siliconix Incorporated Planar vertical channel DMOS structure
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US6335247B1 (en) * 2000-06-19 2002-01-01 Infineon Technologies Ag Integrated circuit vertical trench device and method of forming thereof
JP3531613B2 (ja) 2001-02-06 2004-05-31 株式会社デンソー トレンチゲート型半導体装置及びその製造方法

Also Published As

Publication number Publication date
FR2438342A1 (fr) 1980-04-30
CA1115426A (en) 1981-12-29
GB2032686A (en) 1980-05-08
IT1123772B (it) 1986-04-30
NL7905402A (nl) 1980-04-09
JPS5552273A (en) 1980-04-16
DE2931272A1 (de) 1980-04-24

Similar Documents

Publication Publication Date Title
PL212822A1 (pl) Przyrzad polprzewodnikowy
SE7900083L (sv) Halvledaranordning
MX151790A (es) Dispositivo fotovoltaico mejorado
NL190298C (nl) Halfgeleiderinrichting met extra gebied.
AT365920B (de) Transportvorrichtung
MX150760A (es) Dispositivo fotovoltaico mejorado
SE7701434L (sv) Halvledaranordning
SE7701316L (sv) Halvledaranordning
BR7906362A (pt) Dispositivo alargador
IT8021530A0 (it) Dispositivo semiconduttore ad elettroluminescenza.
DK525979A (da) Halvleder-ladnngsoverfoeringsanordning
IT7920774A0 (it) Dispositivo di raccordo di due elementi di canalizzazione.
SE7902980L (sv) Halvledaranordning
DE3022122A1 (de) Halbleitervorrichtung
SE7800782L (sv) Halvledarelement
IT7919985A0 (it) Dispositivo semiconduttore.
IT7926258A0 (it) Dispositivo semiconduttore ad elementi u-mos
SE7901535L (sv) Halvledaranordning
SE7709857L (sv) Halvledardiodanordning
SE8001042L (sv) Halvledaranordning
IT7924514A0 (it) Dispositivo semiconduttore.
SE7810717L (sv) Forbindelseanordning
ATA202579A (de) Absackvorrichtung
DE2951836A1 (de) Schieberartige absperrvorrichtung
MX147594A (es) Aparato semiconductor mejorado