FR2391769A1 - Systeme et procede de croissance epitaxiale par faisceau moleculaire avec introduction d'hydrogene - Google Patents

Systeme et procede de croissance epitaxiale par faisceau moleculaire avec introduction d'hydrogene

Info

Publication number
FR2391769A1
FR2391769A1 FR7802117A FR7802117A FR2391769A1 FR 2391769 A1 FR2391769 A1 FR 2391769A1 FR 7802117 A FR7802117 A FR 7802117A FR 7802117 A FR7802117 A FR 7802117A FR 2391769 A1 FR2391769 A1 FR 2391769A1
Authority
FR
France
Prior art keywords
molecular beam
epitaxial growth
hydrogen
hydrogen introduction
want
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7802117A
Other languages
English (en)
Other versions
FR2391769B1 (fr
Inventor
Chin-An Chang
Leroy L Chang
Leo Esaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2391769A1 publication Critical patent/FR2391769A1/fr
Application granted granted Critical
Publication of FR2391769B1 publication Critical patent/FR2391769B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Abstract

Système et procédé de croissance épitaxiale par faisceau moléculaire avec introduction d'hydrogène. Le système comprend une chambre à ultra-vide 10, une tranche de semi-conducteur 20 sur laquelle on veut faire croître une couche épitaxiale, une couche 12 du matériau que l'on désire déposer. Ce système est caractérisé en ce qu'il comporte en outre une source d'hydrogène 14 dont le débit et l'ionisation sont assurés par le dispositif 18. On a trouvé que la présence de l'hydrogène permettait d'éliminer les problèmes posés par la présence de l'oxygène dans la chambre et d'améliorer ainsi la mobilité des porteurs. Application à la fabrication des dispositifs à servi-conducteurs.
FR7802117A 1977-05-26 1978-01-20 Systeme et procede de croissance epitaxiale par faisceau moleculaire avec introduction d'hydrogene Granted FR2391769A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80082777A 1977-05-26 1977-05-26

Publications (2)

Publication Number Publication Date
FR2391769A1 true FR2391769A1 (fr) 1978-12-22
FR2391769B1 FR2391769B1 (fr) 1980-08-29

Family

ID=25179475

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7802117A Granted FR2391769A1 (fr) 1977-05-26 1978-01-20 Systeme et procede de croissance epitaxiale par faisceau moleculaire avec introduction d'hydrogene

Country Status (6)

Country Link
JP (1) JPS53147462A (fr)
CA (1) CA1102013A (fr)
DE (1) DE2806766A1 (fr)
FR (1) FR2391769A1 (fr)
GB (1) GB1598051A (fr)
IT (1) IT1109159B (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2511709A1 (fr) * 1981-08-21 1983-02-25 Thomson Csf Procede pour obtenir un vide pousse dans l'enceinte d'un reacteur d'epitaxie par jets moleculaires et reacteur mettant en oeuvre ce procede
EP0113983A1 (fr) * 1982-12-16 1984-07-25 Fujitsu Limited Fabrication d'un dispositif semi-conducteur au moyen d'épitaxie par faisceau moléculaire
US4477311A (en) * 1982-12-28 1984-10-16 Fujitsu Limited Process and apparatus for fabricating a semiconductor device
EP0250603A1 (fr) * 1985-12-09 1988-01-07 Nippon Telegraph and Telephone Corporation Procede de formation d'une fine pellicule de semiconducteur compose

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957416A (ja) * 1982-09-27 1984-04-03 Konishiroku Photo Ind Co Ltd 化合物半導体層の形成方法
GB8324779D0 (en) * 1982-09-29 1983-10-19 Nat Res Dev Depositing film onto substrate
JPS6135510A (ja) * 1984-07-27 1986-02-20 Agency Of Ind Science & Technol 分子線エピタキシ−成長法
JPS61177366A (ja) * 1985-01-31 1986-08-09 Sharp Corp 超微粒子分散基板の製造装置
JPS61214511A (ja) * 1985-03-20 1986-09-24 Sharp Corp 結晶成長方法
JPS61218130A (ja) * 1985-03-23 1986-09-27 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体の結晶成長方法
JP2533501B2 (ja) * 1986-09-26 1996-09-11 日本電信電話株式会社 半導体エピタキシヤル成長法
US4869776A (en) * 1986-07-29 1989-09-26 Sharp Kabushiki Kaisha Method for the growth of a compound semiconductor crystal
JP2671360B2 (ja) * 1988-03-19 1997-10-29 富士通株式会社 反応性ガスエッチング方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2027188A1 (fr) * 1968-12-27 1970-09-25 Western Electric Co
DE2313846A1 (de) * 1973-03-20 1974-10-03 Siemens Ag Verfahren zur herstellung einer heteroepitaktisch abgeschiedenen schicht eines halbleitermaterials
US3949119A (en) * 1972-05-04 1976-04-06 Atomic Energy Of Canada Limited Method of gas doping of vacuum evaporated epitaxial silicon films

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2027188A1 (fr) * 1968-12-27 1970-09-25 Western Electric Co
US3949119A (en) * 1972-05-04 1976-04-06 Atomic Energy Of Canada Limited Method of gas doping of vacuum evaporated epitaxial silicon films
DE2313846A1 (de) * 1973-03-20 1974-10-03 Siemens Ag Verfahren zur herstellung einer heteroepitaktisch abgeschiedenen schicht eines halbleitermaterials

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV1046/72 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2511709A1 (fr) * 1981-08-21 1983-02-25 Thomson Csf Procede pour obtenir un vide pousse dans l'enceinte d'un reacteur d'epitaxie par jets moleculaires et reacteur mettant en oeuvre ce procede
EP0113983A1 (fr) * 1982-12-16 1984-07-25 Fujitsu Limited Fabrication d'un dispositif semi-conducteur au moyen d'épitaxie par faisceau moléculaire
US4477311A (en) * 1982-12-28 1984-10-16 Fujitsu Limited Process and apparatus for fabricating a semiconductor device
EP0250603A1 (fr) * 1985-12-09 1988-01-07 Nippon Telegraph and Telephone Corporation Procede de formation d'une fine pellicule de semiconducteur compose
EP0250603A4 (fr) * 1985-12-09 1988-11-28 Nippon Telegraph & Telephone Procede de formation d'une fine pellicule de semiconducteur compose.
US4829022A (en) * 1985-12-09 1989-05-09 Nippon Telegraph And Telephone Corporation Method for forming thin films of compound semiconductors by flow rate modulation epitaxy

Also Published As

Publication number Publication date
DE2806766A1 (de) 1978-12-07
GB1598051A (en) 1981-09-16
IT7820149A0 (it) 1978-02-10
FR2391769B1 (fr) 1980-08-29
IT1109159B (it) 1985-12-16
JPS5528544B2 (fr) 1980-07-29
JPS53147462A (en) 1978-12-22
CA1102013A (fr) 1981-05-26

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