BRPI0514449A - detector semicondutor de radiação com uma estrutura de porta interna modificada - Google Patents
detector semicondutor de radiação com uma estrutura de porta interna modificadaInfo
- Publication number
- BRPI0514449A BRPI0514449A BRPI0514449-3A BRPI0514449A BRPI0514449A BR PI0514449 A BRPI0514449 A BR PI0514449A BR PI0514449 A BRPI0514449 A BR PI0514449A BR PI0514449 A BRPI0514449 A BR PI0514449A
- Authority
- BR
- Brazil
- Prior art keywords
- conductivity
- semiconductor detector
- radiation semiconductor
- internal door
- door frame
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
DETECTOR SEMICONDUTOR DE RADIAçãO COM UMA ESTRUTURA DE PORTA INTERNA MODIFICADA A invenção se refere a um dispositivo detector semicondutor de radiação que compreende uma camada condutora de lado traseira (102) de um primeiro tipo de condutividade e uma camada de corpo (103) . Pelo lado distal oposto à camada condutora de lado traseiro (102) tem-se uma camada interna de porta modificada (104) de um segundo tipo de condutividade, uma camada de barreira (105) da primeira condutividade e dopagens de pixels (110, 112, 506, 510, 512) do segundo tipo de condutividade. As dopagens de pixel são adaptadas para serem acopladas a uma tensão de pixel, definida como uma diferença de potencial a um potencial da camada condutora de lado traseiro (102), e que cria mínimos potenciais dentro do material do detector para atrair as cargas do sinal.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/FI2004/000492 WO2006018470A1 (en) | 2004-08-20 | 2004-08-20 | Semiconductor radiation detector with a modified internal gate structure |
FIPCT/FI2004/000492 | 2004-08-20 | ||
FI20041479 | 2004-11-17 | ||
FI20041479A FI20041479A (fi) | 2004-11-17 | 2004-11-17 | Muunnettu puolijohdeajautumisilmaisin |
PCT/FI2005/000359 WO2006018477A1 (en) | 2004-08-20 | 2005-08-22 | Semiconductor radiation detector with a modified internal gate structure |
Publications (2)
Publication Number | Publication Date |
---|---|
BRPI0514449A true BRPI0514449A (pt) | 2008-06-10 |
BRPI0514449B1 BRPI0514449B1 (pt) | 2017-11-14 |
Family
ID=33515238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0514449-3A BRPI0514449B1 (pt) | 2004-08-20 | 2005-08-22 | Radiation semiconductor detector with modified internal door structure |
Country Status (3)
Country | Link |
---|---|
BR (1) | BRPI0514449B1 (pt) |
FI (1) | FI20041479A (pt) |
WO (1) | WO2006053938A1 (pt) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2446429A (en) | 2006-12-08 | 2008-08-13 | E2V Tech | Photosensor with variable sensing area |
RU2015110023A (ru) * | 2012-08-23 | 2016-10-10 | Конинклейке Филипс Н.В. | Полупроводниковые детекторы счета фотонов |
US9123837B2 (en) * | 2013-05-31 | 2015-09-01 | Oxford Instruments Analytical Oy | Semiconductor detector with radiation shield |
CN111373288A (zh) * | 2017-12-15 | 2020-07-03 | 株式会社堀场制作所 | 硅漂移型放射线检测元件、硅漂移型放射线检测器和放射线检测装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8900343A (nl) * | 1989-02-13 | 1990-09-03 | Univ Delft Tech | Plaatsgevoelige stralingsdetector. |
DE10213812B4 (de) * | 2002-03-27 | 2007-03-29 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Leitungsüberführung für einen Halbleiter-Detektor |
DE10260229B3 (de) * | 2002-12-20 | 2005-08-18 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Halbleiter-Detektor mit optimiertem Strahlungseintrittsfenster |
-
2004
- 2004-11-17 FI FI20041479A patent/FI20041479A/fi not_active IP Right Cessation
-
2005
- 2005-08-22 BR BRPI0514449-3A patent/BRPI0514449B1/pt active IP Right Grant
- 2005-11-16 WO PCT/FI2005/000488 patent/WO2006053938A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
FI20041479A (fi) | 2006-05-05 |
BRPI0514449B1 (pt) | 2017-11-14 |
FI20041479A0 (fi) | 2004-11-17 |
WO2006053938A1 (en) | 2006-05-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B07A | Application suspended after technical examination (opinion) [chapter 7.1 patent gazette] | ||
B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |