JPS6032987B2 - 電界効果トランジスタに関する改良 - Google Patents

電界効果トランジスタに関する改良

Info

Publication number
JPS6032987B2
JPS6032987B2 JP51124746A JP12474676A JPS6032987B2 JP S6032987 B2 JPS6032987 B2 JP S6032987B2 JP 51124746 A JP51124746 A JP 51124746A JP 12474676 A JP12474676 A JP 12474676A JP S6032987 B2 JPS6032987 B2 JP S6032987B2
Authority
JP
Japan
Prior art keywords
electrode
gate
transmission line
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51124746A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5250172A (en
Inventor
ウオルター グレイ ケネス
デヴイツド リーズ ハウ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB42825/75A external-priority patent/GB1568055A/en
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Publication of JPS5250172A publication Critical patent/JPS5250172A/ja
Publication of JPS6032987B2 publication Critical patent/JPS6032987B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • H10D30/87FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • H10D30/87FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/873FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • H10D30/87FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/875FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having thin-film semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311Gate electrodes for field-effect devices
    • H10D64/411Gate electrodes for field-effect devices for FETs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Waveguide Connection Structure (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP51124746A 1975-10-17 1976-10-18 電界効果トランジスタに関する改良 Expired JPS6032987B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB42825/75A GB1568055A (en) 1975-10-17 1975-10-17 Field-effect transistors
GB42825 1975-10-17
GB14447 1976-04-08
GB1444776 1976-04-08

Publications (2)

Publication Number Publication Date
JPS5250172A JPS5250172A (en) 1977-04-21
JPS6032987B2 true JPS6032987B2 (ja) 1985-07-31

Family

ID=26250574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51124746A Expired JPS6032987B2 (ja) 1975-10-17 1976-10-18 電界効果トランジスタに関する改良

Country Status (2)

Country Link
JP (1) JPS6032987B2 (enExample)
FR (1) FR2328291A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10756165B2 (en) 2017-02-27 2020-08-25 Panasonic Semiconductor Solutions Co., Ltd. High-frequency transistor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1200017A (en) * 1981-12-04 1986-01-28 Ho C. Huang Microwave field effect transistor
US5047829A (en) * 1986-10-30 1991-09-10 Texas Instruments Incorporated Monolithic p-i-n diode limiter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10756165B2 (en) 2017-02-27 2020-08-25 Panasonic Semiconductor Solutions Co., Ltd. High-frequency transistor
US11195904B2 (en) 2017-02-27 2021-12-07 Nuvoton Technology Corporation Japan High-frequency transistor

Also Published As

Publication number Publication date
FR2328291B1 (enExample) 1982-11-12
FR2328291A1 (fr) 1977-05-13
JPS5250172A (en) 1977-04-21

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