FI122011B - Menetelmä elektroniikkamoduulin tuottamiseksi, välituote elektroniikkamoduulin valmistamiseksi, muistielementti, painettu elektroniikkatuote, anturilaite sekä RFID-tunniste - Google Patents

Menetelmä elektroniikkamoduulin tuottamiseksi, välituote elektroniikkamoduulin valmistamiseksi, muistielementti, painettu elektroniikkatuote, anturilaite sekä RFID-tunniste Download PDF

Info

Publication number
FI122011B
FI122011B FI20075429A FI20075429A FI122011B FI 122011 B FI122011 B FI 122011B FI 20075429 A FI20075429 A FI 20075429A FI 20075429 A FI20075429 A FI 20075429A FI 122011 B FI122011 B FI 122011B
Authority
FI
Finland
Prior art keywords
layer
memory
intermediate product
electrode
layers
Prior art date
Application number
FI20075429A
Other languages
English (en)
Finnish (fi)
Swedish (sv)
Other versions
FI20075429A0 (fi
FI20075429A (fi
Inventor
Heikki Seppae
Tomi Mattila
Mark Allen
Ari Alastalo
Original Assignee
Teknologian Tutkimuskeskus Vtt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teknologian Tutkimuskeskus Vtt filed Critical Teknologian Tutkimuskeskus Vtt
Priority to FI20075429A priority Critical patent/FI122011B/fi
Publication of FI20075429A0 publication Critical patent/FI20075429A0/fi
Priority to EP08157721.5A priority patent/EP2001053B1/de
Priority to CN2008101099822A priority patent/CN101325245B/zh
Priority to US12/155,671 priority patent/US7915097B2/en
Publication of FI20075429A publication Critical patent/FI20075429A/fi
Application granted granted Critical
Publication of FI122011B publication Critical patent/FI122011B/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
FI20075429A 2007-06-08 2007-06-08 Menetelmä elektroniikkamoduulin tuottamiseksi, välituote elektroniikkamoduulin valmistamiseksi, muistielementti, painettu elektroniikkatuote, anturilaite sekä RFID-tunniste FI122011B (fi)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FI20075429A FI122011B (fi) 2007-06-08 2007-06-08 Menetelmä elektroniikkamoduulin tuottamiseksi, välituote elektroniikkamoduulin valmistamiseksi, muistielementti, painettu elektroniikkatuote, anturilaite sekä RFID-tunniste
EP08157721.5A EP2001053B1 (de) 2007-06-08 2008-06-06 Elektronikmodul, Herstellungsverfahren dafür und Anwendungen
CN2008101099822A CN101325245B (zh) 2007-06-08 2008-06-06 电子模块及其制造方法和应用
US12/155,671 US7915097B2 (en) 2007-06-08 2008-06-06 Electronic module with conductivity transformation region, method of manufacture and applications thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20075429 2007-06-08
FI20075429A FI122011B (fi) 2007-06-08 2007-06-08 Menetelmä elektroniikkamoduulin tuottamiseksi, välituote elektroniikkamoduulin valmistamiseksi, muistielementti, painettu elektroniikkatuote, anturilaite sekä RFID-tunniste

Publications (3)

Publication Number Publication Date
FI20075429A0 FI20075429A0 (fi) 2007-06-08
FI20075429A FI20075429A (fi) 2008-12-09
FI122011B true FI122011B (fi) 2011-07-15

Family

ID=38212400

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20075429A FI122011B (fi) 2007-06-08 2007-06-08 Menetelmä elektroniikkamoduulin tuottamiseksi, välituote elektroniikkamoduulin valmistamiseksi, muistielementti, painettu elektroniikkatuote, anturilaite sekä RFID-tunniste

Country Status (4)

