EP0341461A3 - Process for making a bipolar integrated circuit - Google Patents

Process for making a bipolar integrated circuit Download PDF

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Publication number
EP0341461A3
EP0341461A3 EP89107083A EP89107083A EP0341461A3 EP 0341461 A3 EP0341461 A3 EP 0341461A3 EP 89107083 A EP89107083 A EP 89107083A EP 89107083 A EP89107083 A EP 89107083A EP 0341461 A3 EP0341461 A3 EP 0341461A3
Authority
EP
European Patent Office
Prior art keywords
making
integrated circuit
bipolar integrated
bipolar
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP89107083A
Other versions
EP0341461B1 (en
EP0341461A2 (en
Inventor
Bertrand F. Cambou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of EP0341461A2 publication Critical patent/EP0341461A2/en
Publication of EP0341461A3 publication Critical patent/EP0341461A3/en
Application granted granted Critical
Publication of EP0341461B1 publication Critical patent/EP0341461B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/011—Bipolar transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
EP89107083A 1988-05-09 1989-04-20 Process for making a bipolar integrated circuit Expired - Lifetime EP0341461B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US191461 1988-05-09
US07/191,461 US4902633A (en) 1988-05-09 1988-05-09 Process for making a bipolar integrated circuit

Publications (3)

Publication Number Publication Date
EP0341461A2 EP0341461A2 (en) 1989-11-15
EP0341461A3 true EP0341461A3 (en) 1990-05-16
EP0341461B1 EP0341461B1 (en) 1995-08-09

Family

ID=22705591

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89107083A Expired - Lifetime EP0341461B1 (en) 1988-05-09 1989-04-20 Process for making a bipolar integrated circuit

Country Status (4)

Country Link
US (1) US4902633A (en)
EP (1) EP0341461B1 (en)
JP (1) JP2700487B2 (en)
DE (1) DE68923730T2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06101540B2 (en) * 1989-05-19 1994-12-12 三洋電機株式会社 Method for manufacturing semiconductor integrated circuit
US5139961A (en) * 1990-04-02 1992-08-18 National Semiconductor Corporation Reducing base resistance of a bjt by forming a self aligned silicide in the single crystal region of the extrinsic base
US5200347A (en) * 1991-02-14 1993-04-06 Linear Technology Corporation Method for improving the radiation hardness of an integrated circuit bipolar transistor
US6043555A (en) * 1995-04-13 2000-03-28 Telefonaktiebolget Lm Ericsson Bipolar silicon-on-insulator transistor with increased breakdown voltage
SE515867C2 (en) * 1995-04-13 2001-10-22 Ericsson Telefon Ab L M Bipolar SOI transistor
US5702959A (en) * 1995-05-31 1997-12-30 Texas Instruments Incorporated Method for making an isolated vertical transistor
TW200733244A (en) * 2005-10-06 2007-09-01 Nxp Bv Semiconductor device
JP2007158188A (en) * 2005-12-07 2007-06-21 Sanyo Electric Co Ltd Semiconductor device, and method of manufacturing same
JP2007165370A (en) * 2005-12-09 2007-06-28 Sanyo Electric Co Ltd Semiconductor device, and method of manufacturing same
JP5261640B2 (en) * 2005-12-09 2013-08-14 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Manufacturing method of semiconductor device
FR2978614B1 (en) * 2011-07-25 2014-09-05 Altis Semiconductor Snc SEMICONDUCTOR SUBSTRATE COMPRISING DOPED AREAS FORMING A P-N JUNCTION
CN102664161B (en) 2012-05-25 2016-11-16 杭州士兰集成电路有限公司 The isolation structure of High voltage BCD process mesohigh device and manufacture method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982974A (en) * 1971-11-22 1976-09-28 International Business Machines Corporation Compensation of autodoping in the manufacture of integrated circuits
USRE30282E (en) * 1976-06-28 1980-05-27 Motorola, Inc. Double master mask process for integrated circuit manufacture
FR2445022A1 (en) * 1978-12-22 1980-07-18 Ates Componenti Elettron IMPROVEMENT RELATING TO THE PROCESS FOR THE PRODUCTION OF INTEGRATED SEMICONDUCTOR DEVICES AND THE PRODUCT THUS OBTAINED
DE3136364A1 (en) * 1980-12-05 1982-11-18 VEB Halbleiterwerk Frankfurt/Oder Leitbetrieb im VEB Kombinat Mikroelektronik, DDR 1200 Frankfurt Method for manufacturing integrated circuits

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US30282A (en) * 1860-10-09 Quartz crusher and amalgamator
US3473977A (en) * 1967-02-02 1969-10-21 Westinghouse Electric Corp Semiconductor fabrication technique permitting examination of epitaxially grown layers
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
FR2041710B1 (en) * 1969-05-08 1974-06-14 Radiotechnique Compelec
DE2031831A1 (en) * 1969-06-27 1972-03-02 Hitachi Ltd Semiconductor diode and process for its manufacture
US3622842A (en) * 1969-12-29 1971-11-23 Ibm Semiconductor device having high-switching speed and method of making
JPS5942463B2 (en) * 1972-09-22 1984-10-15 ソニー株式会社 Semiconductor integrated circuit device
US4111720A (en) * 1977-03-31 1978-09-05 International Business Machines Corporation Method for forming a non-epitaxial bipolar integrated circuit
JPS58210659A (en) * 1982-06-01 1983-12-07 Nec Corp Semiconductor device and manufacture thereof
US4593457A (en) * 1984-12-17 1986-06-10 Motorola, Inc. Method for making gallium arsenide NPN transistor with self-aligned base enhancement to emitter region and metal contact
US4717681A (en) * 1986-05-19 1988-01-05 Texas Instruments Incorporated Method of making a heterojunction bipolar transistor with SIPOS
JPS6318673A (en) * 1986-07-11 1988-01-26 Yamaha Corp Manufacture of semiconductor device
IT1215024B (en) * 1986-10-01 1990-01-31 Sgs Microelettronica Spa PROCESS FOR THE FORMATION OF A HIGH VOLTAGE SEMICONDUCTOR MONOLITHIC DEVICE

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982974A (en) * 1971-11-22 1976-09-28 International Business Machines Corporation Compensation of autodoping in the manufacture of integrated circuits
USRE30282E (en) * 1976-06-28 1980-05-27 Motorola, Inc. Double master mask process for integrated circuit manufacture
FR2445022A1 (en) * 1978-12-22 1980-07-18 Ates Componenti Elettron IMPROVEMENT RELATING TO THE PROCESS FOR THE PRODUCTION OF INTEGRATED SEMICONDUCTOR DEVICES AND THE PRODUCT THUS OBTAINED
DE3136364A1 (en) * 1980-12-05 1982-11-18 VEB Halbleiterwerk Frankfurt/Oder Leitbetrieb im VEB Kombinat Mikroelektronik, DDR 1200 Frankfurt Method for manufacturing integrated circuits

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
FROM ELECTRONICS TO MICROELECTRONICS; FOURTH EUROPEAN CONFERENCE ON ELECTRONICS - EUROCON '80, 1980, pages 745-749; M. DEPEY: "Compatibility of high voltage analog functions and I2L digital functions" *

Also Published As

Publication number Publication date
DE68923730T2 (en) 1996-04-04
EP0341461B1 (en) 1995-08-09
US4902633A (en) 1990-02-20
DE68923730D1 (en) 1995-09-14
JPH0217646A (en) 1990-01-22
EP0341461A2 (en) 1989-11-15
JP2700487B2 (en) 1998-01-21

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