FR2337433A1 - Dispositif a semi-conducteur - Google Patents

Dispositif a semi-conducteur

Info

Publication number
FR2337433A1
FR2337433A1 FR7539996A FR7539996A FR2337433A1 FR 2337433 A1 FR2337433 A1 FR 2337433A1 FR 7539996 A FR7539996 A FR 7539996A FR 7539996 A FR7539996 A FR 7539996A FR 2337433 A1 FR2337433 A1 FR 2337433A1
Authority
FR
France
Prior art keywords
zone
current consumption
low current
integrated injection
logic circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7539996A
Other languages
English (en)
Other versions
FR2337433B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to FR7539996A priority Critical patent/FR2337433A1/fr
Publication of FR2337433A1 publication Critical patent/FR2337433A1/fr
Application granted granted Critical
Publication of FR2337433B1 publication Critical patent/FR2337433B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7539996A 1975-12-29 1975-12-29 Dispositif a semi-conducteur Granted FR2337433A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7539996A FR2337433A1 (fr) 1975-12-29 1975-12-29 Dispositif a semi-conducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7539996A FR2337433A1 (fr) 1975-12-29 1975-12-29 Dispositif a semi-conducteur

Publications (2)

Publication Number Publication Date
FR2337433A1 true FR2337433A1 (fr) 1977-07-29
FR2337433B1 FR2337433B1 (fr) 1980-08-08

Family

ID=9164268

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7539996A Granted FR2337433A1 (fr) 1975-12-29 1975-12-29 Dispositif a semi-conducteur

Country Status (1)

Country Link
FR (1) FR2337433A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2392499A1 (fr) * 1977-05-25 1978-12-22 Western Electric Co Dispositif semi-conducteur en logique integree a injection
EP0000909A1 (fr) * 1977-08-31 1979-03-07 International Business Machines Corporation Transistor latéral

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2392499A1 (fr) * 1977-05-25 1978-12-22 Western Electric Co Dispositif semi-conducteur en logique integree a injection
EP0000909A1 (fr) * 1977-08-31 1979-03-07 International Business Machines Corporation Transistor latéral

Also Published As

Publication number Publication date
FR2337433B1 (fr) 1980-08-08

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Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse