JPH0146949B2 - - Google Patents

Info

Publication number
JPH0146949B2
JPH0146949B2 JP54082542A JP8254279A JPH0146949B2 JP H0146949 B2 JPH0146949 B2 JP H0146949B2 JP 54082542 A JP54082542 A JP 54082542A JP 8254279 A JP8254279 A JP 8254279A JP H0146949 B2 JPH0146949 B2 JP H0146949B2
Authority
JP
Japan
Prior art keywords
voltage
memory cell
erase
memory
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54082542A
Other languages
English (en)
Japanese (ja)
Other versions
JPS558697A (en
Inventor
Shurenku Harutomuuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS558697A publication Critical patent/JPS558697A/ja
Publication of JPH0146949B2 publication Critical patent/JPH0146949B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits

Landscapes

  • Read Only Memory (AREA)
JP8254279A 1978-06-30 1979-06-29 Nonnvolatile memory erasable electrically in word unit Granted JPS558697A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782828836 DE2828836C2 (de) 1978-06-30 1978-06-30 Wortweise elektrisch löschbarer, nichtflüchtiger Speicher

Publications (2)

Publication Number Publication Date
JPS558697A JPS558697A (en) 1980-01-22
JPH0146949B2 true JPH0146949B2 (enrdf_load_stackoverflow) 1989-10-11

Family

ID=6043234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8254279A Granted JPS558697A (en) 1978-06-30 1979-06-29 Nonnvolatile memory erasable electrically in word unit

Country Status (4)

Country Link
JP (1) JPS558697A (enrdf_load_stackoverflow)
DE (1) DE2828836C2 (enrdf_load_stackoverflow)
FR (1) FR2430064B1 (enrdf_load_stackoverflow)
GB (1) GB2029145B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7266017B2 (en) 1989-04-13 2007-09-04 Sandisk Corporation Method for selective erasing and parallel programming/verifying of cell blocks in a flash EEprom system
USRE41019E1 (en) 1993-09-21 2009-12-01 Kabushiki Kaisha Toshiba Multi-state EEPROM having write-verify control circuit

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1224062B (it) * 1979-09-28 1990-09-26 Ates Componenti Elettron Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile
US4797856A (en) * 1987-04-16 1989-01-10 Intel Corporation Self-limiting erase scheme for EEPROM
US4875188A (en) * 1988-01-12 1989-10-17 Intel Corporation Voltage margining circuit for flash eprom
KR900019027A (ko) * 1988-05-23 1990-12-22 미다 가쓰시게 불휘발성 반도체 기억장치
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US4888738A (en) * 1988-06-29 1989-12-19 Seeq Technology Current-regulated, voltage-regulated erase circuit for EEPROM memory
JP2654596B2 (ja) * 1989-02-06 1997-09-17 株式会社日立製作所 不揮発性記憶装置
US5844842A (en) 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
FR2647941B1 (fr) * 1989-06-06 1991-08-30 Gemplus Card Int Procede d'effacement de points memoire, dispositif destine a sa mise en oeuvre, et son utilisation dans un dispositif a memoire non alimente
EP0403822B1 (en) * 1989-06-19 1994-10-12 Texas Instruments Incorporated Circuit and method for conditioning erased eeproms prior to programming
JP3448051B2 (ja) * 1990-03-31 2003-09-16 株式会社東芝 不揮発性半導体記憶装置
JP2709751B2 (ja) * 1990-06-15 1998-02-04 三菱電機株式会社 不揮発性半導体記憶装置およびそのデータ消去方法
US5361227A (en) 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US6781895B1 (en) 1991-12-19 2004-08-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP3512833B2 (ja) * 1993-09-17 2004-03-31 株式会社東芝 不揮発性半導体記憶装置
JP3202498B2 (ja) * 1994-03-15 2001-08-27 株式会社東芝 半導体記憶装置
JP2987105B2 (ja) * 1996-06-10 1999-12-06 ハライ エリヤホウ フラッシュＥＥｐｒｏｍメモリシステムとその使用方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2643987C2 (de) * 1974-09-20 1984-03-29 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
JPS5193638A (enrdf_load_stackoverflow) * 1975-02-14 1976-08-17
JPS5823677B2 (ja) * 1976-05-18 1983-05-17 三菱電機株式会社 記憶消去装置
JPS5330838A (en) * 1976-09-03 1978-03-23 Fujitsu Ltd Erasing method of erasable rom

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7266017B2 (en) 1989-04-13 2007-09-04 Sandisk Corporation Method for selective erasing and parallel programming/verifying of cell blocks in a flash EEprom system
US7283397B2 (en) 1989-04-13 2007-10-16 Sandisk Corporation Flash EEprom system capable of selective erasing and parallel programming/verifying memory cell blocks
USRE41019E1 (en) 1993-09-21 2009-12-01 Kabushiki Kaisha Toshiba Multi-state EEPROM having write-verify control circuit
USRE41020E1 (en) 1993-09-21 2009-12-01 Kabushiki Kaisha Toshiba Multi-state EEPROM having write-verify control circuit
USRE41021E1 (en) 1993-09-21 2009-12-01 Kabushiki Kaisha Toshiba Multi-state EEPROM having write-verify control circuit
USRE41244E1 (en) 1993-09-21 2010-04-20 Kabushiki Kaisha Toshiba Multi-state EEPROM having write-verify control circuit
USRE41456E1 (en) 1993-09-21 2010-07-27 Kabushiki Kaisha Toshiba Multi-state EEPROM having write-verify control circuit
USRE41468E1 (en) 1993-09-21 2010-08-03 Kabushiki Kaisha Toshiba Multi-state EEPROM having write-verify control circuit
USRE41485E1 (en) 1993-09-21 2010-08-10 Kabushiki Kaisha Toshiba Multi-state EEPROM having write-verify control circuit
USRE41950E1 (en) 1993-09-21 2010-11-23 Kabushiki Kaisha Toshiba Multi-state EEPROM having write-verify control circuit
USRE41969E1 (en) 1993-09-21 2010-11-30 Kabushiki Kaisha Toshiba Multi-state EEPROM having write-verify control circuit
USRE42120E1 (en) 1993-09-21 2011-02-08 Kabushiki Kaisha Toshiba Multi-state EEPROM having write-verify control circuit

Also Published As

Publication number Publication date
JPS558697A (en) 1980-01-22
GB2029145B (en) 1982-06-16
GB2029145A (en) 1980-03-12
DE2828836C2 (de) 1983-01-05
FR2430064A1 (fr) 1980-01-25
FR2430064B1 (fr) 1985-10-18
DE2828836A1 (de) 1980-01-03

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