FR2445022A1 - Perfectionnement relatif au procede pour la production de dispositifs integres a semi-conducteur et produit ainsi obtenu - Google Patents
Perfectionnement relatif au procede pour la production de dispositifs integres a semi-conducteur et produit ainsi obtenuInfo
- Publication number
- FR2445022A1 FR2445022A1 FR7929840A FR7929840A FR2445022A1 FR 2445022 A1 FR2445022 A1 FR 2445022A1 FR 7929840 A FR7929840 A FR 7929840A FR 7929840 A FR7929840 A FR 7929840A FR 2445022 A1 FR2445022 A1 FR 2445022A1
- Authority
- FR
- France
- Prior art keywords
- diffused
- layer
- zones
- production
- semiconductor devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000002955 isolation Methods 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT31304/78A IT1101096B (it) | 1978-12-22 | 1978-12-22 | Perfezionamento al procedimento per produrre dispositivi integrati a semiconduttore e prodotto risultante |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2445022A1 true FR2445022A1 (fr) | 1980-07-18 |
Family
ID=11233426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7929840A Withdrawn FR2445022A1 (fr) | 1978-12-22 | 1979-12-05 | Perfectionnement relatif au procede pour la production de dispositifs integres a semi-conducteur et produit ainsi obtenu |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS55108762A (it) |
DE (1) | DE2951821A1 (it) |
FR (1) | FR2445022A1 (it) |
GB (1) | GB2039415A (it) |
IT (1) | IT1101096B (it) |
SE (1) | SE7910530L (it) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0057549A2 (en) * | 1981-01-29 | 1982-08-11 | Kabushiki Kaisha Toshiba | Semiconductor device |
EP0341461A2 (en) * | 1988-05-09 | 1989-11-15 | Motorola, Inc. | Process for making a bipolar integrated circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2309040A1 (fr) * | 1975-04-22 | 1976-11-19 | Tokyo Shibaura Electric Co | Circuit integre comportant un transistor vertical a base epitaxiale |
-
1978
- 1978-12-22 IT IT31304/78A patent/IT1101096B/it active
-
1979
- 1979-12-05 FR FR7929840A patent/FR2445022A1/fr not_active Withdrawn
- 1979-12-20 SE SE7910530A patent/SE7910530L/ not_active Application Discontinuation
- 1979-12-21 DE DE19792951821 patent/DE2951821A1/de not_active Withdrawn
- 1979-12-21 JP JP16577079A patent/JPS55108762A/ja active Pending
- 1979-12-24 GB GB7944398A patent/GB2039415A/en not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2309040A1 (fr) * | 1975-04-22 | 1976-11-19 | Tokyo Shibaura Electric Co | Circuit integre comportant un transistor vertical a base epitaxiale |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0057549A2 (en) * | 1981-01-29 | 1982-08-11 | Kabushiki Kaisha Toshiba | Semiconductor device |
EP0057549A3 (en) * | 1981-01-29 | 1983-07-27 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor body |
EP0341461A2 (en) * | 1988-05-09 | 1989-11-15 | Motorola, Inc. | Process for making a bipolar integrated circuit |
EP0341461A3 (en) * | 1988-05-09 | 1990-05-16 | Motorola, Inc. | Process for making a bipolar integrated circuit |
Also Published As
Publication number | Publication date |
---|---|
SE7910530L (sv) | 1980-06-23 |
IT1101096B (it) | 1985-09-28 |
DE2951821A1 (de) | 1980-07-03 |
IT7831304A0 (it) | 1978-12-22 |
JPS55108762A (en) | 1980-08-21 |
GB2039415A (en) | 1980-08-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RE | Withdrawal of published application |