JPS53147462A - Molecular beam epitaxial device - Google Patents
Molecular beam epitaxial deviceInfo
- Publication number
- JPS53147462A JPS53147462A JP627678A JP627678A JPS53147462A JP S53147462 A JPS53147462 A JP S53147462A JP 627678 A JP627678 A JP 627678A JP 627678 A JP627678 A JP 627678A JP S53147462 A JPS53147462 A JP S53147462A
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- beam epitaxial
- epitaxial device
- molecular
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80082777A | 1977-05-26 | 1977-05-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53147462A true JPS53147462A (en) | 1978-12-22 |
JPS5528544B2 JPS5528544B2 (ja) | 1980-07-29 |
Family
ID=25179475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP627678A Granted JPS53147462A (en) | 1977-05-26 | 1978-01-25 | Molecular beam epitaxial device |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS53147462A (ja) |
CA (1) | CA1102013A (ja) |
DE (1) | DE2806766A1 (ja) |
FR (1) | FR2391769A1 (ja) |
GB (1) | GB1598051A (ja) |
IT (1) | IT1109159B (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5957416A (ja) * | 1982-09-27 | 1984-04-03 | Konishiroku Photo Ind Co Ltd | 化合物半導体層の形成方法 |
JPS6135510A (ja) * | 1984-07-27 | 1986-02-20 | Agency Of Ind Science & Technol | 分子線エピタキシ−成長法 |
JPS61214511A (ja) * | 1985-03-20 | 1986-09-24 | Sharp Corp | 結晶成長方法 |
JPS61218130A (ja) * | 1985-03-23 | 1986-09-27 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体の結晶成長方法 |
JPS6385088A (ja) * | 1986-09-26 | 1988-04-15 | Nippon Telegr & Teleph Corp <Ntt> | 半導体エピタキシヤル成長法 |
JPH01239846A (ja) * | 1988-03-19 | 1989-09-25 | Fujitsu Ltd | 反応性ガスエッチング方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2511709A1 (fr) * | 1981-08-21 | 1983-02-25 | Thomson Csf | Procede pour obtenir un vide pousse dans l'enceinte d'un reacteur d'epitaxie par jets moleculaires et reacteur mettant en oeuvre ce procede |
GB8324779D0 (en) * | 1982-09-29 | 1983-10-19 | Nat Res Dev | Depositing film onto substrate |
JPS59123226A (ja) * | 1982-12-28 | 1984-07-17 | Fujitsu Ltd | 半導体装置の製造装置 |
EP0113983B1 (en) * | 1982-12-16 | 1987-04-22 | Fujitsu Limited | Fabricating a semiconductor device by means of molecular beam epitaxy |
JPS61177366A (ja) * | 1985-01-31 | 1986-08-09 | Sharp Corp | 超微粒子分散基板の製造装置 |
EP0250603B1 (en) * | 1985-12-09 | 1994-07-06 | Nippon Telegraph and Telephone Corporation | Process for forming thin film of compound semiconductor |
US4869776A (en) * | 1986-07-29 | 1989-09-26 | Sharp Kabushiki Kaisha | Method for the growth of a compound semiconductor crystal |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615931A (en) * | 1968-12-27 | 1971-10-26 | Bell Telephone Labor Inc | Technique for growth of epitaxial compound semiconductor films |
US3949119A (en) * | 1972-05-04 | 1976-04-06 | Atomic Energy Of Canada Limited | Method of gas doping of vacuum evaporated epitaxial silicon films |
DE2313846A1 (de) * | 1973-03-20 | 1974-10-03 | Siemens Ag | Verfahren zur herstellung einer heteroepitaktisch abgeschiedenen schicht eines halbleitermaterials |
-
1977
- 1977-11-24 CA CA291,679A patent/CA1102013A/en not_active Expired
-
1978
- 1978-01-20 GB GB2458/78A patent/GB1598051A/en not_active Expired
- 1978-01-20 FR FR7802117A patent/FR2391769A1/fr active Granted
- 1978-01-25 JP JP627678A patent/JPS53147462A/ja active Granted
- 1978-02-10 IT IT20149/78A patent/IT1109159B/it active
- 1978-02-17 DE DE19782806766 patent/DE2806766A1/de not_active Withdrawn
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5957416A (ja) * | 1982-09-27 | 1984-04-03 | Konishiroku Photo Ind Co Ltd | 化合物半導体層の形成方法 |
JPS6135510A (ja) * | 1984-07-27 | 1986-02-20 | Agency Of Ind Science & Technol | 分子線エピタキシ−成長法 |
JPH0137847B2 (ja) * | 1984-07-27 | 1989-08-09 | Kogyo Gijutsuin | |
JPS61214511A (ja) * | 1985-03-20 | 1986-09-24 | Sharp Corp | 結晶成長方法 |
JPS61218130A (ja) * | 1985-03-23 | 1986-09-27 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体の結晶成長方法 |
JPS6385088A (ja) * | 1986-09-26 | 1988-04-15 | Nippon Telegr & Teleph Corp <Ntt> | 半導体エピタキシヤル成長法 |
JPH01239846A (ja) * | 1988-03-19 | 1989-09-25 | Fujitsu Ltd | 反応性ガスエッチング方法 |
Also Published As
Publication number | Publication date |
---|---|
DE2806766A1 (de) | 1978-12-07 |
JPS5528544B2 (ja) | 1980-07-29 |
IT1109159B (it) | 1985-12-16 |
CA1102013A (en) | 1981-05-26 |
GB1598051A (en) | 1981-09-16 |
FR2391769A1 (fr) | 1978-12-22 |
IT7820149A0 (it) | 1978-02-10 |
FR2391769B1 (ja) | 1980-08-29 |
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