FR1179416A - Jonction d'un métal à des semi-conducteurs par thermo-compression - Google Patents

Jonction d'un métal à des semi-conducteurs par thermo-compression

Info

Publication number
FR1179416A
FR1179416A FR1179416DA FR1179416A FR 1179416 A FR1179416 A FR 1179416A FR 1179416D A FR1179416D A FR 1179416DA FR 1179416 A FR1179416 A FR 1179416A
Authority
FR
France
Prior art keywords
gold
aluminium
press
mil
oct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1179416A publication Critical patent/FR1179416A/fr
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H10P95/50—
    • H10W70/69—
    • H10W72/071—
    • H10W76/18—
    • H10W76/60—
    • H10W99/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45605—Gallium (Ga) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45609—Indium (In) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/4562—Antimony (Sb) as principal constituent
    • H10W72/0711—
    • H10W72/07118—
    • H10W72/07532—
    • H10W72/522—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/5449—
    • H10W72/552—
    • H10W72/5522—
    • H10W72/5524—
    • H10W72/5525—
    • H10W72/555—
    • H10W72/59—
    • H10W72/932—
    • H10W72/952—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/903—Metal to nonmetal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor

Landscapes

  • Die Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
FR1179416D 1956-10-31 1957-06-12 Jonction d'un métal à des semi-conducteurs par thermo-compression Expired FR1179416A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US619639A US3006067A (en) 1956-10-31 1956-10-31 Thermo-compression bonding of metal to semiconductors, and the like

Publications (1)

Publication Number Publication Date
FR1179416A true FR1179416A (fr) 1959-05-25

Family

ID=24482720

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1179416D Expired FR1179416A (fr) 1956-10-31 1957-06-12 Jonction d'un métal à des semi-conducteurs par thermo-compression

Country Status (7)

Country Link
US (1) US3006067A (enExample)
BE (1) BE559732A (enExample)
CH (1) CH351342A (enExample)
DE (1) DE1127000C2 (enExample)
FR (1) FR1179416A (enExample)
GB (2) GB881832A (enExample)
NL (2) NL219101A (enExample)

