FR2423865A1 - Procede pour l'application d'une couche epitaxiale sur un substrat a partir d'une phase gazeuse - Google Patents

Procede pour l'application d'une couche epitaxiale sur un substrat a partir d'une phase gazeuse

Info

Publication number
FR2423865A1
FR2423865A1 FR7910090A FR7910090A FR2423865A1 FR 2423865 A1 FR2423865 A1 FR 2423865A1 FR 7910090 A FR7910090 A FR 7910090A FR 7910090 A FR7910090 A FR 7910090A FR 2423865 A1 FR2423865 A1 FR 2423865A1
Authority
FR
France
Prior art keywords
substrate
face
application
heating medium
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7910090A
Other languages
English (en)
French (fr)
Other versions
FR2423865B1 (US20050075337A1-20050407-C00081.png
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2423865A1 publication Critical patent/FR2423865A1/fr
Application granted granted Critical
Publication of FR2423865B1 publication Critical patent/FR2423865B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
FR7910090A 1978-04-21 1979-04-20 Procede pour l'application d'une couche epitaxiale sur un substrat a partir d'une phase gazeuse Granted FR2423865A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7804268,A NL187414C (nl) 1978-04-21 1978-04-21 Werkwijze voor het aanbrengen van een epitaxiale laag.

Publications (2)

Publication Number Publication Date
FR2423865A1 true FR2423865A1 (fr) 1979-11-16
FR2423865B1 FR2423865B1 (US20050075337A1-20050407-C00081.png) 1984-07-27

Family

ID=19830695

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7910090A Granted FR2423865A1 (fr) 1978-04-21 1979-04-20 Procede pour l'application d'une couche epitaxiale sur un substrat a partir d'une phase gazeuse

Country Status (8)

Country Link
JP (1) JPS54141560A (US20050075337A1-20050407-C00081.png)
AU (1) AU523988B2 (US20050075337A1-20050407-C00081.png)
CA (1) CA1134059A (US20050075337A1-20050407-C00081.png)
DE (1) DE2915883C2 (US20050075337A1-20050407-C00081.png)
FR (1) FR2423865A1 (US20050075337A1-20050407-C00081.png)
GB (1) GB2019644B (US20050075337A1-20050407-C00081.png)
IT (1) IT1112317B (US20050075337A1-20050407-C00081.png)
NL (1) NL187414C (US20050075337A1-20050407-C00081.png)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0671770B1 (en) * 1993-02-09 2000-08-02 GENERAL SEMICONDUCTOR, Inc. Multilayer epitaxy for a silicon diode
JP6477210B2 (ja) * 2015-04-30 2019-03-06 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP6358472B2 (ja) * 2015-06-08 2018-07-18 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP6447960B2 (ja) * 2016-04-01 2019-01-09 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2547692A1 (de) * 1975-10-24 1977-05-05 Siemens Ag Verfahren zum herstellen einer halbleitervorrichtung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL288409A (US20050075337A1-20050407-C00081.png) * 1962-02-02

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2547692A1 (de) * 1975-10-24 1977-05-05 Siemens Ag Verfahren zum herstellen einer halbleitervorrichtung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY: SOLID-STATE SCIENCE AND TECHNOLOGY, vol. 122, no. 12, décembre 1975, pages 1705-1709, Princeton (USA); *

Also Published As

Publication number Publication date
JPS5538819B2 (US20050075337A1-20050407-C00081.png) 1980-10-07
AU523988B2 (en) 1982-08-26
IT7921949A0 (it) 1979-04-18
DE2915883C2 (de) 1987-01-22
DE2915883A1 (de) 1979-10-31
NL187414C (nl) 1991-09-16
JPS54141560A (en) 1979-11-02
AU4604679A (en) 1979-10-25
GB2019644A (en) 1979-10-31
IT1112317B (it) 1986-01-13
GB2019644B (en) 1982-09-29
NL187414B (nl) 1991-04-16
CA1134059A (en) 1982-10-19
FR2423865B1 (US20050075337A1-20050407-C00081.png) 1984-07-27
NL7804268A (nl) 1979-10-23

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Legal Events

Date Code Title Description
ST Notification of lapse