FR2328291A1 - Transistor a effet de champ pour hyperfrequences - Google Patents

Transistor a effet de champ pour hyperfrequences

Info

Publication number
FR2328291A1
FR2328291A1 FR7631182A FR7631182A FR2328291A1 FR 2328291 A1 FR2328291 A1 FR 2328291A1 FR 7631182 A FR7631182 A FR 7631182A FR 7631182 A FR7631182 A FR 7631182A FR 2328291 A1 FR2328291 A1 FR 2328291A1
Authority
FR
France
Prior art keywords
electrodes
length
arms
hyperfrequencies
lateral arms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7631182A
Other languages
English (en)
French (fr)
Other versions
FR2328291B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Government
Original Assignee
UK Government
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB42825/75A external-priority patent/GB1568055A/en
Application filed by UK Government filed Critical UK Government
Publication of FR2328291A1 publication Critical patent/FR2328291A1/fr
Application granted granted Critical
Publication of FR2328291B1 publication Critical patent/FR2328291B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/875—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having thin-film semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Waveguide Connection Structure (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR7631182A 1975-10-17 1976-10-15 Transistor a effet de champ pour hyperfrequences Granted FR2328291A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB42825/75A GB1568055A (en) 1975-10-17 1975-10-17 Field-effect transistors
GB1444776 1976-04-08

Publications (2)

Publication Number Publication Date
FR2328291A1 true FR2328291A1 (fr) 1977-05-13
FR2328291B1 FR2328291B1 (enExample) 1982-11-12

Family

ID=26250574

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7631182A Granted FR2328291A1 (fr) 1975-10-17 1976-10-15 Transistor a effet de champ pour hyperfrequences

Country Status (2)

Country Link
JP (1) JPS6032987B2 (enExample)
FR (1) FR2328291A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0081396A3 (en) * 1981-12-04 1985-11-13 National Aeronautics And Space Administration Microwave field effect transistor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5047829A (en) * 1986-10-30 1991-09-10 Texas Instruments Incorporated Monolithic p-i-n diode limiter
WO2018155668A1 (ja) 2017-02-27 2018-08-30 パナソニックＩｐマネジメント株式会社 高周波用トランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0081396A3 (en) * 1981-12-04 1985-11-13 National Aeronautics And Space Administration Microwave field effect transistor

Also Published As

Publication number Publication date
FR2328291B1 (enExample) 1982-11-12
JPS6032987B2 (ja) 1985-07-31
JPS5250172A (en) 1977-04-21

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Legal Events

Date Code Title Description
ST Notification of lapse