FR2376513A1 - Dispositif semiconducteur muni d'un film protecteur - Google Patents

Dispositif semiconducteur muni d'un film protecteur

Info

Publication number
FR2376513A1
FR2376513A1 FR7639706A FR7639706A FR2376513A1 FR 2376513 A1 FR2376513 A1 FR 2376513A1 FR 7639706 A FR7639706 A FR 7639706A FR 7639706 A FR7639706 A FR 7639706A FR 2376513 A1 FR2376513 A1 FR 2376513A1
Authority
FR
France
Prior art keywords
protective film
semiconductor device
region
film
device equipped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7639706A
Other languages
English (en)
French (fr)
Other versions
FR2376513B1 (enExample
Inventor
Jacques Lebailly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7639706A priority Critical patent/FR2376513A1/fr
Priority to DE19772756426 priority patent/DE2756426A1/de
Priority to CA293,365A priority patent/CA1098608A/en
Priority to US05/864,331 priority patent/US4207586A/en
Priority to NL7714399A priority patent/NL7714399A/xx
Priority to GB53934/77A priority patent/GB1594246A/en
Priority to JP16098477A priority patent/JPS5391685A/ja
Publication of FR2376513A1 publication Critical patent/FR2376513A1/fr
Application granted granted Critical
Publication of FR2376513B1 publication Critical patent/FR2376513B1/fr
Priority to JP61175822A priority patent/JPS62122183A/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/025—Electric or magnetic properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • H10P14/6334—
    • H10P14/69433—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Lasers (AREA)
FR7639706A 1976-12-31 1976-12-31 Dispositif semiconducteur muni d'un film protecteur Granted FR2376513A1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR7639706A FR2376513A1 (fr) 1976-12-31 1976-12-31 Dispositif semiconducteur muni d'un film protecteur
DE19772756426 DE2756426A1 (de) 1976-12-31 1977-12-17 Halbleiteranordnung mit passivierungsschicht
CA293,365A CA1098608A (en) 1976-12-31 1977-12-19 Semiconductor device having a passivating layer
NL7714399A NL7714399A (nl) 1976-12-31 1977-12-27 Halfgeleiderinrichting met passiveringslaag.
US05/864,331 US4207586A (en) 1976-12-31 1977-12-27 Semiconductor device having a passivating layer
GB53934/77A GB1594246A (en) 1976-12-31 1977-12-28 Semiconductor device having a passivating layer
JP16098477A JPS5391685A (en) 1976-12-31 1977-12-29 Semiconductor
JP61175822A JPS62122183A (ja) 1976-12-31 1986-07-28 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7639706A FR2376513A1 (fr) 1976-12-31 1976-12-31 Dispositif semiconducteur muni d'un film protecteur

Publications (2)

Publication Number Publication Date
FR2376513A1 true FR2376513A1 (fr) 1978-07-28
FR2376513B1 FR2376513B1 (enExample) 1981-10-30

Family

ID=9181792

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7639706A Granted FR2376513A1 (fr) 1976-12-31 1976-12-31 Dispositif semiconducteur muni d'un film protecteur

Country Status (7)

Country Link
US (1) US4207586A (enExample)
JP (2) JPS5391685A (enExample)
CA (1) CA1098608A (enExample)
DE (1) DE2756426A1 (enExample)
FR (1) FR2376513A1 (enExample)
GB (1) GB1594246A (enExample)
NL (1) NL7714399A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022857A4 (en) * 1979-01-30 1982-01-11 Western Electric Co REDUCTION OF THE RECOMBINATION CURRENT ON THE SURFACE IN GaAs DEVICES.
EP0076495A3 (en) * 1981-10-02 1984-12-05 Hitachi, Ltd. Photo-detective semiconductor device
EP0038697B1 (en) * 1980-04-22 1984-12-12 Semiconductor Research Foundation Semiconductor image sensor

