FI109770B - Förfarande för framställning av metallnitridtunnfilmer - Google Patents

Förfarande för framställning av metallnitridtunnfilmer Download PDF

Info

Publication number
FI109770B
FI109770B FI20010539A FI20010539A FI109770B FI 109770 B FI109770 B FI 109770B FI 20010539 A FI20010539 A FI 20010539A FI 20010539 A FI20010539 A FI 20010539A FI 109770 B FI109770 B FI 109770B
Authority
FI
Finland
Prior art keywords
nitrogen
source
metal
hydrocarbon
nitrogen source
Prior art date
Application number
FI20010539A
Other languages
English (en)
Finnish (fi)
Other versions
FI20010539A0 (sv
Inventor
Marika Juppo
Markku Leskelae
Mikko Ritala
Petra Alen
Original Assignee
Asm Microchemistry Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Microchemistry Oy filed Critical Asm Microchemistry Oy
Priority to FI20010539A priority Critical patent/FI109770B/sv
Publication of FI20010539A0 publication Critical patent/FI20010539A0/sv
Priority to US10/100,500 priority patent/US6706115B2/en
Application granted granted Critical
Publication of FI109770B publication Critical patent/FI109770B/sv

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising transition metals

Claims (14)

1. Förfarande for odling av övergängsmetallnitridtunnfilmer i enlighet med principema för ALD-förfarandet, enligt vilken metod en nitridtunnfilm odlas pä ett substrat medelst 5 altemerande ytreaktioner för ett metall- och ett kväveutgängsämne, kanne-tecknat avatt säsom kväveutgängsämne används en förening, väri en kolväte-, amino- eller silylgrupp är bunden vid kväve, vilken grupp producerar en radikal, da den dissocierar homolytiskt frän kvävet, vilken radikal fungerar säsom ett reduktionsmedel och/eller reagerar vidare under det att den producerar atomärt väte. 10
2. Förfarande enligt patentkrav 1, kännetecknat av att säsom kväveutgängsämne används en eller flera föreningar enligt bruttoformeln (I) NRxH3.x (I) 15. vilken formel * · · • · · • ‘ · *; R är en kolväte-, amino- eller silylgrupp, R:en kan vara lika eller olika och ';; · x är heltalet 1,2 eller 3.
”' 3. Förfarande enligt nägot av de föregäende patentkraven, kännetecknat av att . . 20 bindningsenergin mellan aminen och kolvätegruppen R är mindre än 460 kJ/mol.
4. Förfarande enligt patentkrav 1 eller 2, kännetecknat avattRären '.* substituerad eller osubstituerad, cyklisk, lineär eller förgrenad, alkyl-, alkenyl-, allyl-, ‘ * aryl-, alkylaryl- eller arylalkylgrupp. :;M 25 27 109770
5. Förfarande enligt nägot av de föregäende patentkraven, kännetecknat avattR är en linear eller forgrenad Ci- Cio-alkyl, foreträdesvis en tertiär alkyl.
6. Förfarande enligt nägot av de föregäende patentkraven, kännetecknat avatt 5 ett eller flera av de nämnda kväveutgängsämnena används tillsammans med ammoniak, hydrazin eller hydrazinderivat.
7. Förfarande enligt nägot av de föregäende patentkraven, kännetecknat avatt säsom metallutgängsämne används en förening enligt bruttoformeln (II) 10 MXnLz ai) i vilken formel ':'. M är en övergängsmetall,
15 X är en negativt laddad ligand, vaije X är oberoende av de övriga en halid, hydrid, ’;;. * alkylamid, alkoxid, aryloxid, alkyl, cyklopentadienyl eller β-diketonat, • 1: ’" n är ett heltal, som uttrycker ligandemas X antal, dä varje ligands laddning är -1, :· n är detsamma som metallens oxidationsgrad i utgängsämnet MXn, , -, · L är en neutral adduktligand, som binder sig vid M medelst en eller flera av sinä . · *. 20 atomer, och ) i t : ·]: z ärheltalet 0,1,2,3 eller 4. * . f » i t ·
