GB1454928A - Charge coupled devices - Google Patents

Charge coupled devices

Info

Publication number
GB1454928A
GB1454928A GB3343274A GB3343274A GB1454928A GB 1454928 A GB1454928 A GB 1454928A GB 3343274 A GB3343274 A GB 3343274A GB 3343274 A GB3343274 A GB 3343274A GB 1454928 A GB1454928 A GB 1454928A
Authority
GB
United Kingdom
Prior art keywords
electrodes
insulating
forming
ridges
spaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3343274A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Space and Mission Systems Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Publication of GB1454928A publication Critical patent/GB1454928A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

1454928 Charge coupled devices TRW Inc 29 July 1974 [1 Aug 1973] 33432/74 Heading H1K A two-phase charge coupled device is made by forming a ridged insulating structure on a semiconductor substrate 10, Fig. 6, the structure comprising an insulating film 16 and insulating ridges 18 cf width and spacing W, forming, using a mask, a first set of electrodes 22 having a width and spacing W and offset relative to the ridges 18 so as to overlap them by substantially half, forming insulation 24 over the electrodes 22, and forming a second set of electrodes 28, Fig. 11, either as a continuous layer or as spaced layers partially overlapping the insulated first set of electrodes 22, the spaces 27 between the ridges 18 and the electrodes 22 of the first set being treated prior to formation of the second set of electrodes 28 so that the potential wells under the two sets of electrodes 22, 28 have an asymmetry in the same direction. The treatment may include ion implantation through the spaces 27 and/or growth of an insulating layer 24 in the spaces 27 so as to form asymmetrical electrodes 28. The charge propagation path is formed as a serpentine channel (14), Fig. 1 (not shown) in a thick insulating layer (12) on the substrate 10, the electrodes 22 being mutually staggered in adjacent limbs of the channel (14). The substrate 10 may be Si, the insulating layers 18, 24 silicon nitride and silicon oxide respectively and the electrodes 22, 28 Si and Al respectively. Reference has been directed by the Comptroller to Specifications 1,340,620 and 1,376,640.
GB3343274A 1973-08-01 1974-07-29 Charge coupled devices Expired GB1454928A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38460173A 1973-08-01 1973-08-01

Publications (1)

Publication Number Publication Date
GB1454928A true GB1454928A (en) 1976-11-10

Family

ID=23517968

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3343274A Expired GB1454928A (en) 1973-08-01 1974-07-29 Charge coupled devices

Country Status (5)

Country Link
JP (1) JPS5034783A (en)
DE (1) DE2437106A1 (en)
FR (1) FR2280975A1 (en)
GB (1) GB1454928A (en)
NL (1) NL7409793A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1101993A (en) * 1976-04-15 1981-05-26 Kunihiro Tanikawa Charge coupled device
IT1091869B (en) * 1977-04-11 1985-07-06 Rca Corp CHARGING COUPLING STRUCTURE

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1075811A (en) * 1970-10-29 1980-04-15 George E. Smith Charge coupled device

Also Published As

Publication number Publication date
FR2280975B1 (en) 1978-11-24
JPS5034783A (en) 1975-04-03
NL7409793A (en) 1975-02-04
DE2437106A1 (en) 1975-07-24
FR2280975A1 (en) 1976-02-27

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee