FR2328291A1 - Transistor a effet de champ pour hyperfrequences - Google Patents
Transistor a effet de champ pour hyperfrequencesInfo
- Publication number
- FR2328291A1 FR2328291A1 FR7631182A FR7631182A FR2328291A1 FR 2328291 A1 FR2328291 A1 FR 2328291A1 FR 7631182 A FR7631182 A FR 7631182A FR 7631182 A FR7631182 A FR 7631182A FR 2328291 A1 FR2328291 A1 FR 2328291A1
- Authority
- FR
- France
- Prior art keywords
- electrodes
- transmission line
- working
- shaped gate
- gate over
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005540 biological transmission Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8126—Thin film MESFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Waveguide Connection Structure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB42825/75A GB1568055A (en) | 1975-10-17 | 1975-10-17 | Field-effect transistors |
GB1444776 | 1976-04-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2328291A1 true FR2328291A1 (fr) | 1977-05-13 |
FR2328291B1 FR2328291B1 (fr) | 1982-11-12 |
Family
ID=26250574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7631182A Granted FR2328291A1 (fr) | 1975-10-17 | 1976-10-15 | Transistor a effet de champ pour hyperfrequences |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS6032987B2 (fr) |
FR (1) | FR2328291A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0081396A2 (fr) * | 1981-12-04 | 1983-06-15 | National Aeronautics And Space Administration | Transistor à effet de champ à hyperfréquences |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5047829A (en) * | 1986-10-30 | 1991-09-10 | Texas Instruments Incorporated | Monolithic p-i-n diode limiter |
JP6604495B2 (ja) | 2017-02-27 | 2019-11-13 | パナソニックIpマネジメント株式会社 | 高周波用トランジスタ |
-
1976
- 1976-10-15 FR FR7631182A patent/FR2328291A1/fr active Granted
- 1976-10-18 JP JP12474676A patent/JPS6032987B2/ja not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0081396A2 (fr) * | 1981-12-04 | 1983-06-15 | National Aeronautics And Space Administration | Transistor à effet de champ à hyperfréquences |
EP0081396A3 (fr) * | 1981-12-04 | 1985-11-13 | National Aeronautics And Space Administration | Transistor à effet de champ à hyperfréquences |
Also Published As
Publication number | Publication date |
---|---|
FR2328291B1 (fr) | 1982-11-12 |
JPS6032987B2 (ja) | 1985-07-31 |
JPS5250172A (en) | 1977-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1415944A (en) | Charge transfer devices | |
IT1133908B (it) | Elemento di riscaldamento,comprendente un polimero condutore in forma di lamina interposto tra un paio di elettrodi flessibili,specialmente per uso in articoli per isolare e/o sigillare | |
FR2328291A1 (fr) | Transistor a effet de champ pour hyperfrequences | |
JPS51114074A (en) | Insulation gate type field effect transistor | |
IT1034781B (it) | Morsetto componibile epr morsettiere per derivazioni elettriche | |
IT7922223A0 (it) | Metodo per fabbricare tale conduttore elettrico comportante conduttore. una carica induttiva continua e | |
IT973746B (it) | Metodo per realizzare un contatto elettrico tra elettrodi e contatto cosi ottenuto per apparecchi tele visivi | |
JPS5351474A (en) | Method of forming electrode on insulating substrate | |
JPS5255476A (en) | Semiconductor device | |
DE2860611D1 (en) | Process for the generation of windows having stepped edges within material layers of insulating material or of material for electrodes for the production of an integrated semiconductor circuit and mis field-effect transistor with short channel length produced by this process | |
JPS5437284A (en) | Manufacturing process of insulated wire of rectanglar and flat shape | |
JPS52114285A (en) | Mis type semiconductor device | |
JPS5215273A (en) | Semiconductor device | |
ES468041A1 (es) | Unos perfeccionamientos en la fabricacion de condensadores electricos. | |
JPS53135582A (en) | Semiconductor device and its manufacture | |
JPS5276886A (en) | Semiconductor memory device | |
JPS5259010A (en) | Equipment for continuous annealing of wire rod | |
JPS52129279A (en) | Production of semiconductor device | |
JPS5351961A (en) | Crossover insulating construction of conductors arranged on substrate | |
JPS53127275A (en) | Planar type field effect transistor | |
GB1454928A (en) | Charge coupled devices | |
JPS51148378A (en) | Manufacturing method of insulation gate type electric field effect tra nsistor | |
JPS5381085A (en) | Production of semiconductor device | |
JPS52124876A (en) | Insulated gate type field effect semiconductor | |
GB986672A (en) | Improvements in high frequency circuit units |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |