ES8606525A1 - Procedimiento y aparato de chapado o ataque quimico de un substrato utilizando un liquido de tratamiento y un haz energetico, tal como un laser. - Google Patents

Procedimiento y aparato de chapado o ataque quimico de un substrato utilizando un liquido de tratamiento y un haz energetico, tal como un laser.

Info

Publication number
ES8606525A1
ES8606525A1 ES533329A ES533329A ES8606525A1 ES 8606525 A1 ES8606525 A1 ES 8606525A1 ES 533329 A ES533329 A ES 533329A ES 533329 A ES533329 A ES 533329A ES 8606525 A1 ES8606525 A1 ES 8606525A1
Authority
ES
Spain
Prior art keywords
substrate
additive
chemical process
laser beam
subtractive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES533329A
Other languages
English (en)
Other versions
ES533329A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of ES533329A0 publication Critical patent/ES533329A0/es
Publication of ES8606525A1 publication Critical patent/ES8606525A1/es
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • C25D5/024Electroplating of selected surface areas using locally applied electromagnetic radiation, e.g. lasers
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • C25D5/026Electroplating of selected surface areas using locally applied jets of electrolyte
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/02Etching
    • C25F3/14Etching locally
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/068Apparatus for etching printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing the conductive pattern
    • H05K3/241Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electroplating Methods And Accessories (AREA)
  • ing And Chemical Polishing (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Chemically Coating (AREA)
  • Weting (AREA)

Abstract

PROCEDIMIENTO Y APARATO DE CHAPADO O ATAQUE QUIMICO DE UN SUSTRATO UTILIZANDO UN LIQUIDO DE TRATAMIENTO Y UN HAZ ENERGETICO, TAL COMO UN LASER. CONSISTE EN DIRIGIR EL HAZ DE ENERGIA HACIA EL SUSTRATO PARA CALENTAR UN PUNTO DEL MISMO, HACIA EL CUAL SE DIRIGE SIMULTANEAMENTE UN CHORRO DEL LIQUIDO DE TRATAMIENTO, SIENDO COLINEALES EL HAZ Y EL CHORRO, EN EL CUAL EL DIAMETRO DEL HAZ Y EL DIAMETRO DEL CHORRO SON SIMILARES Y EL CHORRO ACTUA COMO GUIA DE ONDAS PARA EL HAZ. CONSTA DE: UNA BOQUILLA (20) DE CHORRO (21) PARA EMITIRLO HACIA EL SUSTRATO; UNA LENTE (43) QUE ENFOCA EL HAZ (44) DE ENERGIA EN EL CENTRO DE LA BOQUILLA DE CHORRO, PROPAGANDOSE EL HAZ DE ENERGIA A TRAVES DE LA LENTE Y LA BOQUILLA DE CHORRO HACIA EL SUSTRATO.
ES533329A 1983-06-13 1984-06-12 Procedimiento y aparato de chapado o ataque quimico de un substrato utilizando un liquido de tratamiento y un haz energetico, tal como un laser. Expired ES8606525A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/504,016 US4497692A (en) 1983-06-13 1983-06-13 Laser-enhanced jet-plating and jet-etching: high-speed maskless patterning method

Publications (2)

Publication Number Publication Date
ES533329A0 ES533329A0 (es) 1986-04-01
ES8606525A1 true ES8606525A1 (es) 1986-04-01

Family

ID=24004519

Family Applications (1)

Application Number Title Priority Date Filing Date
ES533329A Expired ES8606525A1 (es) 1983-06-13 1984-06-12 Procedimiento y aparato de chapado o ataque quimico de un substrato utilizando un liquido de tratamiento y un haz energetico, tal como un laser.

Country Status (8)

Country Link
US (1) US4497692A (es)
EP (1) EP0128401B1 (es)
JP (1) JPS6122633A (es)
AT (1) ATE31087T1 (es)
CA (1) CA1259947A (es)
DE (1) DE3467779D1 (es)
ES (1) ES8606525A1 (es)
IE (1) IE55633B1 (es)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0261296B1 (fr) * 1986-09-25 1992-07-22 Laude, Lucien Diégo Appareillage pour le dépôt électrolytique ponctuel assisté par laser de métaux sur des solides
JPH01149324A (ja) * 1987-12-04 1989-06-12 Yazaki Corp 高圧ケーブルの製造方法
JP2585784B2 (ja) * 1989-02-03 1997-02-26 株式会社東芝 自動現像装置および方法
US5292418A (en) * 1991-03-08 1994-03-08 Mitsubishi Denki Kabushiki Kaisha Local laser plating apparatus
JP2896726B2 (ja) * 1992-03-30 1999-05-31 セイコーインスツルメンツ株式会社 微細加工装置
DE4229399C2 (de) * 1992-09-03 1999-05-27 Deutsch Zentr Luft & Raumfahrt Verfahren und Vorrichtung zum Herstellen einer Funktionsstruktur eines Halbleiterbauelements
DE4408660A1 (de) * 1993-10-26 1995-04-27 Bayer Ag Mischungen mit selbstschmierenden Eigenschaften
US5641391A (en) * 1995-05-15 1997-06-24 Hunter; Ian W. Three dimensional microfabrication by localized electrodeposition and etching
US5536388A (en) * 1995-06-02 1996-07-16 International Business Machines Corporation Vertical electroetch tool nozzle and method
US6284108B1 (en) 1998-08-31 2001-09-04 Louis DiFrancesco Method and apparatus for momentum plating
US8110247B2 (en) * 1998-09-30 2012-02-07 Optomec Design Company Laser processing for heat-sensitive mesoscale deposition of oxygen-sensitive materials
US20050156991A1 (en) * 1998-09-30 2005-07-21 Optomec Design Company Maskless direct write of copper using an annular aerosol jet
US7294366B2 (en) * 1998-09-30 2007-11-13 Optomec Design Company Laser processing for heat-sensitive mesoscale deposition
US7938079B2 (en) * 1998-09-30 2011-05-10 Optomec Design Company Annular aerosol jet deposition using an extended nozzle
US6636676B1 (en) * 1998-09-30 2003-10-21 Optomec Design Company Particle guidance system
US7045015B2 (en) 1998-09-30 2006-05-16 Optomec Design Company Apparatuses and method for maskless mesoscale material deposition
US7108894B2 (en) * 1998-09-30 2006-09-19 Optomec Design Company Direct Write™ System
US20030020768A1 (en) * 1998-09-30 2003-01-30 Renn Michael J. Direct write TM system
US20010054706A1 (en) * 1999-07-19 2001-12-27 Joseph A. Levert Compositions and processes for spin etch planarization
DE19963824A1 (de) * 1999-12-30 2001-07-19 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Bearbeiten von Halbleitermaterial
KR100790621B1 (ko) * 2000-06-13 2007-12-31 엘리먼트 씩스 (프로덕션) (피티와이) 리미티드 복합 다이아몬드 콤팩트
US6699356B2 (en) 2001-08-17 2004-03-02 Applied Materials, Inc. Method and apparatus for chemical-mechanical jet etching of semiconductor structures
US6683277B1 (en) * 2002-12-20 2004-01-27 Osram Opto Semiconductors Laser ablation nozzle assembly
JP4521228B2 (ja) * 2003-07-28 2010-08-11 正也 市村 光析出による金メッキ法及び金メッキ膜形成装置
US20080013299A1 (en) * 2004-12-13 2008-01-17 Optomec, Inc. Direct Patterning for EMI Shielding and Interconnects Using Miniature Aerosol Jet and Aerosol Jet Array
US7938341B2 (en) * 2004-12-13 2011-05-10 Optomec Design Company Miniature aerosol jet and aerosol jet array
US7674671B2 (en) 2004-12-13 2010-03-09 Optomec Design Company Aerodynamic jetting of aerosolized fluids for fabrication of passive structures
US8529738B2 (en) * 2005-02-08 2013-09-10 The Trustees Of Columbia University In The City Of New York In situ plating and etching of materials covered with a surface film
US8496799B2 (en) * 2005-02-08 2013-07-30 The Trustees Of Columbia University In The City Of New York Systems and methods for in situ annealing of electro- and electroless platings during deposition
KR20080005947A (ko) * 2005-04-08 2008-01-15 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 도금조 및 에칭조를 모니터링하기 위한 시스템 및 방법
JP4844715B2 (ja) * 2005-08-25 2011-12-28 澁谷工業株式会社 ハイブリッドレーザ加工装置
WO2007027907A2 (en) * 2005-09-02 2007-03-08 The Trustees Of Columbia University In The City Of New York A system and method for obtaining anisotropic etching of patterned substrates
CN100414002C (zh) * 2005-10-10 2008-08-27 上海工程技术大学 高速电喷镀装置
US20070154634A1 (en) * 2005-12-15 2007-07-05 Optomec Design Company Method and Apparatus for Low-Temperature Plasma Sintering
DE102006003606A1 (de) * 2006-01-25 2007-07-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Strukturieren einer Oberflächenschicht
JP5017882B2 (ja) * 2006-02-22 2012-09-05 澁谷工業株式会社 ハイブリッドレーザ加工方法
DE102006030588A1 (de) * 2006-07-03 2008-01-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Flüssigkeitsstrahlgeführtes Ätzverfahren zum Materialabtrag an Festkörpern sowie dessen Verwendung
