CA1080858A - Semiconductor thyristor device - Google Patents
Semiconductor thyristor deviceInfo
- Publication number
- CA1080858A CA1080858A CA293,973A CA293973A CA1080858A CA 1080858 A CA1080858 A CA 1080858A CA 293973 A CA293973 A CA 293973A CA 1080858 A CA1080858 A CA 1080858A
- Authority
- CA
- Canada
- Prior art keywords
- region
- gate
- junction
- anode
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims description 16
- 230000015556 catabolic process Effects 0.000 description 12
- 230000006378 damage Effects 0.000 description 10
- 230000001052 transient effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002674 ointment Substances 0.000 description 2
- VMXJCRHCUWKQCB-UHFFFAOYSA-N NPNP Chemical compound NPNP VMXJCRHCUWKQCB-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
Landscapes
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/757,554 US4292646A (en) | 1977-01-07 | 1977-01-07 | Semiconductor thyristor device having integral ballast means |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1080858A true CA1080858A (en) | 1980-07-01 |
Family
ID=25048270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA293,973A Expired CA1080858A (en) | 1977-01-07 | 1977-12-28 | Semiconductor thyristor device |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4292646A (en, 2012) |
| JP (1) | JPS5387184A (en, 2012) |
| CA (1) | CA1080858A (en, 2012) |
| DE (1) | DE2758616A1 (en, 2012) |
| FR (1) | FR2377096A1 (en, 2012) |
| GB (1) | GB1562046A (en, 2012) |
| IT (1) | IT1088746B (en, 2012) |
| SE (1) | SE433276B (en, 2012) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4577208A (en) * | 1982-09-23 | 1986-03-18 | Eaton Corporation | Bidirectional power FET with integral avalanche protection |
| JPS60187058A (ja) * | 1984-03-07 | 1985-09-24 | Hitachi Ltd | 半導体装置 |
| EP0178582A3 (en) * | 1984-10-15 | 1989-02-08 | Hitachi, Ltd. | Reverse blocking type semiconductor device |
| DE3902300C3 (de) * | 1988-01-30 | 1995-02-09 | Toshiba Kawasaki Kk | Abschaltthyristor |
| JP2663679B2 (ja) * | 1990-04-20 | 1997-10-15 | 富士電機株式会社 | 伝導度変調型ｍｏｓｆｅｔ |
| JP3211604B2 (ja) * | 1995-02-03 | 2001-09-25 | 株式会社日立製作所 | 半導体装置 |
| JP2002184952A (ja) * | 2000-12-15 | 2002-06-28 | Shindengen Electric Mfg Co Ltd | 半導体装置、半導体装置の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3351826A (en) * | 1963-02-05 | 1967-11-07 | Leroy N Hermann | Five-region, three electrode, symmetrical semiconductor device, with resistive means connecting certain regions |
| US3343048A (en) * | 1964-02-20 | 1967-09-19 | Westinghouse Electric Corp | Four layer semiconductor switching devices having a shorted emitter and method of making the same |
| GB1073560A (en) * | 1964-12-28 | 1967-06-28 | Gen Electric | Improvements in semiconductor devices |
| FR1483998A (en, 2012) * | 1965-05-14 | 1967-09-13 | ||
| CH549286A (de) * | 1972-09-06 | 1974-05-15 | Bbc Brown Boveri & Cie | Halbleiterbauelement. |
| JPS5310746B2 (en, 2012) * | 1973-05-11 | 1978-04-15 |
-
1977
- 1977-01-07 US US05/757,554 patent/US4292646A/en not_active Expired - Lifetime
- 1977-12-14 SE SE7714186A patent/SE433276B/xx unknown
- 1977-12-19 IT IT30918/77A patent/IT1088746B/it active
- 1977-12-28 CA CA293,973A patent/CA1080858A/en not_active Expired
- 1977-12-29 GB GB54111/77A patent/GB1562046A/en not_active Expired
- 1977-12-29 DE DE19772758616 patent/DE2758616A1/de not_active Withdrawn
-
1978
- 1978-01-05 JP JP49078A patent/JPS5387184A/ja active Granted
- 1978-01-06 FR FR7800320A patent/FR2377096A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4292646A (en) | 1981-09-29 |
| SE433276B (sv) | 1984-05-14 |
| GB1562046A (en) | 1980-03-05 |
| FR2377096B1 (en, 2012) | 1983-07-08 |
| JPS5751983B2 (en, 2012) | 1982-11-05 |
| SE7714186L (sv) | 1978-07-08 |
| JPS5387184A (en) | 1978-08-01 |
| FR2377096A1 (fr) | 1978-08-04 |
| IT1088746B (it) | 1985-06-10 |
| DE2758616A1 (de) | 1978-07-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |