FI20041479A - Modifierad halvledar-driftdetektor - Google Patents

Modifierad halvledar-driftdetektor Download PDF

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Publication number
FI20041479A
FI20041479A FI20041479A FI20041479A FI20041479A FI 20041479 A FI20041479 A FI 20041479A FI 20041479 A FI20041479 A FI 20041479A FI 20041479 A FI20041479 A FI 20041479A FI 20041479 A FI20041479 A FI 20041479A
Authority
FI
Finland
Prior art keywords
modified semiconductor
behavior indicator
semiconductor behavior
indicator
modified
Prior art date
Application number
FI20041479A
Other languages
English (en)
Finnish (fi)
Other versions
FI20041479A0 (sv
Inventor
Artto Aurola
Original Assignee
Artto Aurola
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Artto Aurola filed Critical Artto Aurola
Priority to FI20041479A priority Critical patent/FI20041479A/sv
Publication of FI20041479A0 publication Critical patent/FI20041479A0/sv
Priority to RU2007104786/28A priority patent/RU2376678C2/ru
Priority to EP14197959.1A priority patent/EP2950346A3/en
Priority to AU2005273818A priority patent/AU2005273818B2/en
Priority to PCT/FI2005/000359 priority patent/WO2006018477A1/en
Priority to US11/660,562 priority patent/US7816653B2/en
Priority to MX2007002133A priority patent/MX2007002133A/es
Priority to EP05774699A priority patent/EP1790011A4/en
Priority to KR1020077003995A priority patent/KR101143346B1/ko
Priority to BRPI0514449-3A priority patent/BRPI0514449B1/pt
Priority to JP2007526477A priority patent/JP5081621B2/ja
Priority to CA2577198A priority patent/CA2577198C/en
Priority to PCT/FI2005/000488 priority patent/WO2006053938A1/en
Publication of FI20041479A publication Critical patent/FI20041479A/sv
Priority to IL181187A priority patent/IL181187A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
FI20041479A 2004-08-20 2004-11-17 Modifierad halvledar-driftdetektor FI20041479A (sv)

Priority Applications (14)

Application Number Priority Date Filing Date Title
FI20041479A FI20041479A (sv) 2004-11-17 2004-11-17 Modifierad halvledar-driftdetektor
CA2577198A CA2577198C (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
MX2007002133A MX2007002133A (es) 2004-08-20 2005-08-22 Detector de radiacion de semiconductor con una estructura de compuerta interna modificada.
KR1020077003995A KR101143346B1 (ko) 2004-08-20 2005-08-22 변형 내부 게이트 구조를 갖는 반도체 방사선 검출기
AU2005273818A AU2005273818B2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
PCT/FI2005/000359 WO2006018477A1 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
US11/660,562 US7816653B2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
RU2007104786/28A RU2376678C2 (ru) 2004-08-20 2005-08-22 Полупроводниковый детектор излучения с модифицированной структурой внутреннего затвора
EP05774699A EP1790011A4 (en) 2004-08-20 2005-08-22 SEMICONDUCTOR RADIATION DETECTOR WITH MODIFIED INTERNAL GRID STRUCTURE
EP14197959.1A EP2950346A3 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
BRPI0514449-3A BRPI0514449B1 (pt) 2004-08-20 2005-08-22 Radiation semiconductor detector with modified internal door structure
JP2007526477A JP5081621B2 (ja) 2004-08-20 2005-08-22 改変内部ゲート構造を用いた半導体放射線検出器
PCT/FI2005/000488 WO2006053938A1 (en) 2004-11-17 2005-11-16 Modified semiconductor drift detector
IL181187A IL181187A (en) 2004-08-20 2007-02-06 Semiconductor radiation detector with an internal gate structure adapted to the radiation detection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20041479A FI20041479A (sv) 2004-11-17 2004-11-17 Modifierad halvledar-driftdetektor

Publications (2)

Publication Number Publication Date
FI20041479A0 FI20041479A0 (sv) 2004-11-17
FI20041479A true FI20041479A (sv) 2006-05-05

Family

ID=33515238

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20041479A FI20041479A (sv) 2004-08-20 2004-11-17 Modifierad halvledar-driftdetektor

Country Status (3)

Country Link
BR (1) BRPI0514449B1 (sv)
FI (1) FI20041479A (sv)
WO (1) WO2006053938A1 (sv)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2446429A (en) 2006-12-08 2008-08-13 E2V Tech Photosensor with variable sensing area
JP6563810B2 (ja) * 2012-08-23 2019-08-21 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 半導体装置、放射ディテクタ及び製造方法
US9123837B2 (en) * 2013-05-31 2015-09-01 Oxford Instruments Analytical Oy Semiconductor detector with radiation shield
CN111373288A (zh) * 2017-12-15 2020-07-03 株式会社堀场制作所 硅漂移型放射线检测元件、硅漂移型放射线检测器和放射线检测装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8900343A (nl) * 1989-02-13 1990-09-03 Univ Delft Tech Plaatsgevoelige stralingsdetector.
DE10213812B4 (de) * 2002-03-27 2007-03-29 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Leitungsüberführung für einen Halbleiter-Detektor
DE10260229B3 (de) * 2002-12-20 2005-08-18 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiter-Detektor mit optimiertem Strahlungseintrittsfenster

Also Published As

Publication number Publication date
WO2006053938A1 (en) 2006-05-26
BRPI0514449B1 (pt) 2017-11-14
FI20041479A0 (sv) 2004-11-17
BRPI0514449A (pt) 2008-06-10

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