FR2339251A1 - Procede pour le depot de revetements protecteurs sur des substrats semi-conducteurs - Google Patents

Procede pour le depot de revetements protecteurs sur des substrats semi-conducteurs

Info

Publication number
FR2339251A1
FR2339251A1 FR7701539A FR7701539A FR2339251A1 FR 2339251 A1 FR2339251 A1 FR 2339251A1 FR 7701539 A FR7701539 A FR 7701539A FR 7701539 A FR7701539 A FR 7701539A FR 2339251 A1 FR2339251 A1 FR 2339251A1
Authority
FR
France
Prior art keywords
gas
glow discharge
substrates
silicon nitride
flow reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7701539A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/651,556 external-priority patent/US4142004A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2339251A1 publication Critical patent/FR2339251A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
FR7701539A 1976-01-22 1977-01-20 Procede pour le depot de revetements protecteurs sur des substrats semi-conducteurs Withdrawn FR2339251A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65155776A 1976-01-22 1976-01-22
US05/651,556 US4142004A (en) 1976-01-22 1976-01-22 Method of coating semiconductor substrates

Publications (1)

Publication Number Publication Date
FR2339251A1 true FR2339251A1 (fr) 1977-08-19

Family

ID=27096092

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7701539A Withdrawn FR2339251A1 (fr) 1976-01-22 1977-01-20 Procede pour le depot de revetements protecteurs sur des substrats semi-conducteurs

Country Status (7)

Country Link
JP (1) JPS52115785A (sv)
DE (1) DE2702165A1 (sv)
ES (1) ES455227A1 (sv)
FR (1) FR2339251A1 (sv)
IT (1) IT1075610B (sv)
NL (1) NL7700641A (sv)
SE (1) SE7700229L (sv)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995029269A1 (fr) * 1994-04-22 1995-11-02 Innovatique S.A. Procede pour la nitruration a basse pression d'une piece metallique et four pour la mise en ×uvre dudit procede
FR2725015A1 (fr) * 1994-09-23 1996-03-29 Innovatique Sa Four utilisable pour la nitruration a basse pression d'une piece metallique

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54128283A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Manufacture of semiconductor device
JPS5643731A (en) * 1979-09-17 1981-04-22 Mitsubishi Electric Corp Film forming method
JPS5687353A (en) * 1979-12-18 1981-07-15 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor integrated circuit device
JPS5745931A (en) * 1980-09-04 1982-03-16 Fujitsu Ltd Semiconductor device with multilayer passivation film and manufacture thereof
JPS57141935A (en) * 1981-02-25 1982-09-02 Nec Corp Manufacture of semiconductor device
JPS58131733A (ja) * 1982-01-29 1983-08-05 Toshiba Corp 半導体装置
DE3272669D1 (en) * 1982-03-18 1986-09-25 Ibm Deutschland Plasma-reactor and its use in etching and coating substrates
JPS598341A (ja) * 1982-07-06 1984-01-17 Toshiba Corp 半導体装置
JPS5994848A (ja) * 1982-11-24 1984-05-31 Fuji Electric Co Ltd 半導体装置の製造方法
US4513684A (en) * 1982-12-22 1985-04-30 Energy Conversion Devices, Inc. Upstream cathode assembly
US4455351A (en) * 1983-06-13 1984-06-19 At&T Bell Laboratories Preparation of photodiodes
JPS61128403A (ja) * 1984-11-28 1986-06-16 鐘淵化学工業株式会社 非単結晶状シリコン系絶縁材料
US4618541A (en) * 1984-12-21 1986-10-21 Advanced Micro Devices, Inc. Method of forming a silicon nitride film transparent to ultraviolet radiation and resulting article
JPS61284928A (ja) * 1985-06-10 1986-12-15 Mitsubishi Electric Corp 半導体装置
JPH084109B2 (ja) * 1987-08-18 1996-01-17 富士通株式会社 半導体装置およびその製造方法
JP6146160B2 (ja) * 2013-06-26 2017-06-14 東京エレクトロン株式会社 成膜方法、記憶媒体及び成膜装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995029269A1 (fr) * 1994-04-22 1995-11-02 Innovatique S.A. Procede pour la nitruration a basse pression d'une piece metallique et four pour la mise en ×uvre dudit procede
FR2725015A1 (fr) * 1994-09-23 1996-03-29 Innovatique Sa Four utilisable pour la nitruration a basse pression d'une piece metallique

Also Published As

Publication number Publication date
DE2702165A1 (de) 1977-07-28
SE7700229L (sv) 1977-07-23
IT1075610B (it) 1985-04-22
NL7700641A (nl) 1977-07-26
ES455227A1 (es) 1978-04-16
JPS52115785A (en) 1977-09-28

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Legal Events

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