GB1003482A - Improvements in and relating to methods of joining a metal conductor to a semiconduct or body - Google Patents

Improvements in and relating to methods of joining a metal conductor to a semiconduct or body

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Publication number
GB1003482A
GB1003482A GB45389/62A GB4538962A GB1003482A GB 1003482 A GB1003482 A GB 1003482A GB 45389/62 A GB45389/62 A GB 45389/62A GB 4538962 A GB4538962 A GB 4538962A GB 1003482 A GB1003482 A GB 1003482A
Authority
GB
United Kingdom
Prior art keywords
conductor
bond
heated
silicone resin
joining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB45389/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1003482A publication Critical patent/GB1003482A/en
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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Abstract

1,003,482. Equi-conductor devices. PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES Ltd. Nov. 30, 1962 [Dec. 4, 1961], No. 45389/62. Heading H1K. A method of joining a conductor to a semiconductor body comprises , forming a thermocompression bond between them and then surrounding the joint with a rigid material and heating the assembly to at least the eutectic temperature of the combination of the conductor and semi-conductor materials to effect a final alloying process. A semi-conductor wafer, comprising a P-type germanium body 1 with a circular N-type layer 4, the body being soldered, 3, to a nickel plate 4, is produced as described in Specification 1,002,845. The wafer is then heated to 200‹ C. and an aluminium wire is pressed on to the N-type layer 2, using a sapphire head, to form a thermo--compression bond 13. A drop 12 of silicone resin is applied to the bond and when it has hardened the assembly is heated to the eutectic temperature of germanium and aluminium, 424‹ C., for 1 second to affect a final alloying process for the emitter region formed by the bond. A gold wire 15 is similarly bonded at 16 to the layer 2 to form an ohmic base contact which is then supported by a drop 17 of silicone resin and heated to 356‹ C. When the temperatures required for the final alloying processes are higher than that at which the resin can be used, a mixture of alumina, ethylglycol, butanol and nitro-cellulose may be used to support the joints during the heating process and is then removed and replaced by a silicone resin which has better electrical properties.
GB45389/62A 1961-12-04 1962-11-30 Improvements in and relating to methods of joining a metal conductor to a semiconduct or body Expired GB1003482A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BE487257 1961-12-04

Publications (1)

Publication Number Publication Date
GB1003482A true GB1003482A (en) 1965-09-02

Family

ID=3844623

Family Applications (1)

Application Number Title Priority Date Filing Date
GB45389/62A Expired GB1003482A (en) 1961-12-04 1962-11-30 Improvements in and relating to methods of joining a metal conductor to a semiconduct or body

Country Status (4)

Country Link
AT (1) AT239854B (en)
FR (1) FR1340092A (en)
GB (1) GB1003482A (en)
NL (1) NL286149A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005112961A (en) * 2003-10-07 2005-04-28 Shin Etsu Chem Co Ltd Curable organopolysiloxane composition and semiconductor apparatus
JP2010095730A (en) * 2010-01-18 2010-04-30 Shin-Etsu Chemical Co Ltd Curable organopolysiloxane composition and semiconductor apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3641524A1 (en) * 1985-12-10 1987-06-11 Mitsubishi Electric Corp Method of fabricating a semiconductor component
JPH0817189B2 (en) * 1989-01-13 1996-02-21 三菱電機株式会社 Method for manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005112961A (en) * 2003-10-07 2005-04-28 Shin Etsu Chem Co Ltd Curable organopolysiloxane composition and semiconductor apparatus
JP4551074B2 (en) * 2003-10-07 2010-09-22 信越化学工業株式会社 Curable organopolysiloxane composition and semiconductor device
JP2010095730A (en) * 2010-01-18 2010-04-30 Shin-Etsu Chemical Co Ltd Curable organopolysiloxane composition and semiconductor apparatus

Also Published As

Publication number Publication date
NL286149A (en) 1900-01-01
AT239854B (en) 1965-04-26
FR1340092A (en) 1963-10-11

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