FR1038658A - Dispositif semi-conducteur pour la transmission de signaux - Google Patents

Dispositif semi-conducteur pour la transmission de signaux

Info

Publication number
FR1038658A
FR1038658A FR1038658DA FR1038658A FR 1038658 A FR1038658 A FR 1038658A FR 1038658D A FR1038658D A FR 1038658DA FR 1038658 A FR1038658 A FR 1038658A
Authority
FR
France
Prior art keywords
germanium
electrode
type
sept
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US184870A external-priority patent/US2950425A/en
Priority claimed from US184869A external-priority patent/US2792538A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1038658A publication Critical patent/FR1038658A/fr
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1038658D 1950-09-14 1951-03-29 Dispositif semi-conducteur pour la transmission de signaux Expired FR1038658A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US184870A US2950425A (en) 1950-09-14 1950-09-14 Semiconductor signal translating devices
US184869A US2792538A (en) 1950-09-14 1950-09-14 Semiconductor translating devices with embedded electrode

Publications (1)

Publication Number Publication Date
FR1038658A true FR1038658A (fr) 1953-09-30

Family

ID=26880550

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1038658D Expired FR1038658A (fr) 1950-09-14 1951-03-29 Dispositif semi-conducteur pour la transmission de signaux

Country Status (6)

Country Link
BE (1) BE505814A (fr)
CH (1) CH302296A (fr)
DE (1) DE977615C (fr)
FR (1) FR1038658A (fr)
GB (1) GB759012A (fr)
NL (2) NL162993B (fr)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1027323B (de) * 1954-12-02 1958-04-03 Siemens Ag Flaechentransistor und Verfahren zur Herstellung
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
DE1032408B (de) * 1954-06-21 1958-06-19 Siemens Ag Verfahren zur Herstellung von p-n-UEbergaengen nach dem Legierungs- bzw. Diffusionsverfahren
US2845375A (en) * 1956-06-11 1958-07-29 Itt Method for making fused junction semiconductor devices
US2846626A (en) * 1954-07-28 1958-08-05 Raytheon Mfg Co Junction transistors and methods of forming them
US2847336A (en) * 1956-01-30 1958-08-12 Rca Corp Processing semiconductor devices
US2856320A (en) * 1955-09-08 1958-10-14 Ibm Method of making transistor with welded collector
US2862160A (en) * 1955-10-18 1958-11-25 Hoffmann Electronics Corp Light sensitive device and method of making the same
US2885608A (en) * 1954-12-03 1959-05-05 Philco Corp Semiconductive device and method of manufacture
US2885571A (en) * 1953-12-02 1959-05-05 Philco Corp Semiconductor device
US2894862A (en) * 1952-06-02 1959-07-14 Rca Corp Method of fabricating p-n type junction devices
DE1063277B (de) * 1954-08-23 1959-08-13 Gen Electric Co Ltd Verfahren zur Herstellung eines Halbleiters mit Legierungselektroden
US2916408A (en) * 1956-03-29 1959-12-08 Raytheon Co Fabrication of junction transistors
US2927222A (en) * 1955-05-27 1960-03-01 Philco Corp Polarizing semiconductive apparatus
DE1080695B (de) * 1953-12-23 1960-04-28 Philips Nv Verfahren zur Herstellung eines Elektrodensystems mit einem halbleitenden Koerper und mindestens einer Legierungselektrode
US2941131A (en) * 1955-05-13 1960-06-14 Philco Corp Semiconductive apparatus
DE1085613B (de) * 1956-05-15 1960-07-21 Siemens Ag Verfahren zur grossflaechigen Kontaktierung eines einkristallinen Siliziumkoerpers
DE1094371B (de) * 1955-07-21 1960-12-08 Philips Nv Verfahren zur Herstellung einer Legierungselektrode auf einem aus Germanium bestehenden halbleitenden Koerper
DE1100818B (de) * 1958-09-24 1961-03-02 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit einem einkristallinen scheiben-foermigen Grundkoerper aus Silizium
DE1107343B (de) * 1954-10-14 1961-05-25 Licentia Gmbh Verfahren zum Herstellen von elektrischen Halbleiteranordnungen
DE1109270B (de) * 1954-04-07 1961-06-22 Standard Elektrik Lorenz Ag Verfahren zum Anschmelzen einer Stromzufuehrung an eine Legierungs-elektrode einer Halbleiteranordnung
DE1178519B (de) * 1953-12-31 1964-09-24 Philips Nv Verfahren zur Herstellung von Halbleiter-bauelementen durch das Aufschmelzen einer kleinen Menge Elektrodenmaterials auf einen halbleitenden Koerper

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE977596C (de) * 1952-03-13 1967-08-03 Siemens Ag Verfahren zur Herstellung eines Flaechen-p-n-Gleichrichters oder Flaechen-Transistors
BE542380A (fr) * 1954-10-29
US3001895A (en) * 1957-06-06 1961-09-26 Ibm Semiconductor devices and method of making same
US3525146A (en) * 1965-12-11 1970-08-25 Sanyo Electric Co Method of making semiconductor devices having crystal extensions for leads

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE518421C (de) * 1927-02-12 1931-10-03 Kurt Brodowski Verfahren zur Herstellung von Gleichrichtern fuer Wechselstrom
GB342643A (en) * 1929-07-11 1931-02-05 British Thomson Houston Co Ltd Improvements relating to electric rectifiers
US2504628A (en) * 1946-03-23 1950-04-18 Purdue Research Foundation Electrical device with germanium alloys
NL85857C (fr) * 1948-02-26
NL84061C (fr) * 1948-06-26
NL89623C (fr) * 1949-04-01
DE840418C (de) * 1949-05-30 1952-06-05 Licentia Gmbh Verfahren zum Herstellen Stoerstellen enthaltender Halbleiter, insbesondere fuer Trockengleichrichter
DE968911C (de) * 1949-06-14 1958-04-10 Licentia Gmbh Elektrisch steuerbarer Trockengleichrichter und Verfahren zu seiner Herstellung
DE976468C (de) * 1949-08-15 1963-09-19 Licentia Gmbh Verfahren zum Herstellen eines UEberschusshalbleiters aus einem Defekthalbleiter

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2894862A (en) * 1952-06-02 1959-07-14 Rca Corp Method of fabricating p-n type junction devices
US2885571A (en) * 1953-12-02 1959-05-05 Philco Corp Semiconductor device
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Also Published As

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NL90092C (fr) 1900-01-01
GB759012A (en) 1956-10-10
DE977615C (de) 1967-08-31
CH302296A (de) 1954-10-15
BE505814A (fr) 1900-01-01
NL162993B (nl)

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