DE2828836C2 - Wortweise elektrisch löschbarer, nichtflüchtiger Speicher - Google Patents

Wortweise elektrisch löschbarer, nichtflüchtiger Speicher

Info

Publication number
DE2828836C2
DE2828836C2 DE19782828836 DE2828836A DE2828836C2 DE 2828836 C2 DE2828836 C2 DE 2828836C2 DE 19782828836 DE19782828836 DE 19782828836 DE 2828836 A DE2828836 A DE 2828836A DE 2828836 C2 DE2828836 C2 DE 2828836C2
Authority
DE
Germany
Prior art keywords
memory
erase
voltage
memory cell
word
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19782828836
Other languages
German (de)
English (en)
Other versions
DE2828836A1 (de
Inventor
Hartmut Dipl.-Phys. Dr.rer.nat. 8013 Haar Schrenk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19782828836 priority Critical patent/DE2828836C2/de
Priority to FR7916728A priority patent/FR2430064B1/fr
Priority to GB7922592A priority patent/GB2029145B/en
Priority to JP8254279A priority patent/JPS558697A/ja
Publication of DE2828836A1 publication Critical patent/DE2828836A1/de
Application granted granted Critical
Publication of DE2828836C2 publication Critical patent/DE2828836C2/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits

Landscapes

  • Read Only Memory (AREA)
DE19782828836 1978-06-30 1978-06-30 Wortweise elektrisch löschbarer, nichtflüchtiger Speicher Expired DE2828836C2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19782828836 DE2828836C2 (de) 1978-06-30 1978-06-30 Wortweise elektrisch löschbarer, nichtflüchtiger Speicher
FR7916728A FR2430064B1 (fr) 1978-06-30 1979-06-28 Memoire non volatile, effacable electriquement par mots
GB7922592A GB2029145B (en) 1978-06-30 1979-06-28 Non-volatile word-wise electrically erasable stores
JP8254279A JPS558697A (en) 1978-06-30 1979-06-29 Nonnvolatile memory erasable electrically in word unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782828836 DE2828836C2 (de) 1978-06-30 1978-06-30 Wortweise elektrisch löschbarer, nichtflüchtiger Speicher

Publications (2)

Publication Number Publication Date
DE2828836A1 DE2828836A1 (de) 1980-01-03
DE2828836C2 true DE2828836C2 (de) 1983-01-05

Family

ID=6043234

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782828836 Expired DE2828836C2 (de) 1978-06-30 1978-06-30 Wortweise elektrisch löschbarer, nichtflüchtiger Speicher

Country Status (4)

Country Link
JP (1) JPS558697A (enrdf_load_stackoverflow)
DE (1) DE2828836C2 (enrdf_load_stackoverflow)
FR (1) FR2430064B1 (enrdf_load_stackoverflow)
GB (1) GB2029145B (enrdf_load_stackoverflow)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1224062B (it) * 1979-09-28 1990-09-26 Ates Componenti Elettron Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile
US4797856A (en) * 1987-04-16 1989-01-10 Intel Corporation Self-limiting erase scheme for EEPROM
US4875188A (en) * 1988-01-12 1989-10-17 Intel Corporation Voltage margining circuit for flash eprom
KR900019027A (ko) * 1988-05-23 1990-12-22 미다 가쓰시게 불휘발성 반도체 기억장치
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US4888738A (en) * 1988-06-29 1989-12-19 Seeq Technology Current-regulated, voltage-regulated erase circuit for EEPROM memory
JP2654596B2 (ja) * 1989-02-06 1997-09-17 株式会社日立製作所 不揮発性記憶装置
US5844842A (en) 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
DE69033438T2 (de) 1989-04-13 2000-07-06 Sandisk Corp., Santa Clara Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
FR2647941B1 (fr) * 1989-06-06 1991-08-30 Gemplus Card Int Procede d'effacement de points memoire, dispositif destine a sa mise en oeuvre, et son utilisation dans un dispositif a memoire non alimente
EP0403822B1 (en) * 1989-06-19 1994-10-12 Texas Instruments Incorporated Circuit and method for conditioning erased eeproms prior to programming
JP3448051B2 (ja) * 1990-03-31 2003-09-16 株式会社東芝 不揮発性半導体記憶装置
JP2709751B2 (ja) * 1990-06-15 1998-02-04 三菱電機株式会社 不揮発性半導体記憶装置およびそのデータ消去方法
US5361227A (en) 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US6781895B1 (en) 1991-12-19 2004-08-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP3512833B2 (ja) * 1993-09-17 2004-03-31 株式会社東芝 不揮発性半導体記憶装置
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
JP3202498B2 (ja) * 1994-03-15 2001-08-27 株式会社東芝 半導体記憶装置
JP2987105B2 (ja) * 1996-06-10 1999-12-06 ハライ エリヤホウ フラッシュＥＥｐｒｏｍメモリシステムとその使用方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2643987C2 (de) * 1974-09-20 1984-03-29 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
JPS5193638A (enrdf_load_stackoverflow) * 1975-02-14 1976-08-17
JPS5823677B2 (ja) * 1976-05-18 1983-05-17 三菱電機株式会社 記憶消去装置
JPS5330838A (en) * 1976-09-03 1978-03-23 Fujitsu Ltd Erasing method of erasable rom

Also Published As

Publication number Publication date
JPS558697A (en) 1980-01-22
GB2029145B (en) 1982-06-16
GB2029145A (en) 1980-03-12
FR2430064A1 (fr) 1980-01-25
JPH0146949B2 (enrdf_load_stackoverflow) 1989-10-11
FR2430064B1 (fr) 1985-10-18
DE2828836A1 (de) 1980-01-03

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition