US6974766B1
(en)
|
1998-10-01 |
2005-12-13 |
Applied Materials, Inc. |
In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
|
US6727169B1
(en)
*
|
1999-10-15 |
2004-04-27 |
Asm International, N.V. |
Method of making conformal lining layers for damascene metallization
|
US6319766B1
(en)
|
2000-02-22 |
2001-11-20 |
Applied Materials, Inc. |
Method of tantalum nitride deposition by tantalum oxide densification
|
US6620723B1
(en)
|
2000-06-27 |
2003-09-16 |
Applied Materials, Inc. |
Formation of boride barrier layers using chemisorption techniques
|
US6551929B1
(en)
|
2000-06-28 |
2003-04-22 |
Applied Materials, Inc. |
Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
|
US7101795B1
(en)
*
|
2000-06-28 |
2006-09-05 |
Applied Materials, Inc. |
Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
|
US7964505B2
(en)
|
2005-01-19 |
2011-06-21 |
Applied Materials, Inc. |
Atomic layer deposition of tungsten materials
|
US7405158B2
(en)
|
2000-06-28 |
2008-07-29 |
Applied Materials, Inc. |
Methods for depositing tungsten layers employing atomic layer deposition techniques
|
US7732327B2
(en)
|
2000-06-28 |
2010-06-08 |
Applied Materials, Inc. |
Vapor deposition of tungsten materials
|
US6936538B2
(en)
|
2001-07-16 |
2005-08-30 |
Applied Materials, Inc. |
Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
|
US6596643B2
(en)
|
2001-05-07 |
2003-07-22 |
Applied Materials, Inc. |
CVD TiSiN barrier for copper integration
|
US6849545B2
(en)
*
|
2001-06-20 |
2005-02-01 |
Applied Materials, Inc. |
System and method to form a composite film stack utilizing sequential deposition techniques
|
US7211144B2
(en)
|
2001-07-13 |
2007-05-01 |
Applied Materials, Inc. |
Pulsed nucleation deposition of tungsten layers
|
JP2005518088A
(ja)
*
|
2001-07-16 |
2005-06-16 |
アプライド マテリアルズ インコーポレイテッド |
タングステン複合膜の形成
|
US20030017697A1
(en)
*
|
2001-07-19 |
2003-01-23 |
Kyung-In Choi |
Methods of forming metal layers using metallic precursors
|
US7098131B2
(en)
*
|
2001-07-19 |
2006-08-29 |
Samsung Electronics Co., Ltd. |
Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
|
US9051641B2
(en)
|
2001-07-25 |
2015-06-09 |
Applied Materials, Inc. |
Cobalt deposition on barrier surfaces
|
US20090004850A1
(en)
|
2001-07-25 |
2009-01-01 |
Seshadri Ganguli |
Process for forming cobalt and cobalt silicide materials in tungsten contact applications
|
US8110489B2
(en)
|
2001-07-25 |
2012-02-07 |
Applied Materials, Inc. |
Process for forming cobalt-containing materials
|
JP4178776B2
(ja)
*
|
2001-09-03 |
2008-11-12 |
東京エレクトロン株式会社 |
成膜方法
|
US6718126B2
(en)
|
2001-09-14 |
2004-04-06 |
Applied Materials, Inc. |
Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
|
TW589684B
(en)
*
|
2001-10-10 |
2004-06-01 |
Applied Materials Inc |
Method for depositing refractory metal layers employing sequential deposition techniques
|
US7780785B2
(en)
|
2001-10-26 |
2010-08-24 |
Applied Materials, Inc. |
Gas delivery apparatus for atomic layer deposition
|
US6916398B2
(en)
*
|
2001-10-26 |
2005-07-12 |
Applied Materials, Inc. |
Gas delivery apparatus and method for atomic layer deposition
|
KR20030043380A
(ko)
*
|
2001-11-28 |
2003-06-02 |
주식회사 하이닉스반도체 |
반도체 소자의 캐패시터 제조방법
|
US6773507B2
(en)
|
2001-12-06 |
2004-08-10 |
Applied Materials, Inc. |
Apparatus and method for fast-cycle atomic layer deposition
|
US7081271B2
(en)
|
2001-12-07 |
2006-07-25 |
Applied Materials, Inc. |
Cyclical deposition of refractory metal silicon nitride
|
US6939801B2
(en)
*
|
2001-12-21 |
2005-09-06 |
Applied Materials, Inc. |
Selective deposition of a barrier layer on a dielectric material
|
US6809026B2
(en)
|
2001-12-21 |
2004-10-26 |
Applied Materials, Inc. |
Selective deposition of a barrier layer on a metal film
|
US6998014B2
(en)
|
2002-01-26 |
2006-02-14 |
Applied Materials, Inc. |
Apparatus and method for plasma assisted deposition
|
US6911391B2
(en)
|
2002-01-26 |
2005-06-28 |
Applied Materials, Inc. |
Integration of titanium and titanium nitride layers
|
US6827978B2
(en)
|
2002-02-11 |
2004-12-07 |
Applied Materials, Inc. |
Deposition of tungsten films
|
US6833161B2
(en)
|
2002-02-26 |
2004-12-21 |
Applied Materials, Inc. |
Cyclical deposition of tungsten nitride for metal oxide gate electrode
|
US6972267B2
(en)
|
2002-03-04 |
2005-12-06 |
Applied Materials, Inc. |
Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
|
US6720027B2
(en)
|
2002-04-08 |
2004-04-13 |
Applied Materials, Inc. |
Cyclical deposition of a variable content titanium silicon nitride layer
|
US6846516B2
(en)
|
2002-04-08 |
2005-01-25 |
Applied Materials, Inc. |
Multiple precursor cyclical deposition system
|
US7279432B2
(en)
|
2002-04-16 |
2007-10-09 |
Applied Materials, Inc. |
System and method for forming an integrated barrier layer
|
US7374617B2
(en)
*
|
2002-04-25 |
2008-05-20 |
Micron Technology, Inc. |
Atomic layer deposition methods and chemical vapor deposition methods
|
US6858547B2
(en)
|
2002-06-14 |
2005-02-22 |
Applied Materials, Inc. |
System and method for forming a gate dielectric
|
US20030232501A1
(en)
|
2002-06-14 |
2003-12-18 |
Kher Shreyas S. |
Surface pre-treatment for enhancement of nucleation of high dielectric constant materials
|
US7067439B2
(en)
*
|
2002-06-14 |
2006-06-27 |
Applied Materials, Inc. |
ALD metal oxide deposition process using direct oxidation
|
US20040013803A1
(en)
*
|
2002-07-16 |
2004-01-22 |
Applied Materials, Inc. |
Formation of titanium nitride films using a cyclical deposition process
|
US7186385B2
(en)
|
2002-07-17 |
2007-03-06 |
Applied Materials, Inc. |
Apparatus for providing gas to a processing chamber
|
US6772072B2
(en)
|
2002-07-22 |
2004-08-03 |
Applied Materials, Inc. |
Method and apparatus for monitoring solid precursor delivery
|
US6967159B2
(en)
*
|
2002-08-28 |
2005-11-22 |
Micron Technology, Inc. |
Systems and methods for forming refractory metal nitride layers using organic amines
|
US6794284B2
(en)
*
|
2002-08-28 |
2004-09-21 |
Micron Technology, Inc. |
Systems and methods for forming refractory metal nitride layers using disilazanes
|
US6995081B2
(en)
*
|
2002-08-28 |
2006-02-07 |
Micron Technology, Inc. |
Systems and methods for forming tantalum silicide layers
|
US6821563B2
(en)
|
2002-10-02 |
2004-11-23 |
Applied Materials, Inc. |
Gas distribution system for cyclical layer deposition
|
US7262133B2
(en)
*
|
2003-01-07 |
2007-08-28 |
Applied Materials, Inc. |
Enhancement of copper line reliability using thin ALD tan film to cap the copper line
|
US20040144980A1
(en)
*
|
2003-01-27 |
2004-07-29 |
Ahn Kie Y. |
Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers
|
US6753248B1
(en)
|
2003-01-27 |
2004-06-22 |
Applied Materials, Inc. |
Post metal barrier/adhesion film
|
US20040175926A1
(en)
*
|
2003-03-07 |
2004-09-09 |
Advanced Micro Devices, Inc. |
Method for manufacturing a semiconductor component having a barrier-lined opening
|
US7378129B2
(en)
*
|
2003-08-18 |
2008-05-27 |
Micron Technology, Inc. |
Atomic layer deposition methods of forming conductive metal nitride comprising layers
|
US20050056219A1
(en)
*
|
2003-09-16 |
2005-03-17 |
Tokyo Electron Limited |
Formation of a metal-containing film by sequential gas exposure in a batch type processing system
|
US20050067103A1
(en)
|
2003-09-26 |
2005-03-31 |
Applied Materials, Inc. |
Interferometer endpoint monitoring device
|
US20050153571A1
(en)
*
|
2003-11-17 |
2005-07-14 |
Yoshihide Senzaki |
Nitridation of high-k dielectric films
|
US20050252449A1
(en)
|
2004-05-12 |
2005-11-17 |
Nguyen Son T |
Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
|
US8323754B2
(en)
|
2004-05-21 |
2012-12-04 |
Applied Materials, Inc. |
Stabilization of high-k dielectric materials
|
US8119210B2
(en)
|
2004-05-21 |
2012-02-21 |
Applied Materials, Inc. |
Formation of a silicon oxynitride layer on a high-k dielectric material
|
US7241686B2
(en)
|
2004-07-20 |
2007-07-10 |
Applied Materials, Inc. |
Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
|
US7588988B2
(en)
|
2004-08-31 |
2009-09-15 |
Micron Technology, Inc. |
Method of forming apparatus having oxide films formed using atomic layer deposition
|
US7235501B2
(en)
|
2004-12-13 |
2007-06-26 |
Micron Technology, Inc. |
Lanthanum hafnium oxide dielectrics
|
US7687409B2
(en)
|
2005-03-29 |
2010-03-30 |
Micron Technology, Inc. |
Atomic layer deposited titanium silicon oxide films
|
CN101213322A
(zh)
*
|
2005-06-29 |
2008-07-02 |
乔治洛德方法研究和开发液化空气有限公司 |
三元膜的沉积方法
|
DE102005033579A1
(de)
*
|
2005-07-19 |
2007-01-25 |
H.C. Starck Gmbh |
Verfahren zur Herstellung dünner Hafnium- oder Zirkonnitrid-Schichten
|
US7927948B2
(en)
|
2005-07-20 |
2011-04-19 |
Micron Technology, Inc. |
Devices with nanocrystals and methods of formation
|
US7402534B2
(en)
|
2005-08-26 |
2008-07-22 |
Applied Materials, Inc. |
Pretreatment processes within a batch ALD reactor
|
US8110469B2
(en)
|
2005-08-30 |
2012-02-07 |
Micron Technology, Inc. |
Graded dielectric layers
|
US7521356B2
(en)
*
|
2005-09-01 |
2009-04-21 |
Micron Technology, Inc. |
Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds
|
US8993055B2
(en)
|
2005-10-27 |
2015-03-31 |
Asm International N.V. |
Enhanced thin film deposition
|
CN101448977B
(zh)
|
2005-11-04 |
2010-12-15 |
应用材料股份有限公司 |
用于等离子体增强的原子层沉积的设备和工艺
|
US7592251B2
(en)
|
2005-12-08 |
2009-09-22 |
Micron Technology, Inc. |
Hafnium tantalum titanium oxide films
|
US7798096B2
(en)
|
2006-05-05 |
2010-09-21 |
Applied Materials, Inc. |
Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
|
US7759747B2
(en)
*
|
2006-08-31 |
2010-07-20 |
Micron Technology, Inc. |
Tantalum aluminum oxynitride high-κ dielectric
|
US7521379B2
(en)
|
2006-10-09 |
2009-04-21 |
Applied Materials, Inc. |
Deposition and densification process for titanium nitride barrier layers
|
US8268409B2
(en)
*
|
2006-10-25 |
2012-09-18 |
Asm America, Inc. |
Plasma-enhanced deposition of metal carbide films
|
US8158526B2
(en)
|
2006-10-30 |
2012-04-17 |
Applied Materials, Inc. |
Endpoint detection for photomask etching
|
US7611751B2
(en)
|
2006-11-01 |
2009-11-03 |
Asm America, Inc. |
Vapor deposition of metal carbide films
|
US20080268642A1
(en)
*
|
2007-04-20 |
2008-10-30 |
Kazutaka Yanagita |
Deposition of transition metal carbide containing films
|
US7713874B2
(en)
*
|
2007-05-02 |
2010-05-11 |
Asm America, Inc. |
Periodic plasma annealing in an ALD-type process
|
US8017182B2
(en)
*
|
2007-06-21 |
2011-09-13 |
Asm International N.V. |
Method for depositing thin films by mixed pulsed CVD and ALD
|
US7638170B2
(en)
|
2007-06-21 |
2009-12-29 |
Asm International N.V. |
Low resistivity metal carbonitride thin film deposition by atomic layer deposition
|
US7678298B2
(en)
|
2007-09-25 |
2010-03-16 |
Applied Materials, Inc. |
Tantalum carbide nitride materials by vapor deposition processes
|
US7824743B2
(en)
|
2007-09-28 |
2010-11-02 |
Applied Materials, Inc. |
Deposition processes for titanium nitride barrier and aluminum
|
US7816278B2
(en)
*
|
2008-03-28 |
2010-10-19 |
Tokyo Electron Limited |
In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
|
US7659158B2
(en)
|
2008-03-31 |
2010-02-09 |
Applied Materials, Inc. |
Atomic layer deposition processes for non-volatile memory devices
|
US20090315093A1
(en)
*
|
2008-04-16 |
2009-12-24 |
Asm America, Inc. |
Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds
|
WO2009132207A2
(en)
|
2008-04-25 |
2009-10-29 |
Asm International N.V. |
Synthesis and use of precursors for ald of tellurium and selenium thin films
|
US7666474B2
(en)
|
2008-05-07 |
2010-02-23 |
Asm America, Inc. |
Plasma-enhanced pulsed deposition of metal carbide films
|
US8491967B2
(en)
|
2008-09-08 |
2013-07-23 |
Applied Materials, Inc. |
In-situ chamber treatment and deposition process
|
US20100062149A1
(en)
|
2008-09-08 |
2010-03-11 |
Applied Materials, Inc. |
Method for tuning a deposition rate during an atomic layer deposition process
|
US8146896B2
(en)
|
2008-10-31 |
2012-04-03 |
Applied Materials, Inc. |
Chemical precursor ampoule for vapor deposition processes
|
US20100136313A1
(en)
*
|
2008-12-01 |
2010-06-03 |
Asm Japan K.K. |
Process for forming high resistivity thin metallic film
|
US9315896B2
(en)
|
2009-10-26 |
2016-04-19 |
Asm Ip Holding B.V. |
Synthesis and use of precursors for ALD of group VA element containing thin films
|
US8778204B2
(en)
|
2010-10-29 |
2014-07-15 |
Applied Materials, Inc. |
Methods for reducing photoresist interference when monitoring a target layer in a plasma process
|
US8961804B2
(en)
|
2011-10-25 |
2015-02-24 |
Applied Materials, Inc. |
Etch rate detection for photomask etching
|
US8808559B2
(en)
|
2011-11-22 |
2014-08-19 |
Applied Materials, Inc. |
Etch rate detection for reflective multi-material layers etching
|
US8900469B2
(en)
|
2011-12-19 |
2014-12-02 |
Applied Materials, Inc. |
Etch rate detection for anti-reflective coating layer and absorber layer etching
|
US8815344B2
(en)
*
|
2012-03-14 |
2014-08-26 |
Applied Materials, Inc. |
Selective atomic layer depositions
|
US9805939B2
(en)
|
2012-10-12 |
2017-10-31 |
Applied Materials, Inc. |
Dual endpoint detection for advanced phase shift and binary photomasks
|
US8778574B2
(en)
|
2012-11-30 |
2014-07-15 |
Applied Materials, Inc. |
Method for etching EUV material layers utilized to form a photomask
|
US9412602B2
(en)
|
2013-03-13 |
2016-08-09 |
Asm Ip Holding B.V. |
Deposition of smooth metal nitride films
|
US8841182B1
(en)
|
2013-03-14 |
2014-09-23 |
Asm Ip Holding B.V. |
Silane and borane treatments for titanium carbide films
|
US8846550B1
(en)
|
2013-03-14 |
2014-09-30 |
Asm Ip Holding B.V. |
Silane or borane treatment of metal thin films
|
US9460932B2
(en)
|
2013-11-11 |
2016-10-04 |
Applied Materials, Inc. |
Surface poisoning using ALD for high selectivity deposition of high aspect ratio features
|
US9178152B2
(en)
|
2013-12-23 |
2015-11-03 |
Intermolecular, Inc. |
Metal organic chemical vapor deposition of embedded resistors for ReRAM cells
|
US9243321B2
(en)
|
2013-12-30 |
2016-01-26 |
Intermolecular, Inc. |
Ternary metal nitride formation by annealing constituent layers
|
US9394609B2
(en)
|
2014-02-13 |
2016-07-19 |
Asm Ip Holding B.V. |
Atomic layer deposition of aluminum fluoride thin films
|
US10643925B2
(en)
|
2014-04-17 |
2020-05-05 |
Asm Ip Holding B.V. |
Fluorine-containing conductive films
|
US10002936B2
(en)
|
2014-10-23 |
2018-06-19 |
Asm Ip Holding B.V. |
Titanium aluminum and tantalum aluminum thin films
|
US9941425B2
(en)
|
2015-10-16 |
2018-04-10 |
Asm Ip Holdings B.V. |
Photoactive devices and materials
|
US9786492B2
(en)
|
2015-11-12 |
2017-10-10 |
Asm Ip Holding B.V. |
Formation of SiOCN thin films
|
US9786491B2
(en)
|
2015-11-12 |
2017-10-10 |
Asm Ip Holding B.V. |
Formation of SiOCN thin films
|
CN105669982B
(zh)
*
|
2016-01-22 |
2018-08-21 |
中国人民解放军国防科学技术大学 |
一种有机金属聚合物复相陶瓷先驱体及其制备方法与应用
|
CN105669983B
(zh)
*
|
2016-01-22 |
2019-02-22 |
中国人民解放军国防科学技术大学 |
一种含锆有机金属聚合物陶瓷先驱体及其制备方法与应用
|
KR102378021B1
(ko)
|
2016-05-06 |
2022-03-23 |
에이에스엠 아이피 홀딩 비.브이. |
SiOC 박막의 형성
|
KR20180038823A
(ko)
*
|
2016-10-07 |
2018-04-17 |
삼성전자주식회사 |
유기 금속 전구체, 이를 이용한 막 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
|
US10186420B2
(en)
|
2016-11-29 |
2019-01-22 |
Asm Ip Holding B.V. |
Formation of silicon-containing thin films
|
US10619242B2
(en)
*
|
2016-12-02 |
2020-04-14 |
Asm Ip Holding B.V. |
Atomic layer deposition of rhenium containing thin films
|
US10847529B2
(en)
|
2017-04-13 |
2020-11-24 |
Asm Ip Holding B.V. |
Substrate processing method and device manufactured by the same
|
US10504901B2
(en)
|
2017-04-26 |
2019-12-10 |
Asm Ip Holding B.V. |
Substrate processing method and device manufactured using the same
|
JP7249952B2
(ja)
|
2017-05-05 |
2023-03-31 |
エーエスエム アイピー ホールディング ビー.ブイ. |
酸素含有薄膜の制御された形成のためのプラズマ増強堆積プロセス
|
US10236517B2
(en)
*
|
2017-08-16 |
2019-03-19 |
GM Global Technology Operations LLC |
Method for manufacturing and cleaning a stainless steel fuel cell bipolar plate
|
US10381315B2
(en)
|
2017-11-16 |
2019-08-13 |
Samsung Electronics Co., Ltd. |
Method and system for providing a reverse-engineering resistant hardware embedded security module
|
US10689405B2
(en)
|
2017-11-30 |
2020-06-23 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Titanium-containing film forming compositions for vapor deposition of titanium-containing films
|
US10584039B2
(en)
|
2017-11-30 |
2020-03-10 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Titanium-containing film forming compositions for vapor deposition of titanium-containing films
|
TWI761636B
(zh)
|
2017-12-04 |
2022-04-21 |
荷蘭商Asm Ip控股公司 |
電漿增強型原子層沉積製程及沉積碳氧化矽薄膜的方法
|
KR102449895B1
(ko)
|
2018-05-18 |
2022-09-30 |
삼성전자주식회사 |
반도체 장치와 그 제조 방법
|
US11021793B2
(en)
|
2018-05-31 |
2021-06-01 |
L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude |
Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films
|
KR102355507B1
(ko)
*
|
2018-11-14 |
2022-01-27 |
(주)디엔에프 |
몰리브덴 함유 박막의 제조방법 및 이로부터 제조된 몰리브덴함유 박막
|
TW202405220A
(zh)
*
|
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*
|
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|
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*
|
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|
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(ko)
|
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|
US20230399743A1
(en)
*
|
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