GB759012A - Semiconductor electric signal translating devices and methods of making them - Google Patents

Semiconductor electric signal translating devices and methods of making them

Info

Publication number
GB759012A
GB759012A GB2163451A GB2163451A GB759012A GB 759012 A GB759012 A GB 759012A GB 2163451 A GB2163451 A GB 2163451A GB 2163451 A GB2163451 A GB 2163451A GB 759012 A GB759012 A GB 759012A
Authority
GB
United Kingdom
Prior art keywords
germanium
electrode
type
sept
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2163451A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US184870A external-priority patent/US2950425A/en
Priority claimed from US184869A external-priority patent/US2792538A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB759012A publication Critical patent/GB759012A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
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    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
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    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
GB2163451A 1950-09-14 1951-09-14 Semiconductor electric signal translating devices and methods of making them Expired GB759012A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US184870A US2950425A (en) 1950-09-14 1950-09-14 Semiconductor signal translating devices
US184869A US2792538A (en) 1950-09-14 1950-09-14 Semiconductor translating devices with embedded electrode

Publications (1)

Publication Number Publication Date
GB759012A true GB759012A (en) 1956-10-10

Family

ID=26880550

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2163451A Expired GB759012A (en) 1950-09-14 1951-09-14 Semiconductor electric signal translating devices and methods of making them

Country Status (6)

Country Link
BE (1) BE505814A (fr)
CH (1) CH302296A (fr)
DE (1) DE977615C (fr)
FR (1) FR1038658A (fr)
GB (1) GB759012A (fr)
NL (2) NL90092C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3525146A (en) * 1965-12-11 1970-08-25 Sanyo Electric Co Method of making semiconductor devices having crystal extensions for leads

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE977596C (de) * 1952-03-13 1967-08-03 Siemens Ag Verfahren zur Herstellung eines Flaechen-p-n-Gleichrichters oder Flaechen-Transistors
NL178757B (nl) * 1952-06-02 British Steel Corp Werkwijze en inrichting voor het continu produceren van een metaalstrook uit metaalpoeder.
GB805292A (en) * 1953-12-02 1958-12-03 Philco Corp Semiconductor devices
NL91360C (fr) * 1953-12-23
CA563722A (fr) * 1953-12-31 1958-09-23 N.V. Philips Gloeilampenfabrieken Electrodes de jonction de semi-conducteur et methode
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
DE1109270B (de) * 1954-04-07 1961-06-22 Standard Elektrik Lorenz Ag Verfahren zum Anschmelzen einer Stromzufuehrung an eine Legierungs-elektrode einer Halbleiteranordnung
DE1032408B (de) * 1954-06-21 1958-06-19 Siemens Ag Verfahren zur Herstellung von p-n-UEbergaengen nach dem Legierungs- bzw. Diffusionsverfahren
US2846626A (en) * 1954-07-28 1958-08-05 Raytheon Mfg Co Junction transistors and methods of forming them
BE541624A (fr) * 1954-08-23 1900-01-01
DE1107343B (de) * 1954-10-14 1961-05-25 Licentia Gmbh Verfahren zum Herstellen von elektrischen Halbleiteranordnungen
NL103256C (fr) * 1954-10-29
DE1027323B (de) * 1954-12-02 1958-04-03 Siemens Ag Flaechentransistor und Verfahren zur Herstellung
US2885608A (en) * 1954-12-03 1959-05-05 Philco Corp Semiconductive device and method of manufacture
US2941131A (en) * 1955-05-13 1960-06-14 Philco Corp Semiconductive apparatus
US2927222A (en) * 1955-05-27 1960-03-01 Philco Corp Polarizing semiconductive apparatus
NL199100A (fr) * 1955-07-21
US2856320A (en) * 1955-09-08 1958-10-14 Ibm Method of making transistor with welded collector
US2862160A (en) * 1955-10-18 1958-11-25 Hoffmann Electronics Corp Light sensitive device and method of making the same
US2847336A (en) * 1956-01-30 1958-08-12 Rca Corp Processing semiconductor devices
US2916408A (en) * 1956-03-29 1959-12-08 Raytheon Co Fabrication of junction transistors
NL231940A (fr) * 1956-05-15
US2845375A (en) * 1956-06-11 1958-07-29 Itt Method for making fused junction semiconductor devices
US3001895A (en) * 1957-06-06 1961-09-26 Ibm Semiconductor devices and method of making same
DE1100818B (de) * 1958-09-24 1961-03-02 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit einem einkristallinen scheiben-foermigen Grundkoerper aus Silizium

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE518421C (de) * 1927-02-12 1931-10-03 Kurt Brodowski Verfahren zur Herstellung von Gleichrichtern fuer Wechselstrom
GB342643A (en) * 1929-07-11 1931-02-05 British Thomson Houston Co Ltd Improvements relating to electric rectifiers
US2504628A (en) * 1946-03-23 1950-04-18 Purdue Research Foundation Electrical device with germanium alloys
NL84054C (fr) * 1948-02-26
NL84061C (fr) * 1948-06-26
NL89623C (fr) * 1949-04-01
DE840418C (de) * 1949-05-30 1952-06-05 Licentia Gmbh Verfahren zum Herstellen Stoerstellen enthaltender Halbleiter, insbesondere fuer Trockengleichrichter
DE968911C (de) * 1949-06-14 1958-04-10 Licentia Gmbh Elektrisch steuerbarer Trockengleichrichter und Verfahren zu seiner Herstellung
DE976468C (de) * 1949-08-15 1963-09-19 Licentia Gmbh Verfahren zum Herstellen eines UEberschusshalbleiters aus einem Defekthalbleiter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3525146A (en) * 1965-12-11 1970-08-25 Sanyo Electric Co Method of making semiconductor devices having crystal extensions for leads

Also Published As

Publication number Publication date
DE977615C (de) 1967-08-31
FR1038658A (fr) 1953-09-30
CH302296A (de) 1954-10-15
BE505814A (fr) 1900-01-01
NL162993B (nl)
NL90092C (fr) 1900-01-01

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