NL7805471A - Logische halfgeleiderinrichting. - Google Patents
Logische halfgeleiderinrichting.Info
- Publication number
- NL7805471A NL7805471A NL7805471A NL7805471A NL7805471A NL 7805471 A NL7805471 A NL 7805471A NL 7805471 A NL7805471 A NL 7805471A NL 7805471 A NL7805471 A NL 7805471A NL 7805471 A NL7805471 A NL 7805471A
- Authority
- NL
- Netherlands
- Prior art keywords
- conductor device
- logical
- semi
- logical semi
- conductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/800,282 US4156246A (en) | 1977-05-25 | 1977-05-25 | Combined ohmic and Schottky output transistors for logic circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7805471A true NL7805471A (nl) | 1978-11-28 |
Family
ID=25177976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7805471A NL7805471A (nl) | 1977-05-25 | 1978-05-19 | Logische halfgeleiderinrichting. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4156246A (nl) |
| JP (1) | JPS53145585A (nl) |
| DE (1) | DE2822403A1 (nl) |
| FR (1) | FR2392499A1 (nl) |
| NL (1) | NL7805471A (nl) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4282538A (en) * | 1977-11-11 | 1981-08-04 | Rca Corporation | Method of integrating semiconductor components |
| DE2835930C2 (de) * | 1978-08-17 | 1986-07-17 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte Halbleiterschaltungsanordnung mit mindestens einem Lateraltransistor |
| US4373166A (en) * | 1978-12-20 | 1983-02-08 | Ibm Corporation | Schottky Barrier diode with controlled characteristics |
| US4357178A (en) * | 1978-12-20 | 1982-11-02 | Ibm Corporation | Schottky barrier diode with controlled characteristics and fabrication method |
| US4214315A (en) * | 1979-03-16 | 1980-07-22 | International Business Machines Corporation | Method for fabricating vertical NPN and PNP structures and the resulting product |
| GB2050694B (en) * | 1979-05-07 | 1983-09-28 | Nippon Telegraph & Telephone | Electrode structure for a semiconductor device |
| JPS5669844A (en) * | 1979-11-10 | 1981-06-11 | Toshiba Corp | Manufacture of semiconductor device |
| DE3071489D1 (en) * | 1979-11-29 | 1986-04-17 | Vlsi Technology Res Ass | Method of manufacturing a semiconductor device with a schottky junction |
| US4281448A (en) * | 1980-04-14 | 1981-08-04 | Gte Laboratories Incorporated | Method of fabricating a diode bridge rectifier in monolithic integrated circuit structure utilizing isolation diffusions and metal semiconductor rectifying barrier diode formation |
| JPH0693512B2 (ja) * | 1986-06-17 | 1994-11-16 | 日産自動車株式会社 | 縦形ｍｏｓｆｅｔ |
| US4871686A (en) * | 1988-03-28 | 1989-10-03 | Motorola, Inc. | Integrated Schottky diode and transistor |
| US5250834A (en) * | 1991-09-19 | 1993-10-05 | International Business Machines Corporation | Silicide interconnection with schottky barrier diode isolation |
| US7528459B2 (en) * | 2003-05-27 | 2009-05-05 | Nxp B.V. | Punch-through diode and method of processing the same |
| US7667264B2 (en) | 2004-09-27 | 2010-02-23 | Alpha And Omega Semiconductor Limited | Shallow source MOSFET |
| US7285822B2 (en) * | 2005-02-11 | 2007-10-23 | Alpha & Omega Semiconductor, Inc. | Power MOS device |
| US7948029B2 (en) | 2005-02-11 | 2011-05-24 | Alpha And Omega Semiconductor Incorporated | MOS device with varying trench depth |
| US8093651B2 (en) * | 2005-02-11 | 2012-01-10 | Alpha & Omega Semiconductor Limited | MOS device with integrated schottky diode in active region contact trench |
| US8283723B2 (en) * | 2005-02-11 | 2012-10-09 | Alpha & Omega Semiconductor Limited | MOS device with low injection diode |
| US8362547B2 (en) | 2005-02-11 | 2013-01-29 | Alpha & Omega Semiconductor Limited | MOS device with Schottky barrier controlling layer |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3938243A (en) * | 1973-02-20 | 1976-02-17 | Signetics Corporation | Schottky barrier diode semiconductor structure and method |
| JPS5548705B2 (nl) * | 1973-06-28 | 1980-12-08 | ||
| DE2524579C3 (de) * | 1975-06-03 | 1980-11-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiter-Logikglied |
| CA1056513A (en) * | 1975-06-19 | 1979-06-12 | Benjamin J. Sloan (Jr.) | Integrated logic circuit and method of fabrication |
| DE2530288C3 (de) * | 1975-07-07 | 1982-02-18 | Siemens AG, 1000 Berlin und 8000 München | Inverter in integrierter Injektionslogik |
| FR2337433A1 (fr) * | 1975-12-29 | 1977-07-29 | Tokyo Shibaura Electric Co | Dispositif a semi-conducteur |
-
1977
- 1977-05-25 US US05/800,282 patent/US4156246A/en not_active Expired - Lifetime
-
1978
- 1978-05-19 NL NL7805471A patent/NL7805471A/nl not_active Application Discontinuation
- 1978-05-22 FR FR7815050A patent/FR2392499A1/fr not_active Withdrawn
- 1978-05-23 DE DE19782822403 patent/DE2822403A1/de active Pending
- 1978-05-25 JP JP6174278A patent/JPS53145585A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2822403A1 (de) | 1978-12-07 |
| US4156246A (en) | 1979-05-22 |
| FR2392499A1 (fr) | 1978-12-22 |
| JPS53145585A (en) | 1978-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BV | The patent application has lapsed |