FI20075429A - Elektroniikkamoduuli ja sen valmistusmenetelmä sekä sovellukset - Google Patents

Elektroniikkamoduuli ja sen valmistusmenetelmä sekä sovellukset Download PDF

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Publication number
FI20075429A
FI20075429A FI20075429A FI20075429A FI20075429A FI 20075429 A FI20075429 A FI 20075429A FI 20075429 A FI20075429 A FI 20075429A FI 20075429 A FI20075429 A FI 20075429A FI 20075429 A FI20075429 A FI 20075429A
Authority
FI
Finland
Prior art keywords
applications
manufacturing process
electronics module
electronics
module
Prior art date
Application number
FI20075429A
Other languages
English (en)
Swedish (sv)
Other versions
FI20075429A0 (fi
FI122011B (fi
Inventor
Tomi Mattila
Ari Alastalo
Mark Allen
Heikki Seppae
Original Assignee
Valtion Teknillinen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valtion Teknillinen filed Critical Valtion Teknillinen
Priority to FI20075429A priority Critical patent/FI122011B/fi
Publication of FI20075429A0 publication Critical patent/FI20075429A0/fi
Priority to CN2008101099822A priority patent/CN101325245B/zh
Priority to US12/155,671 priority patent/US7915097B2/en
Priority to EP08157721.5A priority patent/EP2001053B1/en
Publication of FI20075429A publication Critical patent/FI20075429A/fi
Application granted granted Critical
Publication of FI122011B publication Critical patent/FI122011B/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
FI20075429A 2007-06-08 2007-06-08 Menetelmä elektroniikkamoduulin tuottamiseksi, välituote elektroniikkamoduulin valmistamiseksi, muistielementti, painettu elektroniikkatuote, anturilaite sekä RFID-tunniste FI122011B (fi)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FI20075429A FI122011B (fi) 2007-06-08 2007-06-08 Menetelmä elektroniikkamoduulin tuottamiseksi, välituote elektroniikkamoduulin valmistamiseksi, muistielementti, painettu elektroniikkatuote, anturilaite sekä RFID-tunniste
CN2008101099822A CN101325245B (zh) 2007-06-08 2008-06-06 电子模块及其制造方法和应用
US12/155,671 US7915097B2 (en) 2007-06-08 2008-06-06 Electronic module with conductivity transformation region, method of manufacture and applications thereof
EP08157721.5A EP2001053B1 (en) 2007-06-08 2008-06-06 Electronics module, method for the manufacture thereof and applications

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20075429 2007-06-08
FI20075429A FI122011B (fi) 2007-06-08 2007-06-08 Menetelmä elektroniikkamoduulin tuottamiseksi, välituote elektroniikkamoduulin valmistamiseksi, muistielementti, painettu elektroniikkatuote, anturilaite sekä RFID-tunniste

Publications (3)

Publication Number Publication Date
FI20075429A0 FI20075429A0 (fi) 2007-06-08
FI20075429A true FI20075429A (fi) 2008-12-09
FI122011B FI122011B (fi) 2011-07-15

Family

ID=38212400

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20075429A FI122011B (fi) 2007-06-08 2007-06-08 Menetelmä elektroniikkamoduulin tuottamiseksi, välituote elektroniikkamoduulin valmistamiseksi, muistielementti, painettu elektroniikkatuote, anturilaite sekä RFID-tunniste

Country Status (4)

Country Link
US (1) US7915097B2 (fi)
EP (1) EP2001053B1 (fi)
CN (1) CN101325245B (fi)
FI (1) FI122011B (fi)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI124372B (fi) 2009-11-13 2014-07-31 Teknologian Tutkimuskeskus Vtt Kerrostettuihin partikkeleihin liittyvä menetelmä ja tuotteet
CN104347589B (zh) * 2013-08-02 2017-04-05 中芯国际集成电路制造(上海)有限公司 一种反熔丝结构
FI20155964A (fi) * 2015-12-17 2017-06-18 Teknologian Tutkimuskeskus Vtt Oy Sähköinen komponentti, piiri, laite, komponentin valmistusmenetelmä ja toimintamenetelmä
CN112054121B (zh) * 2020-09-14 2023-04-07 清华大学 阻变存储器、阻变存储器芯片及其制备方法

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US5714766A (en) * 1995-09-29 1998-02-03 International Business Machines Corporation Nano-structure memory device
US7294366B2 (en) * 1998-09-30 2007-11-13 Optomec Design Company Laser processing for heat-sensitive mesoscale deposition
US6541792B1 (en) * 2001-09-14 2003-04-01 Hewlett-Packard Development Company, Llp Memory device having dual tunnel junction memory cells
US6821848B2 (en) * 2002-04-02 2004-11-23 Hewlett-Packard Development Company, L.P. Tunnel-junction structures and methods
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US6807079B2 (en) 2002-11-01 2004-10-19 Hewlett-Packard Development Company, L.P. Device having a state dependent upon the state of particles dispersed in a carrier
ATE486368T1 (de) * 2002-12-18 2010-11-15 Ibm Verfahren zur selbstanordnung elektronischer schaltkreise und damit hergestellte schaltungen
KR100973282B1 (ko) * 2003-05-20 2010-07-30 삼성전자주식회사 나노 결정층을 구비하는 소노스 메모리 장치
DE102004003363A1 (de) * 2004-01-22 2005-08-18 Infineon Technologies Ag Verfahren zum Herstellen von Nanospeicherelementen zur Ladungsspeicherung
DE102004007633B4 (de) * 2004-02-17 2010-10-14 Qimonda Ag Speicherzelle, Halbleiter-Speicherbauelement und Verfahren zur Herstellung einer Speicherzelle
WO2005089165A2 (en) * 2004-03-10 2005-09-29 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays
DE102004020497B8 (de) 2004-04-26 2006-06-14 Infineon Technologies Ag Verfahren zur Herstellung von Durchkontaktierungen und Halbleiterbauteil mit derartigen Durchkontaktierungen
EP1743380B1 (en) * 2004-05-06 2016-12-28 Sidense Corp. Split-channel antifuse array architecture
US20060098485A1 (en) * 2004-10-29 2006-05-11 Agfa-Gevaert Printable non-volatile passive memory element and method of making thereof
US20070057311A1 (en) 2004-10-29 2007-03-15 Agfa-Gevaert Conventionally printable non-volatile passive memory element and method of making thereof
US20060131555A1 (en) * 2004-12-22 2006-06-22 Micron Technology, Inc. Resistance variable devices with controllable channels
US20060163744A1 (en) * 2005-01-14 2006-07-27 Cabot Corporation Printable electrical conductors
WO2006076606A2 (en) 2005-01-14 2006-07-20 Cabot Corporation Optimized multi-layer printing of electronics and displays
US7208372B2 (en) * 2005-01-19 2007-04-24 Sharp Laboratories Of America, Inc. Non-volatile memory resistor cell with nanotip electrode
DE102005005938B4 (de) * 2005-02-09 2009-04-30 Qimonda Ag Resistives Speicherelement mit verkürzter Löschzeit, Verfahren zur Herstellung und Speicherzellen-Anordnung
US7507618B2 (en) * 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
US8421231B2 (en) 2005-07-01 2013-04-16 National University Of Singapore Electrically conductive composite
US7297975B2 (en) * 2005-07-28 2007-11-20 Infineon Technologies Ag Non-volatile, resistive memory cell based on metal oxide nanoparticles, process for manufacturing the same and memory cell arrangement of the same
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FI121562B (fi) 2006-07-21 2010-12-31 Valtion Teknillinen Menetelmä johteiden ja puolijohteiden valmistamiseksi
US9011762B2 (en) 2006-07-21 2015-04-21 Valtion Teknillinen Tutkimuskeskus Method for manufacturing conductors and semiconductors

Also Published As

Publication number Publication date
EP2001053A2 (en) 2008-12-10
EP2001053B1 (en) 2014-10-29
US7915097B2 (en) 2011-03-29
EP2001053A3 (en) 2012-03-28
CN101325245A (zh) 2008-12-17
CN101325245B (zh) 2011-06-22
FI20075429A0 (fi) 2007-06-08
US20080303583A1 (en) 2008-12-11
FI122011B (fi) 2011-07-15

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