CN100388997C (zh) * 2006-09-18 2008-05-21 南京航空航天大学 喷射液束电解-激光复合加工方法及其装置
JP5185948B2 (ja) * 2006-12-06 2013-04-17 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク メッキ及びエッチング浴組成をスクリーニングするマイクロ流体システム及び方法
US8530784B2 (en) * 2007-02-01 2013-09-10 Orbotech Ltd. Method and system of machining using a beam of photons
US20100310630A1 (en) * 2007-04-27 2010-12-09 Technische Universitat Braunschweig Coated surface for cell culture
TWI482662B (zh) 2007-08-30 2015-05-01 Optomec Inc 機械上一體式及緊密式耦合之列印頭以及噴霧源
TWI538737B (zh) * 2007-08-31 2016-06-21 阿普托麥克股份有限公司 材料沉積總成
TW200918325A (en) * 2007-08-31 2009-05-01 Optomec Inc AEROSOL JET® printing system for photovoltaic applications
US8887658B2 (en) * 2007-10-09 2014-11-18 Optomec, Inc. Multiple sheath multiple capillary aerosol jet
FR2941156A1 (fr) * 2009-01-19 2010-07-23 Cummins Filtration Dispositif de filtration pour liquide circulant dans un moteur ou un equipement hydraulique, comprenant des moyens de chauffage du liquide jouxtant les moyens de filtration
JP4961468B2 (ja) * 2009-10-29 2012-06-27 三星ダイヤモンド工業株式会社 レーザー加工方法、被加工物の分割方法およびレーザー加工装置
US8985050B2 (en) * 2009-11-05 2015-03-24 The Trustees Of Columbia University In The City Of New York Substrate laser oxide removal process followed by electro or immersion plating
US9025285B1 (en) * 2009-12-16 2015-05-05 Magnecomp Corporation Low resistance interface metal for disk drive suspension component grounding
US9583125B1 (en) 2009-12-16 2017-02-28 Magnecomp Corporation Low resistance interface metal for disk drive suspension component grounding
JP5220914B2 (ja) * 2011-05-25 2013-06-26 株式会社スギノマシン レーザー加工装置
US8764515B2 (en) * 2012-05-14 2014-07-01 United Technologies Corporation Component machining method and assembly
CN103572341B (zh) * 2013-09-23 2016-01-20 江苏大学 激光光管电极的电化学复合沉积制造方法与装置
CN103590080A (zh) * 2013-11-28 2014-02-19 铜陵学院 一种激光强化喷射电沉积快速成形加工装置及方法
US8859988B1 (en) * 2014-05-30 2014-10-14 Jens Guenter Gaebelein Method for coupling a laser beam into a liquid-jet
US10092980B1 (en) 2014-05-30 2018-10-09 Avonisys Ag Method for coupling a laser beam into a liquid-jet
KR102444204B1 (ko) 2015-02-10 2022-09-19 옵토멕 인코포레이티드 에어로졸의 비행 중 경화에 의해 3차원 구조를 제조하는 방법
DE102015224115B4 (de) * 2015-12-02 2021-04-01 Avonisys Ag Laserstrahl-bearbeitungsvorrichtung mit einer einkoppelvorrichtung zum einkoppeln eines fokussierten laserstrahls in einen flüssigkeitsstrahl
US10632746B2 (en) 2017-11-13 2020-04-28 Optomec, Inc. Shuttering of aerosol streams
EP3624571A1 (en) * 2018-09-14 2020-03-18 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO A process for the manufacturing of printed conductive tracks on an object and 3d printed electronics
CN113512741B (zh) * 2020-04-10 2022-11-01 中国科学院宁波材料技术与工程研究所 激光冲击波辅助的电化学加工装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2846346A (en) * 1954-03-26 1958-08-05 Philco Corp Semiconductor device
US2799637A (en) * 1954-12-22 1957-07-16 Philco Corp Method for electrolytic etching
US2930949A (en) * 1956-09-25 1960-03-29 Philco Corp Semiconductive device and method of fabrication thereof
US3039515A (en) * 1959-02-24 1962-06-19 Philco Corp Fabrication of semiconductor devices
US3345274A (en) * 1964-04-22 1967-10-03 Westinghouse Electric Corp Method of making oxide film patterns
US3486221A (en) * 1967-06-14 1969-12-30 Sprague Electric Co High energy beam trimming of electrical components
GB1242123A (en) * 1968-11-12 1971-08-11 Nat Res Dev Improvements relating to a method and apparatus for laser beam cutting
US3810829A (en) * 1972-06-28 1974-05-14 Nasa Scanning nozzle plating system
US4042006A (en) * 1973-01-05 1977-08-16 Siemens Aktiengesellschaft Pyrolytic process for producing a band-shaped metal layer on a substrate
US3965328A (en) * 1974-12-19 1976-06-22 Avco Corporation Laser deep cutting process
US4217183A (en) * 1979-05-08 1980-08-12 International Business Machines Corporation Method for locally enhancing electroplating rates
US4283259A (en) * 1979-05-08 1981-08-11 International Business Machines Corporation Method for maskless chemical and electrochemical machining
DE3111402A1 (de) * 1980-03-25 1982-04-29 Walter Winston Duley "verfahren und vorrichtung zur laserstrahl-bearbeitung von werkstuecken"
GB2074074B (en) * 1980-04-17 1984-07-11 Inoue Japax Res Electrical discharge machining with controlled liquid machining medium flow
EP0131367B1 (en) * 1983-05-30 1989-04-05 Inoue-Japax Research Incorporated Method of and apparatus for machining ceramic materials

