JPS5276886A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5276886A
JPS5276886A JP50153548A JP15354875A JPS5276886A JP S5276886 A JPS5276886 A JP S5276886A JP 50153548 A JP50153548 A JP 50153548A JP 15354875 A JP15354875 A JP 15354875A JP S5276886 A JPS5276886 A JP S5276886A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
memory
conductors
integration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50153548A
Other languages
Japanese (ja)
Other versions
JPS5549780B2 (en
Inventor
Akira Takei
Yoshiiku Togei
Yoshihiko Higa
Takashi Mitsuida
Hideo Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50153548A priority Critical patent/JPS5276886A/en
Publication of JPS5276886A publication Critical patent/JPS5276886A/en
Publication of JPS5549780B2 publication Critical patent/JPS5549780B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To improve the degree of integration by following procedure, that the electrodes forming the memory are arranged at both sides of input and output conductors, and two electrode forming the memory are set between these conductors, so number of conductor and channel stop are to be a few against the same number of memory elements.
JP50153548A 1975-12-23 1975-12-23 Semiconductor memory device Granted JPS5276886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50153548A JPS5276886A (en) 1975-12-23 1975-12-23 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50153548A JPS5276886A (en) 1975-12-23 1975-12-23 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5276886A true JPS5276886A (en) 1977-06-28
JPS5549780B2 JPS5549780B2 (en) 1980-12-13

Family

ID=15564906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50153548A Granted JPS5276886A (en) 1975-12-23 1975-12-23 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5276886A (en)

Also Published As

Publication number Publication date
JPS5549780B2 (en) 1980-12-13

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