FR2280975A1 - LOAD COUPLING DEVICE WITH ASYMMETRICAL POTENTIAL POTENTIAL - Google Patents
LOAD COUPLING DEVICE WITH ASYMMETRICAL POTENTIAL POTENTIALInfo
- Publication number
- FR2280975A1 FR2280975A1 FR7426792A FR7426792A FR2280975A1 FR 2280975 A1 FR2280975 A1 FR 2280975A1 FR 7426792 A FR7426792 A FR 7426792A FR 7426792 A FR7426792 A FR 7426792A FR 2280975 A1 FR2280975 A1 FR 2280975A1
- Authority
- FR
- France
- Prior art keywords
- potential
- coupling device
- asymmetrical
- load coupling
- load
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008878 coupling Effects 0.000 title 1
- 238000010168 coupling process Methods 0.000 title 1
- 238000005859 coupling reaction Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38460173A | 1973-08-01 | 1973-08-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2280975A1 true FR2280975A1 (en) | 1976-02-27 |
FR2280975B1 FR2280975B1 (en) | 1978-11-24 |
Family
ID=23517968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7426792A Granted FR2280975A1 (en) | 1973-08-01 | 1974-08-01 | LOAD COUPLING DEVICE WITH ASYMMETRICAL POTENTIAL POTENTIAL |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5034783A (en) |
DE (1) | DE2437106A1 (en) |
FR (1) | FR2280975A1 (en) |
GB (1) | GB1454928A (en) |
NL (1) | NL7409793A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1101993A (en) * | 1976-04-15 | 1981-05-26 | Kunihiro Tanikawa | Charge coupled device |
IT1091869B (en) * | 1977-04-11 | 1985-07-06 | Rca Corp | CHARGING COUPLING STRUCTURE |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2111924A1 (en) * | 1970-10-29 | 1972-06-09 | Western Electric Co |
-
1974
- 1974-07-19 NL NL7409793A patent/NL7409793A/en not_active Application Discontinuation
- 1974-07-29 GB GB3343274A patent/GB1454928A/en not_active Expired
- 1974-08-01 DE DE19742437106 patent/DE2437106A1/en not_active Withdrawn
- 1974-08-01 FR FR7426792A patent/FR2280975A1/en active Granted
- 1974-08-01 JP JP8758174A patent/JPS5034783A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2111924A1 (en) * | 1970-10-29 | 1972-06-09 | Western Electric Co |
Non-Patent Citations (3)
Title |
---|
*REVUE US "THE BELL SYSTEM TECHNICAL JOURNAL", VOLUME 51, NO8, OCTOBRE 1972 : "A DOPED SURFACE TWO-PHASE CCD", R.H. KRAMBECK : PAGES 1849-1866) * |
PAGE 1234 * |
REVUE US "I.B.M. TECHNICAL DISCLOSURE BULLETIN" VOLUME 14, NO4, SEPTEMBRE 1971 : "UNIDIRECTIONAL CHARGE-COUPLED SHIFT REGISTER", N.G. ANATHA ET AL. * |
Also Published As
Publication number | Publication date |
---|---|
FR2280975B1 (en) | 1978-11-24 |
GB1454928A (en) | 1976-11-10 |
DE2437106A1 (en) | 1975-07-24 |
JPS5034783A (en) | 1975-04-03 |
NL7409793A (en) | 1975-02-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |