FI20041479A0 - Muunnettu puolijohdeajautumisilmaisin - Google Patents

Muunnettu puolijohdeajautumisilmaisin

Info

Publication number
FI20041479A0
FI20041479A0 FI20041479A FI20041479A FI20041479A0 FI 20041479 A0 FI20041479 A0 FI 20041479A0 FI 20041479 A FI20041479 A FI 20041479A FI 20041479 A FI20041479 A FI 20041479A FI 20041479 A0 FI20041479 A0 FI 20041479A0
Authority
FI
Finland
Prior art keywords
operation detector
modified semiconductor
semiconductor operation
modified
detector
Prior art date
Application number
FI20041479A
Other languages
English (en)
Swedish (sv)
Other versions
FI20041479A (fi
Inventor
Artto Aurola
Original Assignee
Artto Aurola
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Artto Aurola filed Critical Artto Aurola
Priority to FI20041479A priority Critical patent/FI20041479A/fi
Publication of FI20041479A0 publication Critical patent/FI20041479A0/fi
Priority to EP05774699A priority patent/EP1790011A4/en
Priority to KR1020077003995A priority patent/KR101143346B1/ko
Priority to EP14197959.1A priority patent/EP2950346A3/en
Priority to CA2577198A priority patent/CA2577198C/en
Priority to JP2007526477A priority patent/JP5081621B2/ja
Priority to PCT/FI2005/000359 priority patent/WO2006018477A1/en
Priority to MX2007002133A priority patent/MX2007002133A/es
Priority to BRPI0514449-3A priority patent/BRPI0514449B1/pt
Priority to RU2007104786/28A priority patent/RU2376678C2/ru
Priority to AU2005273818A priority patent/AU2005273818B2/en
Priority to US11/660,562 priority patent/US7816653B2/en
Priority to PCT/FI2005/000488 priority patent/WO2006053938A1/en
Publication of FI20041479A publication Critical patent/FI20041479A/fi
Priority to IL181187A priority patent/IL181187A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14654Blooming suppression
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/24Measuring radiation intensity with semiconductor detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/24Measuring radiation intensity with semiconductor detectors
    • G01T1/241Electrode arrangements, e.g. continuous or parallel strips or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14806Structural or functional details thereof
    • H01L27/14812Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14887Blooming suppression
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FI20041479A 2004-08-20 2004-11-17 Muunnettu puolijohdeajautumisilmaisin FI20041479A (fi)

Priority Applications (14)

Application Number Priority Date Filing Date Title
FI20041479A FI20041479A (fi) 2004-11-17 2004-11-17 Muunnettu puolijohdeajautumisilmaisin
US11/660,562 US7816653B2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
PCT/FI2005/000359 WO2006018477A1 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
BRPI0514449-3A BRPI0514449B1 (pt) 2004-08-20 2005-08-22 Radiation semiconductor detector with modified internal door structure
EP14197959.1A EP2950346A3 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
CA2577198A CA2577198C (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
JP2007526477A JP5081621B2 (ja) 2004-08-20 2005-08-22 改変内部ゲート構造を用いた半導体放射線検出器
EP05774699A EP1790011A4 (en) 2004-08-20 2005-08-22 SEMICONDUCTOR RADIATION DETECTOR WITH MODIFIED INTERNAL GRID STRUCTURE
MX2007002133A MX2007002133A (es) 2004-08-20 2005-08-22 Detector de radiacion de semiconductor con una estructura de compuerta interna modificada.
KR1020077003995A KR101143346B1 (ko) 2004-08-20 2005-08-22 변형 내부 게이트 구조를 갖는 반도체 방사선 검출기
RU2007104786/28A RU2376678C2 (ru) 2004-08-20 2005-08-22 Полупроводниковый детектор излучения с модифицированной структурой внутреннего затвора
AU2005273818A AU2005273818B2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
PCT/FI2005/000488 WO2006053938A1 (en) 2004-11-17 2005-11-16 Modified semiconductor drift detector
IL181187A IL181187A (en) 2004-08-20 2007-02-06 Semiconductor radiation detector with an internal gate structure adapted to the radiation detection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20041479A FI20041479A (fi) 2004-11-17 2004-11-17 Muunnettu puolijohdeajautumisilmaisin

Publications (2)

Publication Number Publication Date
FI20041479A0 true FI20041479A0 (fi) 2004-11-17
FI20041479A FI20041479A (fi) 2006-05-05

Family

ID=33515238

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20041479A FI20041479A (fi) 2004-08-20 2004-11-17 Muunnettu puolijohdeajautumisilmaisin

Country Status (3)

Country Link
BR (1) BRPI0514449B1 (fi)
FI (1) FI20041479A (fi)
WO (1) WO2006053938A1 (fi)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2446429A (en) 2006-12-08 2008-08-13 E2V Tech Photosensor with variable sensing area
RU2015110023A (ru) * 2012-08-23 2016-10-10 Конинклейке Филипс Н.В. Полупроводниковые детекторы счета фотонов
US9123837B2 (en) * 2013-05-31 2015-09-01 Oxford Instruments Analytical Oy Semiconductor detector with radiation shield
CN111373288A (zh) * 2017-12-15 2020-07-03 株式会社堀场制作所 硅漂移型放射线检测元件、硅漂移型放射线检测器和放射线检测装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8900343A (nl) * 1989-02-13 1990-09-03 Univ Delft Tech Plaatsgevoelige stralingsdetector.
DE10213812B4 (de) * 2002-03-27 2007-03-29 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Leitungsüberführung für einen Halbleiter-Detektor
DE10260229B3 (de) * 2002-12-20 2005-08-18 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiter-Detektor mit optimiertem Strahlungseintrittsfenster

Also Published As

Publication number Publication date
FI20041479A (fi) 2006-05-05
BRPI0514449B1 (pt) 2017-11-14
WO2006053938A1 (en) 2006-05-26
BRPI0514449A (pt) 2008-06-10

Similar Documents

Publication Publication Date Title
DE102005024684A8 (de) Halbleitervorrichtung
DE602005024280D1 (de) Objektdetektor
DE602006019639D1 (de) Nichtflüchtige halbleiterspeicheranordnung
DE602005020968D1 (de) n dafür
DE502005008677D1 (de) Bestrahlungseinrichtung
DE602005023972D1 (de) Vereinfachte wafer-ausrichtung
DE60317905D1 (de) Halbleiterbauelement
DE602005022149D1 (de) Halbleiter-Beschleunigungsaufnehmer
DE602005009127D1 (de) Siliziumverbindung
DE602004028430D1 (de) Halbleiter
FI20050836A (fi) Röntgenlaite
DE602006012106D1 (de) Halbleiteranordnung
DE112005003806A5 (de) Halbleiterlaservorrichtung
DE602005008550D1 (de) Halbleiterspeicher
DE602005012797D1 (de) Halbleiterelement
DE602005021554D1 (de) Integrierte halbleiterschaltung
DE602006017413D1 (de) Siliciumcarbid-halbleiteranordnung
DE602004008869D1 (de) Leckdetektor
FI20051236A0 (fi) Puolijohde apparaatti
FI20055057A0 (fi) Puolijohdelaite
DE602005007878D1 (de) Halbleiterspeicher
DE60327718D1 (de) Halbleiterbauelement
DE602006016949D1 (de) Halbleiterbauelement
FI20041479A0 (fi) Muunnettu puolijohdeajautumisilmaisin
DE602005024528D1 (de) Halbleitervorrichtung

Legal Events

Date Code Title Description
MA Patent expired