FI20041479A0 - Modified semiconductor operation detector - Google Patents

Modified semiconductor operation detector

Info

Publication number
FI20041479A0
FI20041479A0 FI20041479A FI20041479A FI20041479A0 FI 20041479 A0 FI20041479 A0 FI 20041479A0 FI 20041479 A FI20041479 A FI 20041479A FI 20041479 A FI20041479 A FI 20041479A FI 20041479 A0 FI20041479 A0 FI 20041479A0
Authority
FI
Finland
Prior art keywords
operation detector
modified semiconductor
semiconductor operation
modified
detector
Prior art date
Application number
FI20041479A
Other languages
Finnish (fi)
Swedish (sv)
Other versions
FI20041479A (en
Inventor
Artto Aurola
Original Assignee
Artto Aurola
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Artto Aurola filed Critical Artto Aurola
Priority to FI20041479A priority Critical patent/FI20041479A/en
Publication of FI20041479A0 publication Critical patent/FI20041479A0/en
Priority to RU2007104786/28A priority patent/RU2376678C2/en
Priority to EP14197959.1A priority patent/EP2950346A3/en
Priority to AU2005273818A priority patent/AU2005273818B2/en
Priority to PCT/FI2005/000359 priority patent/WO2006018477A1/en
Priority to US11/660,562 priority patent/US7816653B2/en
Priority to MX2007002133A priority patent/MX2007002133A/en
Priority to EP05774699A priority patent/EP1790011A4/en
Priority to KR1020077003995A priority patent/KR101143346B1/en
Priority to BRPI0514449-3A priority patent/BRPI0514449B1/en
Priority to JP2007526477A priority patent/JP5081621B2/en
Priority to CA2577198A priority patent/CA2577198C/en
Priority to PCT/FI2005/000488 priority patent/WO2006053938A1/en
Publication of FI20041479A publication Critical patent/FI20041479A/en
Priority to IL181187A priority patent/IL181187A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
FI20041479A 2004-08-20 2004-11-17 Modified semiconductor behavior indicator FI20041479A (en)

Priority Applications (14)

Application Number Priority Date Filing Date Title
FI20041479A FI20041479A (en) 2004-11-17 2004-11-17 Modified semiconductor behavior indicator
CA2577198A CA2577198C (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
MX2007002133A MX2007002133A (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure.
KR1020077003995A KR101143346B1 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
AU2005273818A AU2005273818B2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
PCT/FI2005/000359 WO2006018477A1 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
US11/660,562 US7816653B2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
RU2007104786/28A RU2376678C2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with modified internal gate structure
EP05774699A EP1790011A4 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
EP14197959.1A EP2950346A3 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
BRPI0514449-3A BRPI0514449B1 (en) 2004-08-20 2005-08-22 RADIATION SEMICONDUCTOR DETECTOR WITH MODIFIED INTERNAL DOOR STRUCTURE
JP2007526477A JP5081621B2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector using a modified internal gate structure.
PCT/FI2005/000488 WO2006053938A1 (en) 2004-11-17 2005-11-16 Modified semiconductor drift detector
IL181187A IL181187A (en) 2004-08-20 2007-02-06 Semiconductor radiation detector with a modified internal gate structure and method for detecting the radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20041479A FI20041479A (en) 2004-11-17 2004-11-17 Modified semiconductor behavior indicator

Publications (2)

Publication Number Publication Date
FI20041479A0 true FI20041479A0 (en) 2004-11-17
FI20041479A FI20041479A (en) 2006-05-05

Family

ID=33515238

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20041479A FI20041479A (en) 2004-08-20 2004-11-17 Modified semiconductor behavior indicator

Country Status (3)

Country Link
BR (1) BRPI0514449B1 (en)
FI (1) FI20041479A (en)
WO (1) WO2006053938A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2446429A (en) 2006-12-08 2008-08-13 E2V Tech Photosensor with variable sensing area
JP6563810B2 (en) * 2012-08-23 2019-08-21 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Semiconductor device, radiation detector and manufacturing method
US9123837B2 (en) * 2013-05-31 2015-09-01 Oxford Instruments Analytical Oy Semiconductor detector with radiation shield
CN111373288A (en) * 2017-12-15 2020-07-03 株式会社堀场制作所 Silicon drift type radiation detection element, silicon drift type radiation detector, and radiation detection device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8900343A (en) * 1989-02-13 1990-09-03 Univ Delft Tech PLACE SENSITIVE RADIATION DETECTOR.
DE10213812B4 (en) * 2002-03-27 2007-03-29 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Cable transfer for a semiconductor detector
DE10260229B3 (en) * 2002-12-20 2005-08-18 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Semiconductor detector with optimized radiation entrance window

Also Published As

Publication number Publication date
WO2006053938A1 (en) 2006-05-26
BRPI0514449B1 (en) 2017-11-14
FI20041479A (en) 2006-05-05
BRPI0514449A (en) 2008-06-10

Similar Documents

Publication Publication Date Title
DE102005024684A8 (en) Semiconductor device
DE602005024280D1 (en) OBJECT DETECTOR
DE602006019639D1 (en) NON-VOLATILE SEMICONDUCTOR ARRANGEMENT
DE602005020968D1 (en) n for that
DE502005008677D1 (en) RADIATION DEVICE
DE602005023972D1 (en) SIMPLIFIED WAFER ALIGNMENT
DE60317905D1 (en) SEMICONDUCTOR COMPONENT
DE602005022149D1 (en) Semiconductor accelerometer
DE602005009127D1 (en) silicon compound
DE602004028430D1 (en) semiconductor
FI20050836A (en) X-ray
DE602006012106D1 (en) A semiconductor device
DE112005003806A5 (en) Semiconductor laser device
DE602005008550D1 (en) Semiconductor memory
DE602005012797D1 (en) Semiconductor element
DE602005021554D1 (en) INTEGRATED SEMICONDUCTOR SWITCHING
DE602006017413D1 (en) SILICON CARBIDE SEMICONDUCTOR DEVICE
DE602004008869D1 (en) leak detector
FI20051236A0 (en) Semiconductor gadget
FI20055057A0 (en) semiconductor device
DE602005007878D1 (en) Semiconductor memory
DE60327718D1 (en) SEMICONDUCTOR COMPONENT
DE602006016949D1 (en) SEMICONDUCTOR COMPONENT
FI20041479A0 (en) Modified semiconductor operation detector
DE602005024528D1 (en) SEMICONDUCTOR DEVICE

Legal Events

Date Code Title Description
MA Patent expired