SE8101994L - Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd - Google Patents

Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd

Info

Publication number
SE8101994L
SE8101994L SE8101994A SE8101994A SE8101994L SE 8101994 L SE8101994 L SE 8101994L SE 8101994 A SE8101994 A SE 8101994A SE 8101994 A SE8101994 A SE 8101994A SE 8101994 L SE8101994 L SE 8101994L
Authority
SE
Sweden
Prior art keywords
schottky
electronic circuit
contact element
different
pct
Prior art date
Application number
SE8101994A
Other languages
Unknown language ( )
English (en)
Inventor
Per-Arne Tove
Original Assignee
Tove Per Arne
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tove Per Arne filed Critical Tove Per Arne
Priority to SE8101994A priority Critical patent/SE8101994L/sv
Priority to AT82901043T priority patent/ATE16328T1/de
Priority to PCT/SE1982/000093 priority patent/WO1982003498A1/en
Priority to EP82901043A priority patent/EP0075575B1/en
Priority to US06/441,530 priority patent/US4554569A/en
Priority to DE8282901043T priority patent/DE3267101D1/de
Priority to JP57501153A priority patent/JPS58500464A/ja
Priority to AU82790/82A priority patent/AU8279082A/en
Publication of SE8101994L publication Critical patent/SE8101994L/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/806—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with Schottky drain or source contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
SE8101994A 1981-03-27 1981-03-27 Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd SE8101994L (sv)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SE8101994A SE8101994L (sv) 1981-03-27 1981-03-27 Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd
AT82901043T ATE16328T1 (de) 1981-03-27 1982-03-29 Elektronische schaltung.
PCT/SE1982/000093 WO1982003498A1 (en) 1981-03-27 1982-03-29 Electronic circuit
EP82901043A EP0075575B1 (en) 1981-03-27 1982-03-29 Electronic circuit
US06/441,530 US4554569A (en) 1981-03-27 1982-03-29 Integrated electron circuits having Schottky field effect transistors of P- and N-type
DE8282901043T DE3267101D1 (en) 1981-03-27 1982-03-29 Electronic circuit
JP57501153A JPS58500464A (ja) 1981-03-27 1982-03-29 電子回路
AU82790/82A AU8279082A (en) 1981-03-27 1982-03-29 Electronic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8101994A SE8101994L (sv) 1981-03-27 1981-03-27 Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd

Publications (1)

Publication Number Publication Date
SE8101994L true SE8101994L (sv) 1982-09-28

Family

ID=20343460

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8101994A SE8101994L (sv) 1981-03-27 1981-03-27 Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd

Country Status (6)

Country Link
US (1) US4554569A (sv)
EP (1) EP0075575B1 (sv)
JP (1) JPS58500464A (sv)
DE (1) DE3267101D1 (sv)
SE (1) SE8101994L (sv)
WO (1) WO1982003498A1 (sv)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286985A (en) * 1988-11-04 1994-02-15 Texas Instruments Incorporated Interface circuit operable to perform level shifting between a first type of device and a second type of device
RU2130668C1 (ru) * 1994-09-30 1999-05-20 Акционерное общество закрытого типа "VL" Полевой транзистор типа металл - диэлектрик-полупроводник
US20030235936A1 (en) * 1999-12-16 2003-12-25 Snyder John P. Schottky barrier CMOS device and method
US6303479B1 (en) * 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
US20060079059A1 (en) * 2001-08-10 2006-04-13 Snyder John P Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
EP1417718A1 (en) * 2001-08-10 2004-05-12 Spinnaker Semiconductor, Inc. Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
CN100401528C (zh) * 2002-01-23 2008-07-09 斯平内克半导体股份有限公司 具有与应变半导体基片形成肖特基或肖特基类接触的源极和/或漏极的场效应晶体管
WO2003098693A2 (en) * 2002-05-16 2003-11-27 Spinnaker Semiconductor, Inc. Schottky barrier cmos device and method
US6974737B2 (en) * 2002-05-16 2005-12-13 Spinnaker Semiconductor, Inc. Schottky barrier CMOS fabrication method
US9685509B2 (en) 2013-07-30 2017-06-20 Samsung Electronics Co., Ltd. Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions
US9917158B2 (en) 2013-07-30 2018-03-13 Samsung Electronics Co., Ltd. Device contact structures including heterojunctions for low contact resistance
EP3971973A1 (en) * 2020-09-18 2022-03-23 III-V Technologies GmbH Inverters, amplifiers and universal gates based on stacked gate mesfet and hemt

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767984A (en) * 1969-09-03 1973-10-23 Nippon Electric Co Schottky barrier type field effect transistor
GB1507091A (en) * 1974-03-29 1978-04-12 Siemens Ag Schottky-gate field-effect transistors
GB1543363A (en) * 1975-02-26 1979-04-04 Nippon Electric Co Dual-gate schottky barrier gate field effect transistors
US4075651A (en) * 1976-03-29 1978-02-21 Varian Associates, Inc. High speed fet employing ternary and quarternary iii-v active layers
US4141020A (en) * 1976-12-29 1979-02-20 International Business Machines Corporation Intermetallic aluminum-transition metal compound Schottky contact
FR2386903A1 (fr) * 1977-04-08 1978-11-03 Thomson Csf Transistor a effet de champ sur support a grande bande interdite
US4160984A (en) * 1977-11-14 1979-07-10 Hughes Aircraft Company Schottky-gate field-effect transistor and fabrication process therefor
US4183033A (en) * 1978-03-13 1980-01-08 National Research Development Corporation Field effect transistors
US4233337A (en) * 1978-05-01 1980-11-11 International Business Machines Corporation Method for forming semiconductor contacts
JPS55132068A (en) * 1979-03-30 1980-10-14 Ibm Pnp bipolar transistor
DE2917407C2 (de) * 1979-04-28 1982-10-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Hochfrequenz-Sperrschicht-Feldeffekttransistor
US4236166A (en) * 1979-07-05 1980-11-25 Bell Telephone Laboratories, Incorporated Vertical field effect transistor
FR2465318A1 (fr) * 1979-09-10 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
US4300152A (en) * 1980-04-07 1981-11-10 Bell Telephone Laboratories, Incorporated Complementary field-effect transistor integrated circuit device
US4394673A (en) * 1980-09-29 1983-07-19 International Business Machines Corporation Rare earth silicide Schottky barriers
US4325181A (en) * 1980-12-17 1982-04-20 The United States Of America As Represented By The Secretary Of The Navy Simplified fabrication method for high-performance FET

Also Published As

Publication number Publication date
DE3267101D1 (en) 1985-12-05
EP0075575B1 (en) 1985-10-30
WO1982003498A1 (en) 1982-10-14
EP0075575A1 (en) 1983-04-06
US4554569A (en) 1985-11-19
JPS58500464A (ja) 1983-03-24

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