CA1102013A - Traduction non-disponible - Google Patents
Traduction non-disponibleInfo
- Publication number
- CA1102013A CA1102013A CA291,679A CA291679A CA1102013A CA 1102013 A CA1102013 A CA 1102013A CA 291679 A CA291679 A CA 291679A CA 1102013 A CA1102013 A CA 1102013A
- Authority
- CA
- Canada
- Prior art keywords
- hydrogen
- molecular
- substrate
- beam epitaxy
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000001257 hydrogen Substances 0.000 title claims abstract description 33
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 33
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000001451 molecular beam epitaxy Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 125000004429 atom Chemical group 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 230000000704 physical effect Effects 0.000 claims 1
- 238000001179 sorption measurement Methods 0.000 claims 1
- 238000000407 epitaxy Methods 0.000 abstract description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000002019 doping agent Substances 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000001311 chemical methods and process Methods 0.000 abstract 1
- 230000003993 interaction Effects 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OPFJDXRVMFKJJO-ZHHKINOHSA-N N-{[3-(2-benzamido-4-methyl-1,3-thiazol-5-yl)-pyrazol-5-yl]carbonyl}-G-dR-G-dD-dD-dD-NH2 Chemical compound S1C(C=2NN=C(C=2)C(=O)NCC(=O)N[C@H](CCCN=C(N)N)C(=O)NCC(=O)N[C@H](CC(O)=O)C(=O)N[C@H](CC(O)=O)C(=O)N[C@H](CC(O)=O)C(N)=O)=C(C)N=C1NC(=O)C1=CC=CC=C1 OPFJDXRVMFKJJO-ZHHKINOHSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229940126086 compound 21 Drugs 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80082777A | 1977-05-26 | 1977-05-26 | |
| US800,827 | 1977-05-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1102013A true CA1102013A (fr) | 1981-05-26 |
Family
ID=25179475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA291,679A Expired CA1102013A (fr) | 1977-05-26 | 1977-11-24 | Traduction non-disponible |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS53147462A (fr) |
| CA (1) | CA1102013A (fr) |
| DE (1) | DE2806766A1 (fr) |
| FR (1) | FR2391769A1 (fr) |
| GB (1) | GB1598051A (fr) |
| IT (1) | IT1109159B (fr) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2511709A1 (fr) * | 1981-08-21 | 1983-02-25 | Thomson Csf | Procede pour obtenir un vide pousse dans l'enceinte d'un reacteur d'epitaxie par jets moleculaires et reacteur mettant en oeuvre ce procede |
| JPS5957416A (ja) * | 1982-09-27 | 1984-04-03 | Konishiroku Photo Ind Co Ltd | 化合物半導体層の形成方法 |
| GB8324779D0 (en) * | 1982-09-29 | 1983-10-19 | Nat Res Dev | Depositing film onto substrate |
| EP0113983B1 (fr) * | 1982-12-16 | 1987-04-22 | Fujitsu Limited | Fabrication d'un dispositif semi-conducteur au moyen d'épitaxie par faisceau moléculaire |
| JPS59123226A (ja) * | 1982-12-28 | 1984-07-17 | Fujitsu Ltd | 半導体装置の製造装置 |
| JPS6135510A (ja) * | 1984-07-27 | 1986-02-20 | Agency Of Ind Science & Technol | 分子線エピタキシ−成長法 |
| JPS61177366A (ja) * | 1985-01-31 | 1986-08-09 | Sharp Corp | 超微粒子分散基板の製造装置 |
| JPS61214511A (ja) * | 1985-03-20 | 1986-09-24 | Sharp Corp | 結晶成長方法 |
| JPS61218130A (ja) * | 1985-03-23 | 1986-09-27 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体の結晶成長方法 |
| US4829022A (en) * | 1985-12-09 | 1989-05-09 | Nippon Telegraph And Telephone Corporation | Method for forming thin films of compound semiconductors by flow rate modulation epitaxy |
| JP2533501B2 (ja) * | 1986-09-26 | 1996-09-11 | 日本電信電話株式会社 | 半導体エピタキシヤル成長法 |
| US4869776A (en) * | 1986-07-29 | 1989-09-26 | Sharp Kabushiki Kaisha | Method for the growth of a compound semiconductor crystal |
| JP2671360B2 (ja) * | 1988-03-19 | 1997-10-29 | 富士通株式会社 | 反応性ガスエッチング方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3615931A (en) * | 1968-12-27 | 1971-10-26 | Bell Telephone Labor Inc | Technique for growth of epitaxial compound semiconductor films |
| US3949119A (en) * | 1972-05-04 | 1976-04-06 | Atomic Energy Of Canada Limited | Method of gas doping of vacuum evaporated epitaxial silicon films |
| DE2313846A1 (de) * | 1973-03-20 | 1974-10-03 | Siemens Ag | Verfahren zur herstellung einer heteroepitaktisch abgeschiedenen schicht eines halbleitermaterials |
-
1977
- 1977-11-24 CA CA291,679A patent/CA1102013A/fr not_active Expired
-
1978
- 1978-01-20 GB GB2458/78A patent/GB1598051A/en not_active Expired
- 1978-01-20 FR FR7802117A patent/FR2391769A1/fr active Granted
- 1978-01-25 JP JP627678A patent/JPS53147462A/ja active Granted
- 1978-02-10 IT IT20149/78A patent/IT1109159B/it active
- 1978-02-17 DE DE19782806766 patent/DE2806766A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB1598051A (en) | 1981-09-16 |
| FR2391769A1 (fr) | 1978-12-22 |
| FR2391769B1 (fr) | 1980-08-29 |
| DE2806766A1 (de) | 1978-12-07 |
| JPS53147462A (en) | 1978-12-22 |
| IT7820149A0 (it) | 1978-02-10 |
| IT1109159B (it) | 1985-12-16 |
| JPS5528544B2 (fr) | 1980-07-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1317857C (fr) | Production homoepitaxiale de mines pellicules alpha-sic et appareils semiconducteurs fabriques a partir de ces pellicules | |
| US5011549A (en) | Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon | |
| US3956032A (en) | Process for fabricating SiC semiconductor devices | |
| US3751310A (en) | Germanium doped epitaxial films by the molecular beam method | |
| CA1102013A (fr) | Traduction non-disponible | |
| US3634149A (en) | Method of manufacturing aluminium nitride crystals for semiconductor devices | |
| US5425860A (en) | Pulsed energy synthesis and doping of silicon carbide | |
| Houng et al. | Te doping of GaAs and AlxGa1− xAs using diethyltellurium in low pressure OMVPE | |
| CA1122859A (fr) | Materiaux a base de nitrure d'aluminium de qualite electronique | |
| Ostrom et al. | Boron doping in Si molecular beam epitaxy by co‐evaporation of B2O3 or doped silicon | |
| Tischler et al. | Growth and characterization of compound semiconductors by atomic layer epitaxy | |
| EP0148357B1 (fr) | Procédé de dépôt chimique à vapeurs organométalliqes pour le dépôt de composés semi-conducteurs intermétalliques dopés de silicium | |
| US4239584A (en) | Molecular-beam epitaxy system and method including hydrogen treatment | |
| US4504329A (en) | Process for the epitaxial deposition of III-V compounds utilizing a binary alloy as the metallic source | |
| Meggitt et al. | Thin InAs epitaxial layers grown on (100) GaAs substrates by molecular beam deposition | |
| US4592793A (en) | Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates | |
| Kasai et al. | PbTe and Pb0. 8Sn0. 2Te epitaxial films on cleaved BaF2 substrates prepared by a modified hot‐wall technique | |
| US4948751A (en) | Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor | |
| US4782034A (en) | Semi-insulating group III-V based compositions doped using bis arene titanium sources | |
| US5288365A (en) | Method for growing a silicon carbide single crystal | |
| Parsons et al. | Temperature-independent unassisted pyrolytic MOCVD growth of cadmium telluride at 290° C and mercury telluride at 325° C using dimethylcadmium methylallyltelluride and dimethylmercury | |
| EP0524817B1 (fr) | Méthode de croissance de cristaux semi-conducteurs d'un compose A-III - B V | |
| US5047370A (en) | Method for producing compound semiconductor single crystal substrates | |
| US4426237A (en) | Volatile metal oxide suppression in molecular beam epitaxy systems | |
| Chow et al. | Electrical and optical properties of InP grown by molecular beam epitaxy using cracked phosphine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |