FI116008B - LC-elementti, puolijohdelaite ja LC-elementin valmistusmenetelmä - Google Patents
LC-elementti, puolijohdelaite ja LC-elementin valmistusmenetelmä Download PDFInfo
- Publication number
- FI116008B FI116008B FI946026A FI946026A FI116008B FI 116008 B FI116008 B FI 116008B FI 946026 A FI946026 A FI 946026A FI 946026 A FI946026 A FI 946026A FI 116008 B FI116008 B FI 116008B
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- FI
- Finland
- Prior art keywords
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- coil electrode
- electrode
- element according
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 61
- 239000004065 semiconductor Substances 0.000 title claims description 57
- 239000003990 capacitor Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 44
- 230000008054 signal transmission Effects 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 36
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 230000036961 partial effect Effects 0.000 claims description 5
- 230000002441 reversible effect Effects 0.000 claims description 5
- 210000003323 beak Anatomy 0.000 claims 1
- 230000004044 response Effects 0.000 description 35
- 230000004888 barrier function Effects 0.000 description 21
- 238000013016 damping Methods 0.000 description 19
- 230000008901 benefit Effects 0.000 description 18
- 230000006870 function Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005549 size reduction Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
- H03H2001/0064—Constructional details comprising semiconductor material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
- H03H2001/0078—Constructional details comprising spiral inductor on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35182393 | 1993-12-29 | ||
| JP35182393A JP3461886B2 (ja) | 1993-12-29 | 1993-12-29 | Ｌｃ素子，半導体装置及びｌｃ素子の製造方法 |
| JP25753794A JPH0897373A (ja) | 1994-09-27 | 1994-09-27 | Ｌｃ素子，半導体装置及びｌｃ素子の製造方法 |
| JP25753794 | 1994-09-27 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI946026A0 FI946026A0 (fi) | 1994-12-22 |
| FI946026A FI946026A (fi) | 1995-06-30 |
| FI116008B true FI116008B (fi) | 2005-08-31 |
Family
ID=26543252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI946026A FI116008B (fi) | 1993-12-29 | 1994-12-22 | LC-elementti, puolijohdelaite ja LC-elementin valmistusmenetelmä |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5705963A (zh) |
| EP (1) | EP0661805B1 (zh) |
| KR (1) | KR100315267B1 (zh) |
| DE (1) | DE69417199T2 (zh) |
| FI (1) | FI116008B (zh) |
| TW (1) | TW267260B (zh) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6008713A (en) * | 1996-02-29 | 1999-12-28 | Texas Instruments Incorporated | Monolithic inductor |
| JP3942264B2 (ja) | 1998-03-11 | 2007-07-11 | 富士通株式会社 | 半導体基板上に形成されるインダクタンス素子 |
| JPH11317621A (ja) | 1998-05-07 | 1999-11-16 | Tif:Kk | Ｌｃ発振器 |
| US6310393B1 (en) * | 1998-10-09 | 2001-10-30 | Matsushita Electric Industrial Co., Ltd. | Electric circuit and package for semiconductor |
| FR2792775B1 (fr) * | 1999-04-20 | 2001-11-23 | France Telecom | Dispositif de circuit integre comprenant une inductance a haut coefficient de qualite |
| DE69919756T2 (de) * | 1999-05-18 | 2005-09-15 | Niigata Seimitsu Co., Ltd., Jouetsu | Oszillator |
| US6133079A (en) * | 1999-07-22 | 2000-10-17 | Chartered Semiconductor Manufacturing Ltd. | Method for reducing substrate capacitive coupling of a thin film inductor by reverse P/N junctions |
| JP2001044754A (ja) * | 1999-07-26 | 2001-02-16 | Niigata Seimitsu Kk | Ｌｃ発振器 |
| GB2353139B (en) * | 1999-08-12 | 2001-08-29 | United Microelectronics Corp | Inductor and method of manufacturing the same |
| GB2361123A (en) | 2000-04-04 | 2001-10-10 | Nokia Mobile Phones Ltd | Polyphase filters in silicon integrated circuit technology |
| US6917095B1 (en) | 2000-05-30 | 2005-07-12 | Altera Corporation | Integrated radio frequency circuits |
| US6441442B1 (en) * | 2000-05-30 | 2002-08-27 | Programmable Silicon Solutions | Integrated inductive circuits |
| EP1160842A3 (en) * | 2000-05-30 | 2003-09-17 | Programmable Silicon Solutions | Integrated radio frequency circuits |
| JP4256575B2 (ja) * | 2000-08-15 | 2009-04-22 | パナソニック株式会社 | バイアホールを備えた高周波受動回路および高周波増幅器 |
| FR2851078A1 (fr) * | 2003-02-07 | 2004-08-13 | St Microelectronics Sa | Inductance integree et circuit electronique l'incorporant |
| US7288417B2 (en) * | 2005-01-06 | 2007-10-30 | International Business Machines Corporation | On-chip signal transformer for ground noise isolation |
| US8129817B2 (en) | 2008-12-31 | 2012-03-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reducing high-frequency signal loss in substrates |
| US8546907B2 (en) * | 2009-04-15 | 2013-10-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Enhanced transmission lines for radio frequency applications |
| US9698214B1 (en) * | 2016-03-31 | 2017-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Capacitor structure of integrated circuit chip and method of fabricating the same |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3022472A (en) * | 1958-01-22 | 1962-02-20 | Bell Telephone Labor Inc | Variable equalizer employing semiconductive element |
| US3258723A (en) * | 1962-01-30 | 1966-06-28 | Osafune ia | |
| US3328600A (en) * | 1964-02-06 | 1967-06-27 | Halliburton Co | Solid-state relay for mark-space system employing oscillator intercoupling input andoutput filters providing signal isolation and interference-free output |
| US3778643A (en) * | 1972-05-18 | 1973-12-11 | Gen Motors Corp | A solid state variable delay line using reversed biased pn junctions |
| JPS60225449A (ja) * | 1984-04-24 | 1985-11-09 | Sumitomo Electric Ind Ltd | 半導体集積回路パツケ−ジ |
| FR2567325B1 (fr) * | 1984-07-03 | 1986-11-14 | Thomson Csf | Element a capacite variable, commandable par une tension continue |
| US5023578A (en) * | 1987-08-11 | 1991-06-11 | Murata Manufacturing Co., Ltd. | Filter array having a plurality of capacitance elements |
| JP3280019B2 (ja) * | 1989-10-26 | 2002-04-30 | 新潟精密株式会社 | Ｌｃノイズフィルタ |
| US5420553A (en) * | 1991-01-16 | 1995-05-30 | Murata Manufacturing Co., Ltd. | Noise filter |
| US5283462A (en) * | 1991-11-04 | 1994-02-01 | Motorola, Inc. | Integrated distributed inductive-capacitive network |
| TW275152B (zh) * | 1993-11-01 | 1996-05-01 | Ikeda Takeshi | |
| US5497028A (en) * | 1993-11-10 | 1996-03-05 | Ikeda; Takeshi | LC element and semiconductor device having a signal transmission line and LC element manufacturing method |
-
1994
- 1994-12-17 TW TW083111799A patent/TW267260B/zh active
- 1994-12-19 US US08/358,770 patent/US5705963A/en not_active Expired - Fee Related
- 1994-12-21 DE DE69417199T patent/DE69417199T2/de not_active Expired - Fee Related
- 1994-12-21 EP EP94120305A patent/EP0661805B1/en not_active Expired - Lifetime
- 1994-12-22 FI FI946026A patent/FI116008B/fi not_active IP Right Cessation
- 1994-12-27 KR KR1019940037280A patent/KR100315267B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0661805B1 (en) | 1999-03-17 |
| FI946026A (fi) | 1995-06-30 |
| US5705963A (en) | 1998-01-06 |
| TW267260B (zh) | 1996-01-01 |
| EP0661805A1 (en) | 1995-07-05 |
| KR100315267B1 (ko) | 2002-04-24 |
| DE69417199D1 (de) | 1999-04-22 |
| FI946026A0 (fi) | 1994-12-22 |
| KR950021507A (ko) | 1995-07-26 |
| DE69417199T2 (de) | 1999-11-25 |
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| Date | Code | Title | Description |
|---|---|---|---|
| FG | Patent granted |
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| MA | Patent expired |