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US3131459A (en) * 1959-11-09 1964-05-05 Corning Glass Works Method of bonding absorbing material to a delay line
US3131460A (en) * 1959-11-09 1964-05-05 Corning Glass Works Method of bonding a crystal to a delay line
US3136050A (en) * 1959-11-17 1964-06-09 Texas Instruments Inc Container closure method
US3179785A (en) * 1960-09-20 1965-04-20 Hughes Aircraft Co Apparatus for thermo-compression bonding
US3125803A (en) * 1960-10-24 1964-03-24 Terminals
NL270517A (enExample) * 1960-11-16
NL275554A (enExample) * 1961-04-19 1900-01-01
DE1172378B (de) * 1961-07-14 1964-06-18 Siemens Ag Verfahren zur Herstellung einer elektrisch unsymmetrisch leitenden Halbleiteranordnung
NL281360A (enExample) * 1961-07-26 1900-01-01
BE621898A (enExample) * 1961-08-30 1900-01-01
NL283249A (enExample) * 1961-09-19 1900-01-01
DE1251871B (enExample) * 1962-02-06 1900-01-01
NL292051A (enExample) * 1962-04-27
US3217401A (en) * 1962-06-08 1965-11-16 Transitron Electronic Corp Method of attaching metallic heads to silicon layers of semiconductor devices
US3271625A (en) * 1962-08-01 1966-09-06 Signetics Corp Electronic package assembly
US3304595A (en) * 1962-11-26 1967-02-21 Nippon Electric Co Method of making a conductive connection to a semiconductor device electrode
US3356914A (en) * 1963-05-03 1967-12-05 Westinghouse Electric Corp Integrated semiconductor rectifier assembly
US3296692A (en) * 1963-09-13 1967-01-10 Bell Telephone Labor Inc Thermocompression wire attachments to quartz crystals
US3310858A (en) * 1963-12-12 1967-03-28 Bell Telephone Labor Inc Semiconductor diode and method of making
US3370207A (en) * 1964-02-24 1968-02-20 Gen Electric Multilayer contact system for semiconductor devices including gold and copper layers
US3286340A (en) * 1964-02-28 1966-11-22 Philco Corp Fabrication of semiconductor units
GB1106163A (en) * 1964-03-02 1968-03-13 Post Office Improvements in or relating to the bonding of metals to semiconductor, metallic or non-metallic surfaces
DE1282190B (de) * 1964-03-12 1968-11-07 Kabusihiki Kaisha Hitachi Seis Verfahren zum Herstellen von Transistoren
DE1514304A1 (de) * 1964-04-03 1969-05-14 Philco Ford Corp Halbleiteranordnung und Herstellungsverfahren hierfuer
US3362064A (en) * 1964-05-08 1968-01-09 Space Sciences Inc Measuring device
US3380155A (en) * 1965-05-12 1968-04-30 Sprague Electric Co Production of contact pads for semiconductors
US3373481A (en) * 1965-06-22 1968-03-19 Sperry Rand Corp Method of electrically interconnecting conductors
US3442003A (en) * 1965-07-26 1969-05-06 Teledyne Inc Method for interconnecting thin films
US3461542A (en) * 1966-01-06 1969-08-19 Western Electric Co Bonding leads to quartz crystals
US3523222A (en) * 1966-09-15 1970-08-04 Texas Instruments Inc Semiconductive contacts
US3465421A (en) * 1966-12-20 1969-09-09 American Standard Inc High temperature bonding to germanium
US3442007A (en) * 1966-12-29 1969-05-06 Kewanee Oil Co Process of attaching a collector grid to a photovoltaic cell
US3483610A (en) * 1967-06-08 1969-12-16 Bell Telephone Labor Inc Thermocompression bonding of foil leads
GB1256518A (enExample) * 1968-11-30 1971-12-08
US3623649A (en) * 1969-06-09 1971-11-30 Gen Motors Corp Wedge bonding tool for the attachment of semiconductor leads
US3641660A (en) * 1969-06-30 1972-02-15 Texas Instruments Inc The method of ball bonding with an automatic semiconductor bonding machine
US3754674A (en) * 1970-03-03 1973-08-28 Allis Chalmers Mfg Co Means for providing hermetic seals
US4402447A (en) * 1980-12-04 1983-09-06 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Joining lead wires to thin platinum alloy films
DE3104960A1 (de) * 1981-02-12 1982-08-26 W.C. Heraeus Gmbh, 6450 Hanau "feinstdraht"
US4441118A (en) * 1983-01-13 1984-04-03 Olin Corporation Composite copper nickel alloys with improved solderability shelf life
FR2555813B1 (fr) * 1983-09-28 1986-06-20 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif
GB2175009B (en) * 1985-03-27 1990-02-07 Mitsubishi Metal Corp Wire for bonding a semiconductor device and process for producing the same
GB2178761B (en) * 1985-03-29 1989-09-20 Mitsubishi Metal Corp Wire for bonding a semiconductor device
GB8818050D0 (en) * 1988-07-28 1988-09-01 Lilliwyte Sa Joining of ceramic components to metal components
US20020053734A1 (en) 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US7073254B2 (en) 1993-11-16 2006-07-11 Formfactor, Inc. Method for mounting a plurality of spring contact elements
US5495667A (en) * 1994-11-07 1996-03-05 Micron Technology, Inc. Method for forming contact pins for semiconductor dice and interconnects
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US5994152A (en) * 1996-02-21 1999-11-30 Formfactor, Inc. Fabricating interconnects and tips using sacrificial substrates
JP2001034187A (ja) * 1999-07-22 2001-02-09 Nec Corp 熱圧着装置および熱圧着方法
DE10333465B4 (de) * 2003-07-22 2008-07-24 Infineon Technologies Ag Elektronisches Bauteil mit Halbleiterchip, Verfahren zur Herstellung desselben sowie Verfahren zur Herstellung eines Halbleiterwafers mit Kontaktflecken
JP4710700B2 (ja) * 2005-05-09 2011-06-29 株式会社デンソー 半導体装置およびその製造方法
US8381965B2 (en) 2010-07-22 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal compress bonding
US8104666B1 (en) 2010-09-01 2012-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal compressive bonding with separate die-attach and reflow processes
US9485873B2 (en) 2013-03-15 2016-11-01 Lawrence Livermore National Security, Llc Depositing bulk or micro-scale electrodes
US20160380120A1 (en) 2015-06-26 2016-12-29 Akira Terao Metallization and stringing for back-contact solar cells

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US2564738A (en) * 1947-02-25 1951-08-21 Foerderung Forschung Gmbh Method of forming a vacuum-tight bond between ceramics and metals
US2671746A (en) * 1950-06-17 1954-03-09 Richard D Brew & Company Inc Bonding system
GB688866A (en) * 1950-10-19 1953-03-18 Gen Electric Co Ltd Improvements in or relating to crystal rectifiers
US2698548A (en) * 1950-10-31 1955-01-04 Gen Electric Co Ltd Method of pressure welding
NL91691C (enExample) * 1952-02-07
US2739369A (en) * 1952-03-28 1956-03-27 Metals & Controls Corp Method of making electrical contacts
DE1049980B (de) * 1952-08-07 1959-02-05 International Standard Electric Corporation, New York, N. Y. (V. St A.) Verfahren zur Herstellung von Halbleiteranordnungen mit mindestens einer Nadelelektrode
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US2805370A (en) * 1956-04-26 1957-09-03 Bell Telephone Labor Inc Alloyed connections to semiconductors

Also Published As

Publication number Publication date
NL219101A (enExample) 1900-01-01
DE1127000C2 (de) 1974-04-11
BE559732A (enExample) 1900-01-01
US3006067A (en) 1961-10-31
DE1127000B (enExample) 1974-04-11
GB881834A (en) 1961-11-08
CH351342A (fr) 1961-01-15
NL113327C (enExample) 1900-01-01
GB881832A (en) 1961-11-08

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