Country Link
US (1) US7915097B2 (de)
EP (1) EP2001053B1 (de)
CN (1) CN101325245B (de)
FI (1) FI122011B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI124372B (fi) 2009-11-13 2014-07-31 Teknologian Tutkimuskeskus Vtt Kerrostettuihin partikkeleihin liittyvä menetelmä ja tuotteet
CN104347589B (zh) * 2013-08-02 2017-04-05 中芯国际集成电路制造(上海)有限公司 一种反熔丝结构
FI20155964A (fi) * 2015-12-17 2017-06-18 Teknologian Tutkimuskeskus Vtt Oy Sähköinen komponentti, piiri, laite, komponentin valmistusmenetelmä ja toimintamenetelmä
CN112054121B (zh) * 2020-09-14 2023-04-07 清华大学 阻变存储器、阻变存储器芯片及其制备方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5714766A (en) * 1995-09-29 1998-02-03 International Business Machines Corporation Nano-structure memory device
US7294366B2 (en) * 1998-09-30 2007-11-13 Optomec Design Company Laser processing for heat-sensitive mesoscale deposition
US6541792B1 (en) * 2001-09-14 2003-04-01 Hewlett-Packard Development Company, Llp Memory device having dual tunnel junction memory cells
US6821848B2 (en) * 2002-04-02 2004-11-23 Hewlett-Packard Development Company, L.P. Tunnel-junction structures and methods
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US6807079B2 (en) * 2002-11-01 2004-10-19 Hewlett-Packard Development Company, L.P. Device having a state dependent upon the state of particles dispersed in a carrier
ATE486368T1 (de) * 2002-12-18 2010-11-15 Ibm Verfahren zur selbstanordnung elektronischer schaltkreise und damit hergestellte schaltungen
KR100973282B1 (ko) * 2003-05-20 2010-07-30 삼성전자주식회사 나노 결정층을 구비하는 소노스 메모리 장치
DE102004003363A1 (de) * 2004-01-22 2005-08-18 Infineon Technologies Ag Verfahren zum Herstellen von Nanospeicherelementen zur Ladungsspeicherung
DE102004007633B4 (de) * 2004-02-17 2010-10-14 Qimonda Ag Speicherzelle, Halbleiter-Speicherbauelement und Verfahren zur Herstellung einer Speicherzelle
EP1723676A4 (de) * 2004-03-10 2009-04-15 Nanosys Inc Speicherbausteine mit nano-fähigkeit und anisotrope ladungsträger-arrays
DE102004020497B8 (de) 2004-04-26 2006-06-14 Infineon Technologies Ag Verfahren zur Herstellung von Durchkontaktierungen und Halbleiterbauteil mit derartigen Durchkontaktierungen
WO2005109516A1 (en) * 2004-05-06 2005-11-17 Sidense Corp. Split-channel antifuse array architecture
US20070057311A1 (en) 2004-10-29 2007-03-15 Agfa-Gevaert Conventionally printable non-volatile passive memory element and method of making thereof
US20060098485A1 (en) * 2004-10-29 2006-05-11 Agfa-Gevaert Printable non-volatile passive memory element and method of making thereof
US20060131555A1 (en) * 2004-12-22 2006-06-22 Micron Technology, Inc. Resistance variable devices with controllable channels
WO2006076606A2 (en) * 2005-01-14 2006-07-20 Cabot Corporation Optimized multi-layer printing of electronics and displays
US20060163744A1 (en) * 2005-01-14 2006-07-27 Cabot Corporation Printable electrical conductors
US7208372B2 (en) * 2005-01-19 2007-04-24 Sharp Laboratories Of America, Inc. Non-volatile memory resistor cell with nanotip electrode
DE102005005938B4 (de) * 2005-02-09 2009-04-30 Qimonda Ag Resistives Speicherelement mit verkürzter Löschzeit, Verfahren zur Herstellung und Speicherzellen-Anordnung
US7507618B2 (en) * 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
EP1899986B1 (de) 2005-07-01 2014-05-07 National University of Singapore Elektrisch leitfähiger verbundstoff
DE102005035445B4 (de) * 2005-07-28 2007-09-27 Qimonda Ag Nichtflüchtige, resistive Speicherzelle auf der Basis von Metalloxid-Nanopartikeln sowie Verfahren zu deren Herstellung und entsprechende Speicherzellenanordnung
US7297975B2 (en) * 2005-07-28 2007-11-20 Infineon Technologies Ag Non-volatile, resistive memory cell based on metal oxide nanoparticles, process for manufacturing the same and memory cell arrangement of the same
US7491962B2 (en) * 2005-08-30 2009-02-17 Micron Technology, Inc. Resistance variable memory device with nanoparticle electrode and method of fabrication
JP2007073969A (ja) * 2005-09-07 2007-03-22 Samsung Electronics Co Ltd 電荷トラップ型メモリ素子及びその製造方法
KR100790861B1 (ko) * 2005-10-21 2008-01-03 삼성전자주식회사 나노 도트를 포함하는 저항성 메모리 소자 및 그 제조 방법
FI121562B (fi) 2006-07-21 2010-12-31 Valtion Teknillinen Menetelmä johteiden ja puolijohteiden valmistamiseksi
EP2050319A4 (de) 2006-07-21 2010-12-08 Valtion Teknillinen Verfahren zur herstellung von leitern und halbleitern