8. Förfarande enligt patentkrav 7, kännetecknat avatt metallen M hör tili gruppen 3, 4, 5, 6, 7, 8, 9, 10, 11 eller 12 enligt den av IUPAC rekommenderade 25 gruppnumreringen i det periodiska systemet. 28 109770
9. Förfarande enligt patentkrav 7 eller 8, kännetecknat avatt metallutgängsämnet är övergängmetallens halid eller alkylamid. 5
10. Förfarande enligt nägot av föregäende patentkrav, kännetecknat avatt metallutgängsämnet är TaCls, TaBrs eller Tals och som kväveutgängsämne används ätminstone tertbutylamin eller allylamin.
11. Förfarande enligt nägot av föregäende patentkrav, kännetecknat avatt 10 metallutgängsämnet är TiCLt, TiBr* eller T1I4 och säsom kväveutgängsämne används ätminstone tertbutylamin eller allylamin.
12. Förfarande för framställning av ett ledande diffusionshinderskikt pä ett underlag ... omfattande integrerade kretsar mellan en elledare och ett isoleringsskikt, enligt vilket '•t 15 förfarande : : - en integrerad krets med elledare förs tili ett reaktionsutrymme i en ALD-reaktor och '*·. - för den integrerade kretsen bildas en ledande metallnitridtunnfilm i enlighet med principema för ALD-förfarandet medelst altemerande :' ·.: 20 ytreaktioner för metall- och kväveutgängsämnen, « * » · " kännetecknat avatt .···. - tili kväveutgängsämne väljs en förening, väri en sädan kolväte-, ,:. amino- eller silylgrupp är bunden tili kväve som producerar en radikal, 1’’. dä den dissocierar homolytiskt frän kvävet, vilken radikal verkar som 25 ett reduktionsmedel och/eller reagerar vidare under det att den producerar atomärt väte. j ,,, 109770
13. Förfarande för framställande av ett ledande TaN -diffusionshinderskikt pä ett underlag, som omfattar integrerade kretsar, enligt vilket förfarande - en integrerad krets med elledare förs tili ALD-reaktoms reaktionsutrymmet i en ALD-reaktor 5. en ledande metallnitridtunnfilm odlas pä den integrerade kretsen i enlighet med principema för ALD-förfarandet medelst altemerande ytreaktioner för tantal- och kväveutgängsämnen, kännetecknat avatt - som kväveutgängsämne väljs en förening, väri en sädan kolväte-, 10 amino- eller silylgrupp är bunden tili kväve som producerar en radikal, da den dissocierar homolytiskt ffän kvävet, vilken radikal verkar som reduktionsmedel och/eller reagerar vidare under det att den producerar atomärt väte. ’: 15
14. Förfarande enligt patentkrav 13 för ffamställning av ett ledande TaN -diffusions- • · hinderskikt, kännetecknat av att som tantalutgängsämne väljs en eller flera ; : föreningar ur gruppen: tantalpentaklorid, tantalpentajodid och tantalpentabromid, och som kväveutgängsämne väljs tertbutylamin eller allylamin, eller tertbutylamin eller ,.. allylamin tillsammans med ammoniak. • t I t » f · i i • · f I * · · » · ·
FI20010539A 2001-03-16 2001-03-16 Förfarande för framställning av metallnitridtunnfilmer FI109770B (sv)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI20010539A FI109770B (sv) 2001-03-16 2001-03-16 Förfarande för framställning av metallnitridtunnfilmer
US10/100,500 US6706115B2 (en) 2001-03-16 2002-03-15 Method for preparing metal nitride thin films

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20010539A FI109770B (sv) 2001-03-16 2001-03-16 Förfarande för framställning av metallnitridtunnfilmer
FI20010539 2001-03-16

Publications (2)

Publication Number Publication Date
FI20010539A0 FI20010539A0 (sv) 2001-03-16
FI109770B true FI109770B (sv) 2002-10-15

Family

ID=8560766

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20010539A FI109770B (sv) 2001-03-16 2001-03-16 Förfarande för framställning av metallnitridtunnfilmer

Country Status (2)

Country Link
US (1) US6706115B2 (sv)
FI (1) FI109770B (sv)

Families Citing this family (134)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6974766B1 (en) 1998-10-01 2005-12-13 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US6727169B1 (en) * 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6936538B2 (en) 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7101795B1 (en) * 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US6596643B2 (en) 2001-05-07 2003-07-22 Applied Materials, Inc. CVD TiSiN barrier for copper integration
US6849545B2 (en) * 2001-06-20 2005-02-01 Applied Materials, Inc. System and method to form a composite film stack utilizing sequential deposition techniques
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
WO2003029515A2 (en) * 2001-07-16 2003-04-10 Applied Materials, Inc. Formation of composite tungsten films
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US20030017697A1 (en) * 2001-07-19 2003-01-23 Kyung-In Choi Methods of forming metal layers using metallic precursors
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
JP4178776B2 (ja) * 2001-09-03 2008-11-12 東京エレクトロン株式会社 成膜方法
US6718126B2 (en) 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
TW589684B (en) * 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
KR20030043380A (ko) * 2001-11-28 2003-06-02 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
US6773507B2 (en) 2001-12-06 2004-08-10 Applied Materials, Inc. Apparatus and method for fast-cycle atomic layer deposition
US7081271B2 (en) 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US6809026B2 (en) 2001-12-21 2004-10-26 Applied Materials, Inc. Selective deposition of a barrier layer on a metal film
US6939801B2 (en) * 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US7374617B2 (en) 2002-04-25 2008-05-20 Micron Technology, Inc. Atomic layer deposition methods and chemical vapor deposition methods
US7067439B2 (en) * 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US6858547B2 (en) 2002-06-14 2005-02-22 Applied Materials, Inc. System and method for forming a gate dielectric
US20030232501A1 (en) 2002-06-14 2003-12-18 Kher Shreyas S. Surface pre-treatment for enhancement of nucleation of high dielectric constant materials
US20040013803A1 (en) * 2002-07-16 2004-01-22 Applied Materials, Inc. Formation of titanium nitride films using a cyclical deposition process
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US6772072B2 (en) 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
US6967159B2 (en) * 2002-08-28 2005-11-22 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using organic amines
US6995081B2 (en) * 2002-08-28 2006-02-07 Micron Technology, Inc. Systems and methods for forming tantalum silicide layers
US6794284B2 (en) * 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US7262133B2 (en) * 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US20040144980A1 (en) * 2003-01-27 2004-07-29 Ahn Kie Y. Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers
US6753248B1 (en) 2003-01-27 2004-06-22 Applied Materials, Inc. Post metal barrier/adhesion film
US20040175926A1 (en) * 2003-03-07 2004-09-09 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having a barrier-lined opening
US7378129B2 (en) * 2003-08-18 2008-05-27 Micron Technology, Inc. Atomic layer deposition methods of forming conductive metal nitride comprising layers
US20050056219A1 (en) * 2003-09-16 2005-03-17 Tokyo Electron Limited Formation of a metal-containing film by sequential gas exposure in a batch type processing system
US20050067103A1 (en) 2003-09-26 2005-03-31 Applied Materials, Inc. Interferometer endpoint monitoring device
US20050153571A1 (en) * 2003-11-17 2005-07-14 Yoshihide Senzaki Nitridation of high-k dielectric films
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US7241686B2 (en) 2004-07-20 2007-07-10 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
JP4870759B2 (ja) * 2005-06-29 2012-02-08 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ３成分膜の新規な堆積方法
DE102005033579A1 (de) * 2005-07-19 2007-01-25 H.C. Starck Gmbh Verfahren zur Herstellung dünner Hafnium- oder Zirkonnitrid-Schichten
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
US7521356B2 (en) * 2005-09-01 2009-04-21 Micron Technology, Inc. Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
TWI332532B (en) 2005-11-04 2010-11-01 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
US7592251B2 (en) 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US7759747B2 (en) * 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
US7521379B2 (en) 2006-10-09 2009-04-21 Applied Materials, Inc. Deposition and densification process for titanium nitride barrier layers
US8268409B2 (en) * 2006-10-25 2012-09-18 Asm America, Inc. Plasma-enhanced deposition of metal carbide films
US20080176149A1 (en) 2006-10-30 2008-07-24 Applied Materials, Inc. Endpoint detection for photomask etching
US7611751B2 (en) 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
US20080268642A1 (en) * 2007-04-20 2008-10-30 Kazutaka Yanagita Deposition of transition metal carbide containing films
US7713874B2 (en) * 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
US7638170B2 (en) 2007-06-21 2009-12-29 Asm International N.V. Low resistivity metal carbonitride thin film deposition by atomic layer deposition
US8017182B2 (en) * 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
US7678298B2 (en) 2007-09-25 2010-03-16 Applied Materials, Inc. Tantalum carbide nitride materials by vapor deposition processes
US7824743B2 (en) 2007-09-28 2010-11-02 Applied Materials, Inc. Deposition processes for titanium nitride barrier and aluminum
US7816278B2 (en) * 2008-03-28 2010-10-19 Tokyo Electron Limited In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
WO2009129332A2 (en) * 2008-04-16 2009-10-22 Asm America, Inc. Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds
CN102076882B (zh) * 2008-04-25 2013-12-25 Asm国际公司 用于碲和硒薄膜的ald的前体的合成和应用
US7666474B2 (en) 2008-05-07 2010-02-23 Asm America, Inc. Plasma-enhanced pulsed deposition of metal carbide films
US20100062149A1 (en) 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US8491967B2 (en) 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US8146896B2 (en) 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US20100136313A1 (en) * 2008-12-01 2010-06-03 Asm Japan K.K. Process for forming high resistivity thin metallic film
EP2494587B1 (en) 2009-10-26 2020-07-15 ASM International N.V. Atomic layer deposition of antimony containing thin films
US8778204B2 (en) 2010-10-29 2014-07-15 Applied Materials, Inc. Methods for reducing photoresist interference when monitoring a target layer in a plasma process
US8961804B2 (en) 2011-10-25 2015-02-24 Applied Materials, Inc. Etch rate detection for photomask etching
US8808559B2 (en) 2011-11-22 2014-08-19 Applied Materials, Inc. Etch rate detection for reflective multi-material layers etching
US8900469B2 (en) 2011-12-19 2014-12-02 Applied Materials, Inc. Etch rate detection for anti-reflective coating layer and absorber layer etching
US8815344B2 (en) * 2012-03-14 2014-08-26 Applied Materials, Inc. Selective atomic layer depositions
US9805939B2 (en) 2012-10-12 2017-10-31 Applied Materials, Inc. Dual endpoint detection for advanced phase shift and binary photomasks
US8778574B2 (en) 2012-11-30 2014-07-15 Applied Materials, Inc. Method for etching EUV material layers utilized to form a photomask
US9412602B2 (en) 2013-03-13 2016-08-09 Asm Ip Holding B.V. Deposition of smooth metal nitride films
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US9460932B2 (en) 2013-11-11 2016-10-04 Applied Materials, Inc. Surface poisoning using ALD for high selectivity deposition of high aspect ratio features
US9178152B2 (en) 2013-12-23 2015-11-03 Intermolecular, Inc. Metal organic chemical vapor deposition of embedded resistors for ReRAM cells
US9243321B2 (en) 2013-12-30 2016-01-26 Intermolecular, Inc. Ternary metal nitride formation by annealing constituent layers
US9394609B2 (en) 2014-02-13 2016-07-19 Asm Ip Holding B.V. Atomic layer deposition of aluminum fluoride thin films
US10643925B2 (en) 2014-04-17 2020-05-05 Asm Ip Holding B.V. Fluorine-containing conductive films
KR102216575B1 (ko) 2014-10-23 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 티타늄 알루미늄 및 탄탈륨 알루미늄 박막들
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
CN105669983B (zh) * 2016-01-22 2019-02-22 中国人民解放军国防科学技术大学 一种含锆有机金属聚合物陶瓷先驱体及其制备方法与应用
CN105669982B (zh) * 2016-01-22 2018-08-21 中国人民解放军国防科学技术大学 一种有机金属聚合物复相陶瓷先驱体及其制备方法与应用
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
KR20180038823A (ko) * 2016-10-07 2018-04-17 삼성전자주식회사 유기 금속 전구체, 이를 이용한 막 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US10186420B2 (en) 2016-11-29 2019-01-22 Asm Ip Holding B.V. Formation of silicon-containing thin films
US10619242B2 (en) * 2016-12-02 2020-04-14 Asm Ip Holding B.V. Atomic layer deposition of rhenium containing thin films
US10847529B2 (en) 2017-04-13 2020-11-24 Asm Ip Holding B.V. Substrate processing method and device manufactured by the same
US10504901B2 (en) 2017-04-26 2019-12-10 Asm Ip Holding B.V. Substrate processing method and device manufactured using the same
CN110546302B (zh) 2017-05-05 2022-05-27 Asm Ip 控股有限公司 用于受控形成含氧薄膜的等离子体增强沉积方法
US10236517B2 (en) * 2017-08-16 2019-03-19 GM Global Technology Operations LLC Method for manufacturing and cleaning a stainless steel fuel cell bipolar plate
US10381315B2 (en) 2017-11-16 2019-08-13 Samsung Electronics Co., Ltd. Method and system for providing a reverse-engineering resistant hardware embedded security module
US10689405B2 (en) * 2017-11-30 2020-06-23 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Titanium-containing film forming compositions for vapor deposition of titanium-containing films
US10584039B2 (en) 2017-11-30 2020-03-10 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Titanium-containing film forming compositions for vapor deposition of titanium-containing films
TWI761636B (zh) 2017-12-04 2022-04-21 荷蘭商Ａｓｍ Ｉｐ控股公司 電漿增強型原子層沉積製程及沉積碳氧化矽薄膜的方法
KR102449895B1 (ko) 2018-05-18 2022-09-30 삼성전자주식회사 반도체 장치와 그 제조 방법
US11021793B2 (en) 2018-05-31 2021-06-01 L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films
KR102355507B1 (ko) * 2018-11-14 2022-01-27 (주)디엔에프 몰리브덴 함유 박막의 제조방법 및 이로부터 제조된 몰리브덴함유 박막
TWI819180B (zh) * 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
US20200362458A1 (en) * 2019-05-14 2020-11-19 Applied Materials, Inc. Deposition of rhenium-containing thin films
TW202124757A (zh) * 2019-10-29 2021-07-01 美商應用材料股份有限公司 生長低電阻率含金屬膜之方法
TW202204667A (zh) 2020-06-11 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬二硫屬化合物薄膜之原子層沉積及蝕刻

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI117944B (sv) 1999-10-15 2007-04-30 Asm Int Förfarande för framställning av övergångsmetallnitridtunnfilmer
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US5342652A (en) 1992-06-15 1994-08-30 Materials Research Corporation Method of nucleating tungsten on titanium nitride by CVD without silane
FI97731C (sv) 1994-11-28 1997-02-10 Mikrokemia Oy Förfarande och anordning för framställning av tunnfilmer
FI100409B (sv) 1994-11-28 1997-11-28 Asm Int Förfarande och anläggning för framställning av tunnfilmer
DE69517158T2 (de) 1994-11-30 2001-01-25 Micron Technology Inc Verfahren zum auftragen von wolframnitrid unter verwendung eines silicium enthaltenden gases
JPH08264530A (ja) 1995-03-20 1996-10-11 Fujitsu Ltd 半導体装置の製造方法及び半導体装置の製造装置
US5595784A (en) 1995-08-01 1997-01-21 Kaim; Robert Titanium nitride and multilayers formed by chemical vapor deposition of titanium halides
KR0155918B1 (ko) 1995-11-03 1998-12-01 김광호 선택적 텅스텐질화박막을 이용한 반도체장치의 캐패시터 형성방법
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
EP0841690B1 (en) 1996-11-12 2006-03-01 Samsung Electronics Co., Ltd. Tungsten nitride (WNx) layer manufacturing method and metal wiring manufacturing method
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
KR100261017B1 (ko) * 1997-08-19 2000-08-01 윤종용 반도체 장치의 금속 배선층을 형성하는 방법
US5913145A (en) 1997-08-28 1999-06-15 Texas Instruments Incorporated Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures
FI104383B (sv) * 1997-12-09 2000-01-14 Fortum Oil & Gas Oy Förfarande för beläggning av insidan av en anläggning
DE10080457T1 (de) 1999-02-12 2001-04-26 Gelest Inc CVD-Abscheidung von Wolframnitrid
US6200893B1 (en) 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
AU1208201A (en) 1999-10-15 2001-04-30 Asm America, Inc. Method for depositing nanolaminate thin films on sensitive surfaces
WO2001029280A1 (en) 1999-10-15 2001-04-26 Asm America, Inc. Deposition of transition metal carbides
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
KR20010075977A (ko) 2000-01-21 2001-08-11 윤덕용 부가 단량체 단일선구물질을 이용한 13 족 질화물 박막의제조방법
WO2001066832A2 (en) 2000-03-07 2001-09-13 Asm America, Inc. Graded thin films
US6482733B2 (en) * 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
US6355561B1 (en) * 2000-11-21 2002-03-12 Micron Technology, Inc. ALD method to improve surface coverage

Also Published As

Publication number Publication date
FI20010539A0 (sv) 2001-03-16
US6706115B2 (en) 2004-03-16
US20020182320A1 (en) 2002-12-05

Similar Documents

Publication Publication Date Title
FI109770B (sv) Förfarande för framställning av metallnitridtunnfilmer
TWI816783B (zh) 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
US7144806B1 (en) ALD of tantalum using a hydride reducing agent
US9012334B2 (en) Formation of a tantalum-nitride layer
CN109423618A (zh) 用于在基材和相关半导体器件结构的介电表面上沉积钼金属膜的方法
US7501343B2 (en) Formation of boride barrier layers using chemisorption techniques
US20060182885A1 (en) Preparation of metal silicon nitride films via cyclic deposition
US20130078454A1 (en) Metal-Aluminum Alloy Films From Metal Amidinate Precursors And Aluminum Precursors
JP5639055B2 (ja) タンタル含有層を基板上に形成する方法
TW201309713A (zh) 雜配位吡咯醛亞胺前驅物
EP1771595A1 (en) Copper (ii) complexes for deposition of copper films by atomic layer deposition
US20090130466A1 (en) Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor
KR20220161180A (ko) 재료를 증착하는 방법 및 반도체 소자
CN115735265A (zh) 导电氮化物膜的成核方法
WO2021087069A1 (en) Methods to grow low resistivity metal containing films
TW202214897A (zh) 用於形成包括過渡金屬層之結構的方法及系統
KR20240008886A (ko) Ru(I) 전구체를 사용한 루테늄 막의 선택적 증착
KR20210056847A (ko) 니오븀 질화물 박막의 형성 방법
KR20040102754A (ko) 원자층 적층 방법 및 이를 이용한 박막 형성 방법
Arkles et al. Ulllted States Patent [19][11] Patent Number: 6,090,709
WO2002063677A2 (en) Formation of a tantalum-nitride layer

Legal Events

Date Code Title Description
MM Patent lapsed