FI20041479A - Modified semiconductor behavior indicator - Google Patents

Modified semiconductor behavior indicator Download PDF

Info

Publication number
FI20041479A
FI20041479A FI20041479A FI20041479A FI20041479A FI 20041479 A FI20041479 A FI 20041479A FI 20041479 A FI20041479 A FI 20041479A FI 20041479 A FI20041479 A FI 20041479A FI 20041479 A FI20041479 A FI 20041479A
Authority
FI
Finland
Prior art keywords
modified semiconductor
behavior indicator
semiconductor behavior
indicator
modified
Prior art date
Application number
FI20041479A
Other languages
Finnish (fi)
Swedish (sv)
Other versions
FI20041479A0 (en
Inventor
Artto Aurola
Original Assignee
Artto Aurola
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Artto Aurola filed Critical Artto Aurola
Priority to FI20041479A priority Critical patent/FI20041479A/en
Publication of FI20041479A0 publication Critical patent/FI20041479A0/en
Priority to US11/660,562 priority patent/US7816653B2/en
Priority to PCT/FI2005/000359 priority patent/WO2006018477A1/en
Priority to RU2007104786/28A priority patent/RU2376678C2/en
Priority to BRPI0514449-3A priority patent/BRPI0514449B1/en
Priority to MX2007002133A priority patent/MX2007002133A/en
Priority to AU2005273818A priority patent/AU2005273818B2/en
Priority to KR1020077003995A priority patent/KR101143346B1/en
Priority to JP2007526477A priority patent/JP5081621B2/en
Priority to CA2577198A priority patent/CA2577198C/en
Priority to EP14197959.1A priority patent/EP2950346A3/en
Priority to EP05774699A priority patent/EP1790011A4/en
Priority to PCT/FI2005/000488 priority patent/WO2006053938A1/en
Publication of FI20041479A publication Critical patent/FI20041479A/en
Priority to IL181187A priority patent/IL181187A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FI20041479A 2004-08-20 2004-11-17 Modified semiconductor behavior indicator FI20041479A (en)

Priority Applications (14)

Application Number Priority Date Filing Date Title
FI20041479A FI20041479A (en) 2004-11-17 2004-11-17 Modified semiconductor behavior indicator
EP05774699A EP1790011A4 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
AU2005273818A AU2005273818B2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
JP2007526477A JP5081621B2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector using a modified internal gate structure.
RU2007104786/28A RU2376678C2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with modified internal gate structure
BRPI0514449-3A BRPI0514449B1 (en) 2004-08-20 2005-08-22 RADIATION SEMICONDUCTOR DETECTOR WITH MODIFIED INTERNAL DOOR STRUCTURE
MX2007002133A MX2007002133A (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure.
US11/660,562 US7816653B2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
KR1020077003995A KR101143346B1 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
PCT/FI2005/000359 WO2006018477A1 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
CA2577198A CA2577198C (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
EP14197959.1A EP2950346A3 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
PCT/FI2005/000488 WO2006053938A1 (en) 2004-11-17 2005-11-16 Modified semiconductor drift detector
IL181187A IL181187A (en) 2004-08-20 2007-02-06 Semiconductor radiation detector with a modified internal gate structure and method for detecting the radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20041479A FI20041479A (en) 2004-11-17 2004-11-17 Modified semiconductor behavior indicator

Publications (2)

Publication Number Publication Date
FI20041479A0 FI20041479A0 (en) 2004-11-17
FI20041479A true FI20041479A (en) 2006-05-05

Family

ID=33515238

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20041479A FI20041479A (en) 2004-08-20 2004-11-17 Modified semiconductor behavior indicator

Country Status (3)

Country Link
BR (1) BRPI0514449B1 (en)
FI (1) FI20041479A (en)
WO (1) WO2006053938A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2446429A (en) 2006-12-08 2008-08-13 E2V Tech Photosensor with variable sensing area
US9608157B2 (en) * 2012-08-23 2017-03-28 Koninklijke Philips N.V. Photon counting semiconductor detectors
US9123837B2 (en) * 2013-05-31 2015-09-01 Oxford Instruments Analytical Oy Semiconductor detector with radiation shield
JP7197506B2 (en) * 2017-12-15 2022-12-27 株式会社堀場製作所 SILICON DRIFT RADIATION DETECTION ELEMENT, SILICON DRIFT RADIATION DETECTOR AND RADIATION DETECTION DEVICE

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8900343A (en) * 1989-02-13 1990-09-03 Univ Delft Tech PLACE SENSITIVE RADIATION DETECTOR.
DE10213812B4 (en) * 2002-03-27 2007-03-29 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Cable transfer for a semiconductor detector
DE10260229B3 (en) * 2002-12-20 2005-08-18 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Semiconductor detector with optimized radiation entrance window

Also Published As

Publication number Publication date
WO2006053938A1 (en) 2006-05-26
BRPI0514449B1 (en) 2017-11-14
FI20041479A0 (en) 2004-11-17
BRPI0514449A (en) 2008-06-10

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