Also Published As

Publication number Publication date
EP0128401A2 (en) 1984-12-19
ATE31087T1 (de) 1987-12-15
IE841438L (en) 1984-12-13
JPS6122633A (ja) 1986-01-31
US4497692A (en) 1985-02-05
JPH0138372B2 (es) 1989-08-14
ES533329A0 (es) 1986-04-01
DE3467779D1 (en) 1988-01-07
EP0128401A3 (en) 1985-05-15
CA1259947A (en) 1989-09-26
EP0128401B1 (en) 1987-11-25
IE55633B1 (en) 1990-12-05

Similar Documents

Publication Publication Date Title
ES8606525A1 (es) Procedimiento y aparato de chapado o ataque quimico de un substrato utilizando un liquido de tratamiento y un haz energetico, tal como un laser.
ID27485A (id) Peralatan untuk memproduksi ortohidrogen dan/atau parahidrogen
ES8608366A1 (es) Procedimiento para la realizacion de un tratamiento sobre piezas metalicas
AU1790001A (en) Method and apparatus for separating non-metallic materials
JPS54116799A (en) Razor machining method and its device
EP0267667A3 (en) Distributed feedback laser
ES8600100A1 (es) Procedimiento e instalacion de soldadura de puntos, por rayo laser
MA19304A1 (fr) Disositif de production d'energie electrique utilisant et controlant l'energie potentielle de la mer.
JPS5742130A (en) Forming method for minute pattern
JPS51147262A (en) Electronic beam exposure method
ES498563A0 (es) Procedimiento de escarpado por un chorro de oxigeno y soplete multiforme para la utilizacion de este procedimiento.
JPS57198217A (en) Magnetic characteristic improvidng method of directional electrical sheet
JPS5730337A (en) Formation of surface protecting film for semiconductor
ZAHAVI et al. Laser beam technology promoting high speed and selective plating processes[Final Report, Oct. 1982- Sep. 1983]
JPS53134736A (en) Method of plating melted using ultrasonic wave
DK166887A (da) Aktiveringsproces til dannelse af vedhaengende kromelektroaflejringer fra hoejenergi-effektive krombade paa metalunderlag
JPS5233204A (en) Method of calculating distance from chord of rail by means of laser be am
JPS57144510A (en) Structure of end face of optical conductor
DE3377222D1 (en) Selective plating
JPS5217789A (en) High temperature plasma generation method device using laser beams
JPS5232697A (en) Laser oscillation equipment
JPS5450450A (en) Laser welding method
JPS5367004A (en) Fixing method for nozzle blade
JPS5747591A (en) Laser beam focusing device
Zahavi et al. Laser beam technology promoting high speed and selective plating processes

Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19970401