FR2445620A1 - Procede d'attaque par plasma pour la fabrication de dispositifs a semi-conducteurs - Google Patents
Procede d'attaque par plasma pour la fabrication de dispositifs a semi-conducteursInfo
- Publication number
- FR2445620A1 FR2445620A1 FR7919155A FR7919155A FR2445620A1 FR 2445620 A1 FR2445620 A1 FR 2445620A1 FR 7919155 A FR7919155 A FR 7919155A FR 7919155 A FR7919155 A FR 7919155A FR 2445620 A1 FR2445620 A1 FR 2445620A1
- Authority
- FR
- France
- Prior art keywords
- manufacture
- semiconductor devices
- attack process
- plasma attack
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000001020 plasma etching Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
L'invention concerne la fabrication des dispositifs à semi-conducteurs. L'invention utilise une nouvelle catégorie d'agents d'attaque pour améliorer les techniques d'attaque par plasma.L'utilisation de ces agents, dont CF3 Cl est un exemple, améliore la définition de l'attaque de surfaces contenant du silicium, et permet entre autres de mieux diriger l'attaque, pour donner à la région attaquée des parois à profil vertical. Application à la fabrication des circuits intégrés complexes.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/929,569 US4211601A (en) | 1978-07-31 | 1978-07-31 | Device fabrication by plasma etching |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2445620A1 true FR2445620A1 (fr) | 1980-07-25 |
FR2445620B1 FR2445620B1 (fr) | 1985-06-28 |
Family
ID=25458067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7919155A Expired FR2445620B1 (fr) | 1978-07-31 | 1979-07-25 | Procede d'attaque par plasma pour la fabrication de dispositifs a semi-conducteurs |
Country Status (14)
Country | Link |
---|---|
US (1) | US4211601A (fr) |
JP (1) | JPS5521596A (fr) |
AU (1) | AU525807B2 (fr) |
BE (1) | BE877894A (fr) |
CA (1) | CA1124208A (fr) |
DE (1) | DE2930293A1 (fr) |
ES (1) | ES482961A1 (fr) |
FR (1) | FR2445620B1 (fr) |
GB (1) | GB2026396B (fr) |
IE (1) | IE48784B1 (fr) |
IL (1) | IL57889A (fr) |
IT (1) | IT1122657B (fr) |
NL (1) | NL185043C (fr) |
SE (1) | SE441879B (fr) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56100422A (en) * | 1980-01-17 | 1981-08-12 | Toshiba Corp | Plasma etching method |
US4264409A (en) * | 1980-03-17 | 1981-04-28 | International Business Machines Corporation | Contamination-free selective reactive ion etching or polycrystalline silicon against silicon dioxide |
JPS56134738A (en) * | 1980-03-26 | 1981-10-21 | Toshiba Corp | Method of forming pattern |
US4310380A (en) * | 1980-04-07 | 1982-01-12 | Bell Telephone Laboratories, Incorporated | Plasma etching of silicon |
US4314875A (en) * | 1980-05-13 | 1982-02-09 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
US4324611A (en) * | 1980-06-26 | 1982-04-13 | Branson International Plasma Corporation | Process and gas mixture for etching silicon dioxide and silicon nitride |
NL8004005A (nl) * | 1980-07-11 | 1982-02-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
US4340461A (en) * | 1980-09-10 | 1982-07-20 | International Business Machines Corp. | Modified RIE chamber for uniform silicon etching |
DE3216823A1 (de) * | 1982-05-05 | 1983-11-10 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von strukturen von aus metallsilizid und polysilizium bestehenden doppelschichten auf integrierte halbleiterschaltungen enthaltenden substraten durch reaktives ionenaetzen |
US4450042A (en) * | 1982-07-06 | 1984-05-22 | Texas Instruments Incorporated | Plasma etch chemistry for anisotropic etching of silicon |
NL8204437A (nl) * | 1982-11-16 | 1984-06-18 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met behulp van plasma-etsen. |
US4414057A (en) * | 1982-12-03 | 1983-11-08 | Inmos Corporation | Anisotropic silicide etching process |
US4502915B1 (en) * | 1984-01-23 | 1998-11-03 | Texas Instruments Inc | Two-step plasma process for selective anisotropic etching of polycrystalline silicon without leaving residue |
US4778562A (en) * | 1984-08-13 | 1988-10-18 | General Motors Corporation | Reactive ion etching of tin oxide films using neutral reactant gas containing hydrogen |
US4544444A (en) * | 1984-08-15 | 1985-10-01 | General Motors Corporation | Reactive ion etching of tin oxide films using silicon tetrachloride reactant gas |
US4734157A (en) * | 1985-08-27 | 1988-03-29 | International Business Machines Corporation | Selective and anisotropic dry etching |
JPS62111432A (ja) * | 1985-11-08 | 1987-05-22 | Fujitsu Ltd | 半導体装置の製造方法 |
DE3613181C2 (de) * | 1986-04-18 | 1995-09-07 | Siemens Ag | Verfahren zum Erzeugen von Gräben mit einstellbarer Steilheit der Grabenwände in aus Silizium bestehenden Halbleitersubstraten |
US4772569A (en) * | 1986-10-30 | 1988-09-20 | Mitsubishi Denki Kabushiki Kaisha | Method for forming oxide isolation films on french sidewalls |
US4801427A (en) * | 1987-02-25 | 1989-01-31 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US5200158A (en) * | 1987-02-25 | 1993-04-06 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US4917586A (en) * | 1987-02-25 | 1990-04-17 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US4943417A (en) * | 1987-02-25 | 1990-07-24 | Adir Jacob | Apparatus for dry sterilization of medical devices and materials |
US5087418A (en) * | 1987-02-25 | 1992-02-11 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US4818488A (en) * | 1987-02-25 | 1989-04-04 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US4931261A (en) * | 1987-02-25 | 1990-06-05 | Adir Jacob | Apparatus for dry sterilization of medical devices and materials |
US5171525A (en) * | 1987-02-25 | 1992-12-15 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US4976920A (en) * | 1987-07-14 | 1990-12-11 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US5385633A (en) * | 1990-03-29 | 1995-01-31 | The United States Of America As Represented By The Secretary Of The Navy | Method for laser-assisted silicon etching using halocarbon ambients |
US5493445A (en) * | 1990-03-29 | 1996-02-20 | The United States Of America As Represented By The Secretary Of The Navy | Laser textured surface absorber and emitter |
US5300463A (en) * | 1992-03-06 | 1994-04-05 | Micron Technology, Inc. | Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers |
US5716494A (en) * | 1992-06-22 | 1998-02-10 | Matsushita Electric Industrial Co., Ltd. | Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate |
US5356692A (en) * | 1992-07-27 | 1994-10-18 | Lockheed Missiles & Space Company, Inc. | Grid structure with sinuous interstices |
JP3370806B2 (ja) | 1994-11-25 | 2003-01-27 | 株式会社半導体エネルギー研究所 | Mis型半導体装置の作製方法 |
US6165375A (en) * | 1997-09-23 | 2000-12-26 | Cypress Semiconductor Corporation | Plasma etching method |
US6372634B1 (en) | 1999-06-15 | 2002-04-16 | Cypress Semiconductor Corp. | Plasma etch chemistry and method of improving etch control |
US6583065B1 (en) * | 1999-08-03 | 2003-06-24 | Applied Materials Inc. | Sidewall polymer forming gas additives for etching processes |
US6322716B1 (en) | 1999-08-30 | 2001-11-27 | Cypress Semiconductor Corp. | Method for conditioning a plasma etch chamber |
DE10103524A1 (de) * | 2001-01-26 | 2002-08-22 | Infineon Technologies Ag | Verfahren und Halbleiteranordnung zur Ätzung einer Schicht eines Halbleitersubstrats mittels einer siliziumhaltigen Ätzmaske |
US20040224524A1 (en) * | 2003-05-09 | 2004-11-11 | Applied Materials, Inc. | Maintaining the dimensions of features being etched on a lithographic mask |
JP5537324B2 (ja) * | 2010-08-05 | 2014-07-02 | 株式会社東芝 | 半導体装置の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS529353B2 (fr) * | 1972-04-18 | 1977-03-15 | ||
JPS5441870B2 (fr) * | 1972-11-22 | 1979-12-11 | ||
GB1417085A (en) * | 1973-05-17 | 1975-12-10 | Standard Telephones Cables Ltd | Plasma etching |
US3880684A (en) * | 1973-08-03 | 1975-04-29 | Mitsubishi Electric Corp | Process for preparing semiconductor |
US3984301A (en) * | 1973-08-11 | 1976-10-05 | Nippon Electric Varian, Ltd. | Sputter-etching method employing fluorohalogenohydrocarbon etching gas and a planar electrode for a glow discharge |
US4069096A (en) * | 1975-11-03 | 1978-01-17 | Texas Instruments Incorporated | Silicon etching process |
-
1978
- 1978-07-31 US US05/929,569 patent/US4211601A/en not_active Expired - Lifetime
-
1979
- 1979-07-19 CA CA332,164A patent/CA1124208A/fr not_active Expired
- 1979-07-23 SE SE7906300A patent/SE441879B/sv unknown
- 1979-07-25 BE BE0/196454A patent/BE877894A/fr not_active IP Right Cessation
- 1979-07-25 AU AU49235/79A patent/AU525807B2/en not_active Expired
- 1979-07-25 FR FR7919155A patent/FR2445620B1/fr not_active Expired
- 1979-07-25 IL IL57889A patent/IL57889A/xx unknown
- 1979-07-26 GB GB7926039A patent/GB2026396B/en not_active Expired
- 1979-07-26 DE DE19792930293 patent/DE2930293A1/de active Granted
- 1979-07-30 ES ES482961A patent/ES482961A1/es not_active Expired
- 1979-07-30 NL NLAANVRAGE7905869,A patent/NL185043C/xx not_active IP Right Cessation
- 1979-07-30 IT IT24776/79A patent/IT1122657B/it active
- 1979-07-31 JP JP9688079A patent/JPS5521596A/ja active Pending
- 1979-08-08 IE IE1449/79A patent/IE48784B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
IL57889A (en) | 1981-12-31 |
DE2930293A1 (de) | 1980-02-28 |
US4211601A (en) | 1980-07-08 |
NL185043B (nl) | 1989-08-01 |
FR2445620B1 (fr) | 1985-06-28 |
DE2930293C2 (fr) | 1987-04-16 |
NL185043C (nl) | 1990-01-02 |
JPS5521596A (en) | 1980-02-15 |
SE441879B (sv) | 1985-11-11 |
AU525807B2 (en) | 1982-12-02 |
IT1122657B (it) | 1986-04-23 |
BE877894A (fr) | 1979-11-16 |
CA1124208A (fr) | 1982-05-25 |
NL7905869A (nl) | 1980-02-04 |
GB2026396B (en) | 1982-07-07 |
IE48784B1 (en) | 1985-05-15 |
ES482961A1 (es) | 1980-03-01 |
IL57889A0 (en) | 1979-11-30 |
IE791449L (en) | 1980-01-31 |
AU4923579A (en) | 1980-02-07 |
GB2026396A (en) | 1980-02-06 |
IT7924776A0 (it) | 1979-07-30 |
SE7906300L (sv) | 1980-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2445620A1 (fr) | Procede d'attaque par plasma pour la fabrication de dispositifs a semi-conducteurs | |
FR2445622A1 (fr) | Procede de fabrication d'un dispositif par attaque par plasma de surfaces riches en aluminium | |
PT829012E (pt) | Processo de producao de um transdutor de semicondutor | |
FR2372874A1 (fr) | Procede pour la fabrication de revetements antiadhesifs | |
KR890004409A (ko) | 반도체 소자 화학적 엣칭 방법 | |
KR920015474A (ko) | 드라이 에칭 방법 | |
GB1400865A (en) | Semiconductor device manufacture | |
FR69413E (fr) | Procédé pour la fabrication de redresseurs, transistors, et dispositifs analogues à partir d'un semi-conducteur | |
FR2387515A1 (fr) | Procede de formation d'un contact pour un circuit integre | |
FR2375720A1 (fr) | Procede de fabrication de circuits integres | |
GB1501477A (en) | Method for removing copper contaminant from semiconductor surfaces | |
FR2355092A1 (fr) | Procede de preparation de surfaces de semi-conducteurs, ayant une bonne stoechiometrie et une faible contamination | |
FR2457914A1 (fr) | Procede pour la fabrication du silicium possedant des proprietes semiconductrices | |
KR900001065B1 (ko) | 실리콘 반도체 장치의 표면 메탈증착전 처리방법 | |
IT994153B (it) | Mordenzatura di semiconduttori del gruppo iii v | |
FR2343697A1 (fr) | Procede pour la fabrication de dioxyde de silicium hautement disperse possedant une action d'epaississement renforcee | |
JPH0684731A (ja) | 半導体ウェハー | |
JPS57204146A (en) | Manufacture of semiconductor device | |
BE861311A (fr) | Procede d'attaque plasmatique, notamment pour la fabrication de semiconducteurs | |
KR910005385A (ko) | 대칭적 포물선 정션 형성 방법 | |
KR960034386A (ko) | 실리콘 웨이퍼 세정용 유체 및 이를 사용하는 실리콘 웨이퍼의 세정방법 | |
JPS6467941A (en) | Semiconductor integrated circuit device | |
KR940027096A (ko) | 반도체 소자의 폴리실리콘막 건식식각 방법 | |
KR920001648A (ko) | 반도체 소자의 폴리머 제거방법 | |
KR940008097A (ko) | 캐패시터 용량을 증대한 반도체 메모리 셀 제조방법 |