FR2430064B1 - Memoire non volatile, effacable electriquement par mots - Google Patents

Memoire non volatile, effacable electriquement par mots

Info

Publication number
FR2430064B1
FR2430064B1 FR7916728A FR7916728A FR2430064B1 FR 2430064 B1 FR2430064 B1 FR 2430064B1 FR 7916728 A FR7916728 A FR 7916728A FR 7916728 A FR7916728 A FR 7916728A FR 2430064 B1 FR2430064 B1 FR 2430064B1
Authority
FR
France
Prior art keywords
word
volatile memory
electrically erasable
erasable
electrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7916728A
Other languages
English (en)
French (fr)
Other versions
FR2430064A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2430064A1 publication Critical patent/FR2430064A1/fr
Application granted granted Critical
Publication of FR2430064B1 publication Critical patent/FR2430064B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
FR7916728A 1978-06-30 1979-06-28 Memoire non volatile, effacable electriquement par mots Expired FR2430064B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782828836 DE2828836C2 (de) 1978-06-30 1978-06-30 Wortweise elektrisch löschbarer, nichtflüchtiger Speicher

Publications (2)

Publication Number Publication Date
FR2430064A1 FR2430064A1 (fr) 1980-01-25
FR2430064B1 true FR2430064B1 (fr) 1985-10-18

Family

ID=6043234

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7916728A Expired FR2430064B1 (fr) 1978-06-30 1979-06-28 Memoire non volatile, effacable electriquement par mots

Country Status (4)

Country Link
JP (1) JPS558697A (enrdf_load_stackoverflow)
DE (1) DE2828836C2 (enrdf_load_stackoverflow)
FR (1) FR2430064B1 (enrdf_load_stackoverflow)
GB (1) GB2029145B (enrdf_load_stackoverflow)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1224062B (it) * 1979-09-28 1990-09-26 Ates Componenti Elettron Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile
US4797856A (en) * 1987-04-16 1989-01-10 Intel Corporation Self-limiting erase scheme for EEPROM
US4875188A (en) * 1988-01-12 1989-10-17 Intel Corporation Voltage margining circuit for flash eprom
KR900019027A (ko) * 1988-05-23 1990-12-22 미다 가쓰시게 불휘발성 반도체 기억장치
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US4888738A (en) * 1988-06-29 1989-12-19 Seeq Technology Current-regulated, voltage-regulated erase circuit for EEPROM memory
JP2654596B2 (ja) * 1989-02-06 1997-09-17 株式会社日立製作所 不揮発性記憶装置
US5844842A (en) 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
DE69033438T2 (de) 1989-04-13 2000-07-06 Sandisk Corp., Santa Clara Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
FR2647941B1 (fr) * 1989-06-06 1991-08-30 Gemplus Card Int Procede d'effacement de points memoire, dispositif destine a sa mise en oeuvre, et son utilisation dans un dispositif a memoire non alimente
EP0403822B1 (en) * 1989-06-19 1994-10-12 Texas Instruments Incorporated Circuit and method for conditioning erased eeproms prior to programming
JP3448051B2 (ja) * 1990-03-31 2003-09-16 株式会社東芝 不揮発性半導体記憶装置
JP2709751B2 (ja) * 1990-06-15 1998-02-04 三菱電機株式会社 不揮発性半導体記憶装置およびそのデータ消去方法
US5361227A (en) 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US6781895B1 (en) 1991-12-19 2004-08-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP3512833B2 (ja) * 1993-09-17 2004-03-31 株式会社東芝 不揮発性半導体記憶装置
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
JP3202498B2 (ja) * 1994-03-15 2001-08-27 株式会社東芝 半導体記憶装置
JP2987105B2 (ja) * 1996-06-10 1999-12-06 ハライ エリヤホウ フラッシュＥＥｐｒｏｍメモリシステムとその使用方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2643987C2 (de) * 1974-09-20 1984-03-29 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
JPS5193638A (enrdf_load_stackoverflow) * 1975-02-14 1976-08-17
JPS5823677B2 (ja) * 1976-05-18 1983-05-17 三菱電機株式会社 記憶消去装置
JPS5330838A (en) * 1976-09-03 1978-03-23 Fujitsu Ltd Erasing method of erasable rom

Also Published As

Publication number Publication date
JPS558697A (en) 1980-01-22
GB2029145B (en) 1982-06-16
GB2029145A (en) 1980-03-12
DE2828836C2 (de) 1983-01-05
FR2430064A1 (fr) 1980-01-25
JPH0146949B2 (enrdf_load_stackoverflow) 1989-10-11
DE2828836A1 (de) 1980-01-03

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Legal Events

Date Code Title Description
ST Notification of lapse