FR2377096A1 - Thyristor semi-conducteur - Google Patents

Thyristor semi-conducteur

Info

Publication number
FR2377096A1
FR2377096A1 FR7800320A FR7800320A FR2377096A1 FR 2377096 A1 FR2377096 A1 FR 2377096A1 FR 7800320 A FR7800320 A FR 7800320A FR 7800320 A FR7800320 A FR 7800320A FR 2377096 A1 FR2377096 A1 FR 2377096A1
Authority
FR
France
Prior art keywords
region
cathode
anode
semiconductor thyristor
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7800320A
Other languages
English (en)
French (fr)
Other versions
FR2377096B1 (en, 2012
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2377096A1 publication Critical patent/FR2377096A1/fr
Application granted granted Critical
Publication of FR2377096B1 publication Critical patent/FR2377096B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
FR7800320A 1977-01-07 1978-01-06 Thyristor semi-conducteur Granted FR2377096A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/757,554 US4292646A (en) 1977-01-07 1977-01-07 Semiconductor thyristor device having integral ballast means

Publications (2)

Publication Number Publication Date
FR2377096A1 true FR2377096A1 (fr) 1978-08-04
FR2377096B1 FR2377096B1 (en, 2012) 1983-07-08

Family

ID=25048270

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7800320A Granted FR2377096A1 (fr) 1977-01-07 1978-01-06 Thyristor semi-conducteur

Country Status (8)

Country Link
US (1) US4292646A (en, 2012)
JP (1) JPS5387184A (en, 2012)
CA (1) CA1080858A (en, 2012)
DE (1) DE2758616A1 (en, 2012)
FR (1) FR2377096A1 (en, 2012)
GB (1) GB1562046A (en, 2012)
IT (1) IT1088746B (en, 2012)
SE (1) SE433276B (en, 2012)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
JPS60187058A (ja) * 1984-03-07 1985-09-24 Hitachi Ltd 半導体装置
EP0178582A3 (en) * 1984-10-15 1989-02-08 Hitachi, Ltd. Reverse blocking type semiconductor device
DE3902300C3 (de) * 1988-01-30 1995-02-09 Toshiba Kawasaki Kk Abschaltthyristor
JP2663679B2 (ja) * 1990-04-20 1997-10-15 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
JP3211604B2 (ja) * 1995-02-03 2001-09-25 株式会社日立製作所 半導体装置
JP2002184952A (ja) * 2000-12-15 2002-06-28 Shindengen Electric Mfg Co Ltd 半導体装置、半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
US3360696A (en) * 1965-05-14 1967-12-26 Rca Corp Five-layer symmetrical semiconductor switch
FR2198265A1 (en, 2012) * 1972-09-06 1974-03-29 Bbc Brown Boveri & Cie

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3351826A (en) * 1963-02-05 1967-11-07 Leroy N Hermann Five-region, three electrode, symmetrical semiconductor device, with resistive means connecting certain regions
GB1073560A (en) * 1964-12-28 1967-06-28 Gen Electric Improvements in semiconductor devices
JPS5310746B2 (en, 2012) * 1973-05-11 1978-04-15

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
US3360696A (en) * 1965-05-14 1967-12-26 Rca Corp Five-layer symmetrical semiconductor switch
FR2198265A1 (en, 2012) * 1972-09-06 1974-03-29 Bbc Brown Boveri & Cie

Also Published As

Publication number Publication date
US4292646A (en) 1981-09-29
SE433276B (sv) 1984-05-14
GB1562046A (en) 1980-03-05
FR2377096B1 (en, 2012) 1983-07-08
JPS5751983B2 (en, 2012) 1982-11-05
CA1080858A (en) 1980-07-01
SE7714186L (sv) 1978-07-08
JPS5387184A (en) 1978-08-01
IT1088746B (it) 1985-06-10
DE2758616A1 (de) 1978-07-13

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Legal Events

Date Code Title Description
ST Notification of lapse