FR2392499A1 - Dispositif semi-conducteur en logique integree a injection - Google Patents

Dispositif semi-conducteur en logique integree a injection

Info

Publication number
FR2392499A1
FR2392499A1 FR7815050A FR7815050A FR2392499A1 FR 2392499 A1 FR2392499 A1 FR 2392499A1 FR 7815050 A FR7815050 A FR 7815050A FR 7815050 A FR7815050 A FR 7815050A FR 2392499 A1 FR2392499 A1 FR 2392499A1
Authority
FR
France
Prior art keywords
zone
semiconductor device
integrated logic
metallizations
logic injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7815050A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2392499A1 publication Critical patent/FR2392499A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Logic Circuits (AREA)

Abstract

L'invention concerne les circuits logiques. Un dispositif en logique intégrée à injection comporte un transistor de sortie dont la région de collecteur comprend une première zone 22, 23, 24, et une seconde zone 25 à 30. La première zone forme un contact à barrière Schottky avec les métallisations 34, 35, 36, tandis que la seconde zone forme avec ces métallisations un contact ohmique à faible résistance. Application à la fabrication des circuits intégrés.
FR7815050A 1977-05-25 1978-05-22 Dispositif semi-conducteur en logique integree a injection Withdrawn FR2392499A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/800,282 US4156246A (en) 1977-05-25 1977-05-25 Combined ohmic and Schottky output transistors for logic circuit

Publications (1)

Publication Number Publication Date
FR2392499A1 true FR2392499A1 (fr) 1978-12-22

Family

ID=25177976

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7815050A Withdrawn FR2392499A1 (fr) 1977-05-25 1978-05-22 Dispositif semi-conducteur en logique integree a injection

Country Status (5)

Country Link
US (1) US4156246A (fr)
JP (1) JPS53145585A (fr)
DE (1) DE2822403A1 (fr)
FR (1) FR2392499A1 (fr)
NL (1) NL7805471A (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4282538A (en) * 1977-11-11 1981-08-04 Rca Corporation Method of integrating semiconductor components
DE2835930C2 (de) * 1978-08-17 1986-07-17 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte Halbleiterschaltungsanordnung mit mindestens einem Lateraltransistor
US4357178A (en) * 1978-12-20 1982-11-02 Ibm Corporation Schottky barrier diode with controlled characteristics and fabrication method
US4373166A (en) * 1978-12-20 1983-02-08 Ibm Corporation Schottky Barrier diode with controlled characteristics
US4214315A (en) * 1979-03-16 1980-07-22 International Business Machines Corporation Method for fabricating vertical NPN and PNP structures and the resulting product
GB2050694B (en) * 1979-05-07 1983-09-28 Nippon Telegraph & Telephone Electrode structure for a semiconductor device
JPS5669844A (en) * 1979-11-10 1981-06-11 Toshiba Corp Manufacture of semiconductor device
EP0029986B1 (fr) * 1979-11-29 1986-03-12 Vlsi Technology Research Association Procédé de fabrication d'un dispositif semiconducteur comportant une jonction Schottky
US4281448A (en) * 1980-04-14 1981-08-04 Gte Laboratories Incorporated Method of fabricating a diode bridge rectifier in monolithic integrated circuit structure utilizing isolation diffusions and metal semiconductor rectifying barrier diode formation
JPH0693512B2 (ja) * 1986-06-17 1994-11-16 日産自動車株式会社 縦形ｍｏｓｆｅｔ
US4871686A (en) * 1988-03-28 1989-10-03 Motorola, Inc. Integrated Schottky diode and transistor
US5250834A (en) * 1991-09-19 1993-10-05 International Business Machines Corporation Silicide interconnection with schottky barrier diode isolation
US7528459B2 (en) * 2003-05-27 2009-05-05 Nxp B.V. Punch-through diode and method of processing the same
US7667264B2 (en) 2004-09-27 2010-02-23 Alpha And Omega Semiconductor Limited Shallow source MOSFET
US8093651B2 (en) * 2005-02-11 2012-01-10 Alpha & Omega Semiconductor Limited MOS device with integrated schottky diode in active region contact trench
US7285822B2 (en) * 2005-02-11 2007-10-23 Alpha & Omega Semiconductor, Inc. Power MOS device
US8362547B2 (en) 2005-02-11 2013-01-29 Alpha & Omega Semiconductor Limited MOS device with Schottky barrier controlling layer
US7948029B2 (en) 2005-02-11 2011-05-24 Alpha And Omega Semiconductor Incorporated MOS device with varying trench depth
US8283723B2 (en) * 2005-02-11 2012-10-09 Alpha & Omega Semiconductor Limited MOS device with low injection diode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2431011A1 (de) * 1973-06-28 1975-01-30 Sony Corp Halbleitervorrichtung
FR2313820A1 (fr) * 1975-06-03 1976-12-31 Siemens Ag Element logique
FR2317771A1 (fr) * 1975-07-07 1977-02-04 Siemens Ag Etage inverseur d'un circuit logique integre a injection
FR2337433A1 (fr) * 1975-12-29 1977-07-29 Tokyo Shibaura Electric Co Dispositif a semi-conducteur

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3938243A (en) * 1973-02-20 1976-02-17 Signetics Corporation Schottky barrier diode semiconductor structure and method
CA1056513A (fr) * 1975-06-19 1979-06-12 Benjamin J. Sloan (Jr.) Mode de fabrication de circuit logique integre

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2431011A1 (de) * 1973-06-28 1975-01-30 Sony Corp Halbleitervorrichtung
FR2313820A1 (fr) * 1975-06-03 1976-12-31 Siemens Ag Element logique
FR2317771A1 (fr) * 1975-07-07 1977-02-04 Siemens Ag Etage inverseur d'un circuit logique integre a injection
FR2337433A1 (fr) * 1975-12-29 1977-07-29 Tokyo Shibaura Electric Co Dispositif a semi-conducteur

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *
EXBK/77 *

Also Published As

Publication number Publication date
DE2822403A1 (de) 1978-12-07
NL7805471A (nl) 1978-11-28
US4156246A (en) 1979-05-22
JPS53145585A (en) 1978-12-18

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Legal Events

Date Code Title Description
ST Notification of lapse