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291322A (en) * 1979-07-30 1981-09-22 Bell Telephone Laboratories, Incorporated Structure for shallow junction MOS circuits
JPS56165473A (en) * 1980-05-24 1981-12-19 Semiconductor Res Found Semiconductor pickup device
GB2133928B (en) * 1982-12-04 1986-07-30 Plessey Co Plc Coatings for semiconductor devices
US4860066A (en) * 1987-01-08 1989-08-22 International Business Machines Corporation Semiconductor electro-optical conversion
US5218216A (en) * 1987-01-31 1993-06-08 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
JPH07114237B2 (ja) * 1987-08-26 1995-12-06 株式会社東芝 半導体装置
US4935384A (en) * 1988-12-14 1990-06-19 The United States Of America As Represented By The United States Department Of Energy Method of passivating semiconductor surfaces
JPH02228080A (ja) * 1989-02-28 1990-09-11 Furukawa Electric Co Ltd:The 半導体受光素子
JPH0327577A (ja) * 1989-06-23 1991-02-05 イーストマン・コダックジャパン株式会社 発光ダイオ―ドアレイ
US5112409A (en) * 1991-01-23 1992-05-12 Solarex Corporation Solar cells with reduced recombination under grid lines, and method of manufacturing same
CA2070708C (en) * 1991-08-08 1997-04-29 Ichiro Kasai Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface
JP4221818B2 (ja) * 1999-05-28 2009-02-12 沖電気工業株式会社 光半導体素子の製造方法
DE10024473B4 (de) * 2000-05-18 2007-04-19 Vishay Semiconductor Gmbh Optischer Empfänger
AU2002307129A1 (en) * 2001-04-03 2002-10-21 Carnegie Mellon University Electronic circuit device, system and method
TWM307906U (en) * 2006-06-05 2007-03-11 Hon Hai Prec Ind Co Ltd Electrical connector
US20120312361A1 (en) * 2011-06-08 2012-12-13 International Business Machines Corporation Emitter structure and fabrication method for silicon heterojunction solar cell
US9153717B2 (en) * 2013-08-09 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Backside illuminated photo-sensitive device with gradated buffer layer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1184178B (de) * 1960-02-20 1964-12-23 Standard Elektrik Lorenz Ag Verfahren zum Stabilisieren der Oberflaeche von Halbleiterkoerpern mit pn-UEbergaengen durch Vakuumbedampfen
GB1111991A (en) * 1965-02-25 1968-05-01 Nat Res Dev Method of passivation of pn junction devices
JPS502235B1 (enExample) * 1970-09-07 1975-01-24
US3723201A (en) * 1971-11-01 1973-03-27 Motorola Inc Diffusion process for heteroepitaxial germanium device fabrication utilizing polycrystalline silicon mask
FR2270753B1 (enExample) * 1974-05-09 1977-10-21 Radiotechnique Compelec
CA1023835A (en) * 1974-07-08 1978-01-03 Tadao Nakamura Light emitting gallium phosphide device
FR2281650A1 (fr) * 1974-08-06 1976-03-05 Telecommunications Sa Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede
JPS5824951B2 (ja) * 1974-10-09 1983-05-24 ソニー株式会社 コウガクソウチ
JPS51121263A (en) * 1975-04-17 1976-10-23 Sony Corp Method of manufacturing a semiconductor divice
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
US4121238A (en) * 1977-02-16 1978-10-17 Bell Telephone Laboratories, Incorporated Metal oxide/indium phosphide devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022857A4 (en) * 1979-01-30 1982-01-11 Western Electric Co REDUCTION OF THE RECOMBINATION CURRENT ON THE SURFACE IN GaAs DEVICES.
EP0038697B1 (en) * 1980-04-22 1984-12-12 Semiconductor Research Foundation Semiconductor image sensor
EP0076495A3 (en) * 1981-10-02 1984-12-05 Hitachi, Ltd. Photo-detective semiconductor device

Also Published As

Publication number Publication date
DE2756426A1 (de) 1978-07-13
US4207586A (en) 1980-06-10
JPS6327851B2 (enExample) 1988-06-06
JPS5391685A (en) 1978-08-11
NL7714399A (nl) 1978-07-04
JPS62122183A (ja) 1987-06-03
GB1594246A (en) 1981-07-30
CA1098608A (en) 1981-03-31
FR2376513B1 (enExample) 1981-10-30

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