CA1130469A - Capacitance diode - Google Patents
Capacitance diodeInfo
- Publication number
- CA1130469A CA1130469A CA332,579A CA332579A CA1130469A CA 1130469 A CA1130469 A CA 1130469A CA 332579 A CA332579 A CA 332579A CA 1130469 A CA1130469 A CA 1130469A
- Authority
- CA
- Canada
- Prior art keywords
- zone
- junction
- capacitance diode
- conductivity type
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003534 oscillatory effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- OFPXSFXSNFPTHF-UHFFFAOYSA-N oxaprozin Chemical compound O1C(CCC(=O)O)=NC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 OFPXSFXSNFPTHF-UHFFFAOYSA-N 0.000 description 1
- 229960002739 oxaprozin Drugs 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002311 subsequent effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2833319A DE2833319C2 (de) | 1978-07-29 | 1978-07-29 | Kapazitätsdiode |
| DEP2833319.9 | 1978-07-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1130469A true CA1130469A (en) | 1982-08-24 |
Family
ID=6045692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA332,579A Expired CA1130469A (en) | 1978-07-29 | 1979-07-26 | Capacitance diode |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4475117A (https=) |
| JP (1) | JPS5522894A (https=) |
| CA (1) | CA1130469A (https=) |
| DE (1) | DE2833319C2 (https=) |
| FR (1) | FR2435131A1 (https=) |
| GB (1) | GB2026771B (https=) |
| IT (1) | IT1123479B (https=) |
| NL (1) | NL184446C (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6459874A (en) * | 1987-08-31 | 1989-03-07 | Toko Inc | Manufacture of variable-capacitance diode |
| US5017950A (en) * | 1989-01-19 | 1991-05-21 | Toko, Inc. | Variable-capacitance diode element having wide capacitance variation range |
| JP2525753B2 (ja) * | 1991-11-13 | 1996-08-21 | 東光株式会社 | 半導体接合容量素子 |
| CN1165586A (zh) * | 1995-09-18 | 1997-11-19 | 菲利浦电子有限公司 | 变容二极管和制造变容二极管的方法 |
| US9224703B2 (en) | 2013-09-24 | 2015-12-29 | Semiconductor Components Industries, Llc | Electronic device including a diode and a process of forming the same |
| RU2614663C1 (ru) * | 2015-12-29 | 2017-03-28 | Общество с ограниченной ответственностью "Лаборатория Микроприборов" | Варикап и способ его изготовления |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA797439A (en) * | 1968-10-22 | Fujitsu Limited | Variable capacity diode | |
| DE1229093B (de) * | 1963-01-23 | 1966-11-24 | Basf Ag | Verfahren zur Herstellung von Hexahydropyrimidinderivaten |
| DE1514655A1 (de) * | 1965-12-30 | 1969-08-28 | Siemens Ag | Lawinendiode zur Schwingungserzeugung unter quasistationaeren Bedingungen unterhalb der Grenzfrequenz fuer den Laufzeitfall |
| NL6915021A (https=) * | 1968-12-17 | 1970-06-19 | ||
| US3878001A (en) * | 1970-07-13 | 1975-04-15 | Siemens Ag | Method of making a hypersensitive semiconductor tuning diode |
| DE2034717C2 (de) * | 1970-07-13 | 1983-11-03 | Siemens AG, 1000 Berlin und 8000 München | Abstimmbare Kapazitätsdiode |
| JPS5316670B2 (https=) * | 1971-12-29 | 1978-06-02 | ||
| JPS5834931B2 (ja) * | 1975-10-28 | 1983-07-29 | ソニー株式会社 | ハンドウタイヘノフジユンブツドウニユウホウ |
-
1978
- 1978-07-29 DE DE2833319A patent/DE2833319C2/de not_active Expired
-
1979
- 1979-07-24 NL NLAANVRAGE7905701,A patent/NL184446C/xx not_active IP Right Cessation
- 1979-07-26 IT IT24706/79A patent/IT1123479B/it active
- 1979-07-26 GB GB7926115A patent/GB2026771B/en not_active Expired
- 1979-07-26 CA CA332,579A patent/CA1130469A/en not_active Expired
- 1979-07-26 FR FR7919305A patent/FR2435131A1/fr active Granted
- 1979-07-27 JP JP9663879A patent/JPS5522894A/ja active Pending
-
1981
- 1981-02-13 US US06/234,089 patent/US4475117A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2026771B (en) | 1983-01-06 |
| DE2833319C2 (de) | 1982-10-07 |
| US4475117A (en) | 1984-10-02 |
| NL7905701A (nl) | 1980-01-31 |
| NL184446C (nl) | 1989-07-17 |
| GB2026771A (en) | 1980-02-06 |
| IT7924706A0 (it) | 1979-07-26 |
| DE2833319A1 (de) | 1980-02-07 |
| FR2435131A1 (fr) | 1980-03-28 |
| FR2435131B1 (https=) | 1984-06-08 |
| IT1123479B (it) | 1986-04-30 |
| JPS5522894A (en) | 1980-02-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |