FR2435131A1 - Diode capacitive - Google Patents

Diode capacitive

Info

Publication number
FR2435131A1
FR2435131A1 FR7919305A FR7919305A FR2435131A1 FR 2435131 A1 FR2435131 A1 FR 2435131A1 FR 7919305 A FR7919305 A FR 7919305A FR 7919305 A FR7919305 A FR 7919305A FR 2435131 A1 FR2435131 A1 FR 2435131A1
Authority
FR
France
Prior art keywords
conduction
junction
type
epitaxial layer
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7919305A
Other languages
English (en)
French (fr)
Other versions
FR2435131B1 (https=
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2435131A1 publication Critical patent/FR2435131A1/fr
Application granted granted Critical
Publication of FR2435131B1 publication Critical patent/FR2435131B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7919305A 1978-07-29 1979-07-26 Diode capacitive Granted FR2435131A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2833319A DE2833319C2 (de) 1978-07-29 1978-07-29 Kapazitätsdiode

Publications (2)

Publication Number Publication Date
FR2435131A1 true FR2435131A1 (fr) 1980-03-28
FR2435131B1 FR2435131B1 (https=) 1984-06-08

Family

ID=6045692

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7919305A Granted FR2435131A1 (fr) 1978-07-29 1979-07-26 Diode capacitive

Country Status (8)

Country Link
US (1) US4475117A (https=)
JP (1) JPS5522894A (https=)
CA (1) CA1130469A (https=)
DE (1) DE2833319C2 (https=)
FR (1) FR2435131A1 (https=)
GB (1) GB2026771B (https=)
IT (1) IT1123479B (https=)
NL (1) NL184446C (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6459874A (en) * 1987-08-31 1989-03-07 Toko Inc Manufacture of variable-capacitance diode
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
JP2525753B2 (ja) * 1991-11-13 1996-08-21 東光株式会社 半導体接合容量素子
CN1165586A (zh) * 1995-09-18 1997-11-19 菲利浦电子有限公司 变容二极管和制造变容二极管的方法
US9224703B2 (en) 2013-09-24 2015-12-29 Semiconductor Components Industries, Llc Electronic device including a diode and a process of forming the same
RU2614663C1 (ru) * 2015-12-29 2017-03-28 Общество с ограниченной ответственностью "Лаборатория Микроприборов" Варикап и способ его изготовления

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1154049A (en) * 1965-12-30 1969-06-04 Siemens Ag Improvements in or relating to Avalanche Diodes.
FR2026335A1 (https=) * 1968-12-17 1970-09-18 Siemens Ag
FR2098362A1 (https=) * 1970-07-13 1972-03-10 Siemens Ag
GB1277501A (en) * 1963-01-23 1972-06-14 Gen Electric Variable capacitance diode fabrication
NL7217867A (https=) * 1971-12-29 1973-07-03
FR2330143A1 (fr) * 1975-10-28 1977-05-27 Sony Corp Procede d'implantation ionique pour la fabrication de semi-conducteurs

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA797439A (en) * 1968-10-22 Fujitsu Limited Variable capacity diode
US3878001A (en) * 1970-07-13 1975-04-15 Siemens Ag Method of making a hypersensitive semiconductor tuning diode

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1277501A (en) * 1963-01-23 1972-06-14 Gen Electric Variable capacitance diode fabrication
GB1154049A (en) * 1965-12-30 1969-06-04 Siemens Ag Improvements in or relating to Avalanche Diodes.
FR2026335A1 (https=) * 1968-12-17 1970-09-18 Siemens Ag
FR2098362A1 (https=) * 1970-07-13 1972-03-10 Siemens Ag
NL7217867A (https=) * 1971-12-29 1973-07-03
FR2330143A1 (fr) * 1975-10-28 1977-05-27 Sony Corp Procede d'implantation ionique pour la fabrication de semi-conducteurs

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/68 *

Also Published As

Publication number Publication date
GB2026771B (en) 1983-01-06
DE2833319C2 (de) 1982-10-07
US4475117A (en) 1984-10-02
NL7905701A (nl) 1980-01-31
CA1130469A (en) 1982-08-24
NL184446C (nl) 1989-07-17
GB2026771A (en) 1980-02-06
IT7924706A0 (it) 1979-07-26
DE2833319A1 (de) 1980-02-07
FR2435131B1 (https=) 1984-06-08
IT1123479B (it) 1986-04-30
JPS5522894A (en) 1980-02-18

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Legal Events

Date Code Title Description
ST Notification of lapse