DE602006017413D1 - SILICON CARBIDE SEMICONDUCTOR DEVICE - Google Patents

SILICON CARBIDE SEMICONDUCTOR DEVICE

Info

Publication number
DE602006017413D1
DE602006017413D1 DE602006017413T DE602006017413T DE602006017413D1 DE 602006017413 D1 DE602006017413 D1 DE 602006017413D1 DE 602006017413 T DE602006017413 T DE 602006017413T DE 602006017413 T DE602006017413 T DE 602006017413T DE 602006017413 D1 DE602006017413 D1 DE 602006017413D1
Authority
DE
Germany
Prior art keywords
semiconductor device
silicon carbide
carbide semiconductor
silicon
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006017413T
Other languages
German (de)
Inventor
Hiroshi Sugimoto
Yoshinori Matsuno
Kenichi Ohtsuka
Noboru Mikami
Kenichi Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE602006017413D1 publication Critical patent/DE602006017413D1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
DE602006017413T 2005-09-14 2006-04-24 SILICON CARBIDE SEMICONDUCTOR DEVICE Active DE602006017413D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005267264A JP5068009B2 (en) 2005-09-14 2005-09-14 Silicon carbide semiconductor device
PCT/JP2006/308531 WO2007032118A1 (en) 2005-09-14 2006-04-24 Silicon carbide semiconductor device

Publications (1)

Publication Number Publication Date
DE602006017413D1 true DE602006017413D1 (en) 2010-11-18

Family

ID=37864721

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006017413T Active DE602006017413D1 (en) 2005-09-14 2006-04-24 SILICON CARBIDE SEMICONDUCTOR DEVICE

Country Status (7)

Country Link
US (1) US7847296B2 (en)
EP (1) EP1936695B1 (en)
JP (1) JP5068009B2 (en)
KR (1) KR101004230B1 (en)
CN (1) CN101268555B (en)
DE (1) DE602006017413D1 (en)
WO (1) WO2007032118A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4921880B2 (en) * 2006-07-28 2012-04-25 株式会社東芝 High voltage semiconductor device
US8221546B2 (en) 2008-03-26 2012-07-17 Ss Sc Ip, Llc Epitaxial growth on low degree off-axis SiC substrates and semiconductor devices made thereby
DE102008025243B3 (en) * 2008-05-27 2009-12-10 Siced Electronics Development Gmbh & Co. Kg Semiconductor device with asymmetrical edge termination
JP2012146932A (en) * 2011-01-14 2012-08-02 Kansai Electric Power Co Inc:The Bipolar semiconductor element
JP2012146921A (en) * 2011-01-14 2012-08-02 Denso Corp Silicon carbide semiconductor device
JP2013239488A (en) 2012-05-11 2013-11-28 Rohm Co Ltd Semiconductor device
DE112014003637B4 (en) * 2013-08-08 2023-07-27 Fuji Electric Co., Ltd. High voltage semiconductor device and manufacturing method thereof
JPWO2022210255A1 (en) * 2021-03-31 2022-10-06

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264857A (en) * 1978-06-30 1981-04-28 International Business Machines Corporation Constant voltage threshold device
JPH09172187A (en) * 1995-12-19 1997-06-30 Hitachi Ltd Junction type field-effect semiconductor device and its manufacture
US6133587A (en) * 1996-01-23 2000-10-17 Denso Corporation Silicon carbide semiconductor device and process for manufacturing same
JP3471509B2 (en) * 1996-01-23 2003-12-02 株式会社デンソー Silicon carbide semiconductor device
JPH10107263A (en) * 1996-09-27 1998-04-24 Fuji Electric Co Ltd Insulated gate silicon carbide semiconductor device
SE9700156D0 (en) * 1997-01-21 1997-01-21 Abb Research Ltd Junction termination for Si C Schottky diode
WO1999048153A1 (en) * 1998-03-19 1999-09-23 Hitachi, Ltd. Silicon carbide semiconductor switching device
JP3635956B2 (en) 1998-12-24 2005-04-06 富士電機ホールディングス株式会社 Method for manufacturing silicon carbide Schottky barrier diode
JP4450123B2 (en) * 1999-11-17 2010-04-14 株式会社デンソー Silicon carbide semiconductor device
JP4110875B2 (en) * 2002-08-09 2008-07-02 株式会社デンソー Silicon carbide semiconductor device
US7214984B2 (en) * 2003-11-25 2007-05-08 Matsushita Electric Industrial Co., Ltd. High-breakdown-voltage insulated gate semiconductor device

Also Published As

Publication number Publication date
JP2007081144A (en) 2007-03-29
EP1936695A1 (en) 2008-06-25
US7847296B2 (en) 2010-12-07
WO2007032118A1 (en) 2007-03-22
CN101268555B (en) 2011-09-14
KR101004230B1 (en) 2010-12-24
EP1936695B1 (en) 2010-10-06
KR20080038220A (en) 2008-05-02
CN101268555A (en) 2008-09-17
US20090134404A1 (en) 2009-05-28
JP5068009B2 (en) 2012-11-07
EP1936695A4 (en) 2008-10-22

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