JPS6032987B2 - 電界効果トランジスタに関する改良 - Google Patents
電界効果トランジスタに関する改良Info
- Publication number
- JPS6032987B2 JPS6032987B2 JP51124746A JP12474676A JPS6032987B2 JP S6032987 B2 JPS6032987 B2 JP S6032987B2 JP 51124746 A JP51124746 A JP 51124746A JP 12474676 A JP12474676 A JP 12474676A JP S6032987 B2 JPS6032987 B2 JP S6032987B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gate
- transmission line
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
- H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
- H10D30/875—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having thin-film semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Waveguide Connection Structure (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB42825/75A GB1568055A (en) | 1975-10-17 | 1975-10-17 | Field-effect transistors |
| GB42825 | 1975-10-17 | ||
| GB14447 | 1976-04-08 | ||
| GB1444776 | 1976-04-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5250172A JPS5250172A (en) | 1977-04-21 |
| JPS6032987B2 true JPS6032987B2 (ja) | 1985-07-31 |
Family
ID=26250574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51124746A Expired JPS6032987B2 (ja) | 1975-10-17 | 1976-10-18 | 電界効果トランジスタに関する改良 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS6032987B2 (enExample) |
| FR (1) | FR2328291A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10756165B2 (en) | 2017-02-27 | 2020-08-25 | Panasonic Semiconductor Solutions Co., Ltd. | High-frequency transistor |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1200017A (en) * | 1981-12-04 | 1986-01-28 | Ho C. Huang | Microwave field effect transistor |
| US5047829A (en) * | 1986-10-30 | 1991-09-10 | Texas Instruments Incorporated | Monolithic p-i-n diode limiter |
-
1976
- 1976-10-15 FR FR7631182A patent/FR2328291A1/fr active Granted
- 1976-10-18 JP JP51124746A patent/JPS6032987B2/ja not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10756165B2 (en) | 2017-02-27 | 2020-08-25 | Panasonic Semiconductor Solutions Co., Ltd. | High-frequency transistor |
| US11195904B2 (en) | 2017-02-27 | 2021-12-07 | Nuvoton Technology Corporation Japan | High-frequency transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2328291B1 (enExample) | 1982-11-12 |
| FR2328291A1 (fr) | 1977-05-13 |
| JPS5250172A (en) | 1977-04-21 |
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