ES495215A0 - Mejoras en la fabricacion de elementos de construccion semi-conductores para la conversion de luz en energia electrica - Google Patents

Mejoras en la fabricacion de elementos de construccion semi-conductores para la conversion de luz en energia electrica

Info

Publication number
ES495215A0
ES495215A0 ES495215A ES495215A ES495215A0 ES 495215 A0 ES495215 A0 ES 495215A0 ES 495215 A ES495215 A ES 495215A ES 495215 A ES495215 A ES 495215A ES 495215 A0 ES495215 A0 ES 495215A0
Authority
ES
Spain
Prior art keywords
light
semi
conversion
manufacture
electrical energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES495215A
Other languages
English (en)
Spanish (es)
Other versions
ES8106073A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
Messerschmitt Bolkow Blohm AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Messerschmitt Bolkow Blohm AG filed Critical Messerschmitt Bolkow Blohm AG
Publication of ES8106073A1 publication Critical patent/ES8106073A1/es
Publication of ES495215A0 publication Critical patent/ES495215A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Luminescent Compositions (AREA)
  • Semiconductor Lasers (AREA)
ES495215A 1979-09-21 1980-09-19 Mejoras en la fabricacion de elementos de construccion semi-conductores para la conversion de luz en energia electrica Granted ES495215A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792938260 DE2938260A1 (de) 1979-09-21 1979-09-21 Halbleiterbauelement fuer die umsetzung von licht in elektrische energie

Publications (2)

Publication Number Publication Date
ES8106073A1 ES8106073A1 (es) 1981-06-16
ES495215A0 true ES495215A0 (es) 1981-06-16

Family

ID=6081491

Family Applications (1)

Application Number Title Priority Date Filing Date
ES495215A Granted ES495215A0 (es) 1979-09-21 1980-09-19 Mejoras en la fabricacion de elementos de construccion semi-conductores para la conversion de luz en energia electrica

Country Status (6)

Country Link
US (1) US4620058A (enExample)
EP (1) EP0025872B1 (enExample)
JP (1) JPS5681981A (enExample)
AT (1) ATE16329T1 (enExample)
DE (1) DE2938260A1 (enExample)
ES (1) ES495215A0 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4270018A (en) * 1979-12-26 1981-05-26 Gibbons James F Amorphous solar cells
JPS56103477A (en) * 1980-01-21 1981-08-18 Hitachi Ltd Photoelectric conversion element
JPS5745980A (en) * 1980-09-02 1982-03-16 Mitsubishi Electric Corp Amorphous solar battery and manufacture thereof
DE3048381C2 (de) * 1980-12-22 1985-09-05 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Dünnschicht-Solarzelle
DE3143513A1 (de) * 1981-11-03 1983-05-19 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Verfahren zur herstellung von photovoltaischen solarzellen
DE3280293D1 (de) * 1981-11-04 1991-02-21 Kanegafuchi Chemical Ind Biegsame photovoltaische einrichtung.
EP0341756B2 (en) * 1981-11-04 1999-06-30 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Flexible photovoltaic device
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
IL67926A (en) * 1982-03-18 1986-04-29 Energy Conversion Devices Inc Photo-voltaic device with radiation reflector means
JPS5955012A (ja) * 1982-09-24 1984-03-29 Mitsubishi Chem Ind Ltd アモルフアスシリコン半導体材料用基板
JPH0680837B2 (ja) * 1983-08-29 1994-10-12 通商産業省工業技術院長 光路を延長した光電変換素子
JPS60117687A (ja) * 1983-11-30 1985-06-25 Meidensha Electric Mfg Co Ltd 太陽電池
JPH0620146B2 (ja) * 1984-04-20 1994-03-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPS60224282A (ja) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPS60222831A (ja) * 1984-04-20 1985-11-07 Nippon Kogaku Kk <Nikon> アルバダ式カメラフアインダ−の視野内表示装置
JPH0693515B2 (ja) * 1984-04-26 1994-11-16 株式会社半導体エネルギー研究所 半導体装置作製方法
US4950614A (en) * 1984-05-15 1990-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of making a tandem type semiconductor photoelectric conversion device
JPS60240167A (ja) * 1984-05-15 1985-11-29 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS60240168A (ja) * 1984-05-15 1985-11-29 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS60240169A (ja) * 1984-05-15 1985-11-29 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPH065780B2 (ja) * 1984-10-17 1994-01-19 工業技術院長 半導体装置の製造方法
JPS6199369A (ja) * 1984-10-22 1986-05-17 Fuji Photo Film Co Ltd 固体撮像素子
US4584427A (en) * 1984-10-22 1986-04-22 Atlantic Richfield Company Thin film solar cell with free tin on tin oxide transparent conductor
JPS61139072A (ja) * 1984-12-11 1986-06-26 Agency Of Ind Science & Technol 光起電力装置の製造方法
JPH0660845B2 (ja) * 1985-09-06 1994-08-10 ミノルタカメラ株式会社 色判別方法
JPS62154780A (ja) * 1985-12-27 1987-07-09 Toshiba Corp イメ−ジセンサ
US4803375A (en) * 1985-12-27 1989-02-07 Kabushiki Kaisha Toshiba Image sensors and methods of manufacturing same including semiconductor layer over entire substrate surface
DE3722198A1 (de) * 1987-07-04 1989-01-12 Semikron Elektronik Gmbh Verfahren zum herstellen von solarzellen
DE3727823A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Tandem-solarmodul
DE58905580D1 (de) * 1988-03-24 1993-10-21 Siemens Ag Verfahren zum Herstellen von polykristallinen Schichten mit grobkristallinem Aufbau für Dünnschichthalbleiterbauelemente wie Solarzellen.
US5238879A (en) * 1988-03-24 1993-08-24 Siemens Aktiengesellschaft Method for the production of polycrystalline layers having granular crystalline structure for thin-film semiconductor components such as solar cells
US5014217A (en) * 1989-02-09 1991-05-07 S C Technology, Inc. Apparatus and method for automatically identifying chemical species within a plasma reactor environment
JPH02306670A (ja) * 1989-05-20 1990-12-20 Sanyo Electric Co Ltd 光起電力装置
JP2740284B2 (ja) * 1989-08-09 1998-04-15 三洋電機株式会社 光起電力素子
US5351255A (en) * 1992-05-12 1994-09-27 North Carolina State University Of Raleigh Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
US5818072A (en) * 1992-05-12 1998-10-06 North Carolina State University Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
JP2648683B2 (ja) * 1992-12-04 1997-09-03 株式会社 半導体エネルギー研究所 半導体装置の作製方法
JP3203078B2 (ja) * 1992-12-09 2001-08-27 三洋電機株式会社 光起電力素子
DE10042733A1 (de) * 2000-08-31 2002-03-28 Inst Physikalische Hochtech Ev Multikristalline laserkristallisierte Silicium-Dünnschicht-Solarzelle auf transparentem Substrat
DE102005019225B4 (de) * 2005-04-20 2009-12-31 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Heterokontaktsolarzelle mit invertierter Schichtstrukturgeometrie
WO2008098407A1 (en) * 2007-02-08 2008-08-21 Suntech Power Co., Ltd Hybrid silicon solar cells and method of fabricating same
US8253010B2 (en) 2007-11-23 2012-08-28 Big Sun Energy Technology Inc. Solar cell with two exposed surfaces of ARC layer disposed at different levels
US8481357B2 (en) * 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5143090A (enExample) * 1974-10-09 1976-04-13 Sony Corp
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4142195A (en) * 1976-03-22 1979-02-27 Rca Corporation Schottky barrier semiconductor device and method of making same
GB2030766A (en) * 1978-09-02 1980-04-10 Plessey Co Ltd Laser treatment of semiconductor material
US4166919A (en) * 1978-09-25 1979-09-04 Rca Corporation Amorphous silicon solar cell allowing infrared transmission

Also Published As

Publication number Publication date
EP0025872B1 (de) 1985-10-30
ES8106073A1 (es) 1981-06-16
US4620058A (en) 1986-10-28
EP0025872A3 (en) 1982-02-10
DE2938260A1 (de) 1981-03-26
JPS5681981A (en) 1981-07-04
JPH0117272B2 (enExample) 1989-03-29
EP0025872A2 (de) 1981-04-01
ATE16329T1 (de) 1985-11-15

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19970203