Also Published As

Publication number Publication date
EP2001053A2 (de) 2008-12-10
FI20075429A0 (fi) 2007-06-08
FI20075429A (fi) 2008-12-09
US20080303583A1 (en) 2008-12-11
EP2001053B1 (de) 2014-10-29
CN101325245A (zh) 2008-12-17
EP2001053A3 (de) 2012-03-28
US7915097B2 (en) 2011-03-29
CN101325245B (zh) 2011-06-22

Similar Documents

Publication Publication Date Title
CN105118916B (zh) 电阻式存储器架构和装置
KR100375392B1 (ko) 2차원 또는 3차원 구조의 도전성 및/또는 반도전성 구조를 형성 및 제거하는 방법과 상기 형성 방법에 사용되는 전계 발생기/변조기
FI122009B (fi) Nanopartikkeleihin perustuvat rakenteet ja menetelmä niiden valmistamiseksi
US10460804B2 (en) Voltage-controlled resistive devices
FI122011B (fi) Menetelmä elektroniikkamoduulin tuottamiseksi, välituote elektroniikkamoduulin valmistamiseksi, muistielementti, painettu elektroniikkatuote, anturilaite sekä RFID-tunniste
CN103503154B (zh) 磁阻随机存取存储器器件及其形成方法
CN104409632B (zh) 一种多层结构有机阻变存储器的3d打印制备方法
WO2003094170A3 (en) Layout for thermally selected cross-point mram cell
ATE358876T1 (de) Multi-level speicherzelle
KR20170041774A (ko) 자기 저장 매체 및 데이터 기록 장치
CN105957963B (zh) 一种基于pet薄膜的模拟型纳米线阵列忆阻器及制备方法
ATE547814T1 (de) Phasenänderungsstromdichte-steuerstruktur
Hwang et al. Shape-tuned junction resistivity and self-damping dynamics in intense pulsed light sintering of silver nanostructure films
Purushothama et al. Electronically rewritable chipless RFID tags fabricated through thermal transfer printing on flexible PET substrates
US20180336947A1 (en) Temperature gradients for controlling memristor switching
Kharbanda et al. Design, fabrication and characterization of laser patterned LTCC micro hotplate with stable interconnects for gas sensor platform
US7759160B2 (en) Method for producing conductor structures and applications thereof
CN101185167A (zh) 可编程相变存储器及其方法
Zhu et al. Convertible Insulator–Conductor Transition in Silver Nanowire Networks: Engineering the Nanowire Junctions
Zhao et al. Memristor based on a layered FePS3 2D material with dual modes of resistive switching
NO20015509D0 (no) Elektrodeanordning, fremgangsmåte til dets fremstilling, apparat omfattende elektrodeanordningene, samt bruk av sistnevnte
Zeng et al. Controllable high-performance memristors based on 2D Fe2GeTe3 oxide for biological synapse imitation
JP5265582B2 (ja) Ａｍ４ｘ８型遷移元素の四面体アグリゲートを有する空隙尖晶石を電子データ再書き込み可能不揮発性メモリに使用すること及び対応する物質
WO2016040792A1 (en) Voltage-controlled resistive devices
Cai et al. Resistive switching in a negative temperature coefficient metal oxide memristive one-port

Legal Events

Date Code Title Description
PC Transfer of assignment of patent

Owner name: TEKNOLOGIAN TUTKIMUSKESKUS VTT

Free format text: TEKNOLOGIAN TUTKIMUSKESKUS VTT

FG Patent granted

Ref document number: 122011

Country of ref document: FI

MM Patent lapsed