FR2253274A1 - Application of aluminium based alloy on silicon - without diffusing the aluminium into the silicon - Google Patents
Application of aluminium based alloy on silicon - without diffusing the aluminium into the siliconInfo
- Publication number
- FR2253274A1 FR2253274A1 FR7342841A FR7342841A FR2253274A1 FR 2253274 A1 FR2253274 A1 FR 2253274A1 FR 7342841 A FR7342841 A FR 7342841A FR 7342841 A FR7342841 A FR 7342841A FR 2253274 A1 FR2253274 A1 FR 2253274A1
- Authority
- FR
- France
- Prior art keywords
- silicon
- aluminium
- active surface
- diffusing
- application
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02161—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Conducting layers based on Al are formed on at least one active surface of a device comprising a semiconductor substrate obtd. by the planar method, are made by first forming an electrically insulating layer except in the contact forming zones, then simultaneously depositing over the whole active surface a layer of Al/Si alloy contg. at least a third metal selected from Fe, Cr, Mg, Cu, Mn and/or Ni, then covering the active surface with a mask inert to anodisation at the regions where contacts and interconnection are to be formed and finally anodising to oxidise the unprotected parts of the alloy coating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7342841A FR2253274A1 (en) | 1973-11-30 | 1973-11-30 | Application of aluminium based alloy on silicon - without diffusing the aluminium into the silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7342841A FR2253274A1 (en) | 1973-11-30 | 1973-11-30 | Application of aluminium based alloy on silicon - without diffusing the aluminium into the silicon |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2253274A1 true FR2253274A1 (en) | 1975-06-27 |
FR2253274B1 FR2253274B1 (en) | 1978-07-07 |
Family
ID=9128555
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7342841A Granted FR2253274A1 (en) | 1973-11-30 | 1973-11-30 | Application of aluminium based alloy on silicon - without diffusing the aluminium into the silicon |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2253274A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393703A (en) * | 1993-11-12 | 1995-02-28 | Motorola, Inc. | Process for forming a conductive layer for semiconductor devices |
-
1973
- 1973-11-30 FR FR7342841A patent/FR2253274A1/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393703A (en) * | 1993-11-12 | 1995-02-28 | Motorola, Inc. | Process for forming a conductive layer for semiconductor devices |
US5623166A (en) * | 1993-11-12 | 1997-04-22 | Motorola, Inc. | Al-Ni-Cr conductive layer for semiconductor devices |
Also Published As
Publication number | Publication date |
---|---|
FR2253274B1 (en) | 1978-07-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3478171D1 (en) | A method of producing a layered structure | |
US3237271A (en) | Method of fabricating semiconductor devices | |
GB1418969A (en) | Method of making integrated circuits | |
FR2253274A1 (en) | Application of aluminium based alloy on silicon - without diffusing the aluminium into the silicon | |
JPS5640260A (en) | Manufacture of semiconductor device | |
JPS5618463A (en) | Manufacture of semiconductor device | |
JPS55151334A (en) | Fabricating method of semiconductor device | |
JPS56147434A (en) | Manufacture of semiconductor device | |
JPS564248A (en) | Semiconductor device | |
JPS5759369A (en) | Conductor coated heat resisting silver | |
FR2253275A1 (en) | Application of aluminium layer on semiconducting substrate - by coating first with metallic diffusion barrier | |
JPS57170524A (en) | Manufacture of semiconductor device | |
JPS52117063A (en) | Preparation of ohmic ontact layer in semiconductor device | |
JPS57124429A (en) | Manufacture of semiconductor device | |
JPS56162873A (en) | Insulated gate type field effect semiconductor device | |
GB1258158A (en) | ||
JPS5766671A (en) | Semiconductor device | |
JPS5660033A (en) | Manufacture of semiconductor device | |
JPS56129349A (en) | Method of manufacturing airtight terminal | |
JPS55107258A (en) | Electrode construction for semiconductor element | |
FR2241143A1 (en) | Semiconductor device with cct. element(s) with connecting points - has free areas of main and side surfaces coated with metal film | |
JPS5637674A (en) | Manufacture of semiconductor device | |
JPS5662337A (en) | Production of wiring and electrode | |
JPS6027147A (en) | Semiconductor device and manufacture thereof | |
JPS56160052A (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |