ES8106073A1 - Mejoras en la fabricacion de elementos de construccion semi-conductores para la conversion de luz en energia electrica - Google Patents
Mejoras en la fabricacion de elementos de construccion semi-conductores para la conversion de luz en energia electricaInfo
- Publication number
- ES8106073A1 ES8106073A1 ES495215A ES495215A ES8106073A1 ES 8106073 A1 ES8106073 A1 ES 8106073A1 ES 495215 A ES495215 A ES 495215A ES 495215 A ES495215 A ES 495215A ES 8106073 A1 ES8106073 A1 ES 8106073A1
- Authority
- ES
- Spain
- Prior art keywords
- conversion
- electrical energy
- semiconductor component
- component part
- solar rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000006243 chemical reaction Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Luminescent Compositions (AREA)
- Semiconductor Lasers (AREA)
Abstract
CELULA FOTOELECTRICA. SOBRE LA CARA EXPUESTA A LA LUZ DE UNA CAPA DE SILICIO AMORFO SE DUPERPONE UNA CAPA MAS DELGADA DE SILICIO POLICRISTALINO QUE ES PARTE COMPONENTE DE UN ELEMENTO CONSTITUIDO POR UNA CAPA DE VIDRIO TRANSPARENTE, UNA CAPA ANTIRREFLECTANTE SEMICONDUCTORA CON ELECTRODOS DE METAL INSERTOS, UNA PELICULA METALICA DELGADA SEMITRANSPARENTE, UNA CAPA DE SILICIO POLICRISTALINO DOPADO, UNA CAPA DE SILICIO AMORFO DEBILMENTE DOPADO, UNA CAPA DE SILICIO AMORFO FUERTEMENTE DOPADO Y UNOS ELECTRODOS DE METAL. COMO VARIACIONES SE PUEDE SITUAR UNA CAPA DE PEGAMENTO BAJO LA PRIMERA CAPA DE VIDRIO, SUPRIMIR EL SILICIO AMORFO FUERTEMENTE DOPADO O PASAR AL ULTIMO LUGAR LA PELICULA METALICA DELGADA.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19792938260 DE2938260A1 (de) | 1979-09-21 | 1979-09-21 | Halbleiterbauelement fuer die umsetzung von licht in elektrische energie |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8106073A1 true ES8106073A1 (es) | 1981-06-16 |
ES495215A0 ES495215A0 (es) | 1981-06-16 |
Family
ID=6081491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES495215A Granted ES495215A0 (es) | 1979-09-21 | 1980-09-19 | Mejoras en la fabricacion de elementos de construccion semi-conductores para la conversion de luz en energia electrica |
Country Status (6)
Country | Link |
---|---|
US (1) | US4620058A (es) |
EP (1) | EP0025872B1 (es) |
JP (1) | JPS5681981A (es) |
AT (1) | ATE16329T1 (es) |
DE (1) | DE2938260A1 (es) |
ES (1) | ES495215A0 (es) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4270018A (en) * | 1979-12-26 | 1981-05-26 | Gibbons James F | Amorphous solar cells |
JPS56103477A (en) * | 1980-01-21 | 1981-08-18 | Hitachi Ltd | Photoelectric conversion element |
JPS5745980A (en) * | 1980-09-02 | 1982-03-16 | Mitsubishi Electric Corp | Amorphous solar battery and manufacture thereof |
DE3048381C2 (de) * | 1980-12-22 | 1985-09-05 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Dünnschicht-Solarzelle |
DE3143513A1 (de) * | 1981-11-03 | 1983-05-19 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Verfahren zur herstellung von photovoltaischen solarzellen |
EP0341756B2 (en) * | 1981-11-04 | 1999-06-30 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Flexible photovoltaic device |
DE3280293D1 (de) * | 1981-11-04 | 1991-02-21 | Kanegafuchi Chemical Ind | Biegsame photovoltaische einrichtung. |
US4379943A (en) * | 1981-12-14 | 1983-04-12 | Energy Conversion Devices, Inc. | Current enhanced photovoltaic device |
IL67926A (en) * | 1982-03-18 | 1986-04-29 | Energy Conversion Devices Inc | Photo-voltaic device with radiation reflector means |
JPS5955012A (ja) * | 1982-09-24 | 1984-03-29 | Mitsubishi Chem Ind Ltd | アモルフアスシリコン半導体材料用基板 |
JPH0680837B2 (ja) * | 1983-08-29 | 1994-10-12 | 通商産業省工業技術院長 | 光路を延長した光電変換素子 |
JPS60117687A (ja) * | 1983-11-30 | 1985-06-25 | Meidensha Electric Mfg Co Ltd | 太陽電池 |
JPS60222831A (ja) * | 1984-04-20 | 1985-11-07 | Nippon Kogaku Kk <Nikon> | アルバダ式カメラフアインダ−の視野内表示装置 |
JPS60224282A (ja) * | 1984-04-20 | 1985-11-08 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JPH0620146B2 (ja) * | 1984-04-20 | 1994-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH0693515B2 (ja) * | 1984-04-26 | 1994-11-16 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
JPS60240168A (ja) * | 1984-05-15 | 1985-11-29 | Semiconductor Energy Lab Co Ltd | 光電変換装置の作製方法 |
JPS60240169A (ja) * | 1984-05-15 | 1985-11-29 | Semiconductor Energy Lab Co Ltd | 光電変換装置の作製方法 |
US4950614A (en) * | 1984-05-15 | 1990-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a tandem type semiconductor photoelectric conversion device |
JPS60240167A (ja) * | 1984-05-15 | 1985-11-29 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JPH065780B2 (ja) * | 1984-10-17 | 1994-01-19 | 工業技術院長 | 半導体装置の製造方法 |
JPS6199369A (ja) * | 1984-10-22 | 1986-05-17 | Fuji Photo Film Co Ltd | 固体撮像素子 |
US4584427A (en) * | 1984-10-22 | 1986-04-22 | Atlantic Richfield Company | Thin film solar cell with free tin on tin oxide transparent conductor |
JPS61139072A (ja) * | 1984-12-11 | 1986-06-26 | Agency Of Ind Science & Technol | 光起電力装置の製造方法 |
JPH0660845B2 (ja) * | 1985-09-06 | 1994-08-10 | ミノルタカメラ株式会社 | 色判別方法 |
JPS62154780A (ja) * | 1985-12-27 | 1987-07-09 | Toshiba Corp | イメ−ジセンサ |
US4803375A (en) * | 1985-12-27 | 1989-02-07 | Kabushiki Kaisha Toshiba | Image sensors and methods of manufacturing same including semiconductor layer over entire substrate surface |
DE3722198A1 (de) * | 1987-07-04 | 1989-01-12 | Semikron Elektronik Gmbh | Verfahren zum herstellen von solarzellen |
DE3727823A1 (de) * | 1987-08-20 | 1989-03-02 | Siemens Ag | Tandem-solarmodul |
DE58905580D1 (de) * | 1988-03-24 | 1993-10-21 | Siemens Ag | Verfahren zum Herstellen von polykristallinen Schichten mit grobkristallinem Aufbau für Dünnschichthalbleiterbauelemente wie Solarzellen. |
US5238879A (en) * | 1988-03-24 | 1993-08-24 | Siemens Aktiengesellschaft | Method for the production of polycrystalline layers having granular crystalline structure for thin-film semiconductor components such as solar cells |
US5014217A (en) * | 1989-02-09 | 1991-05-07 | S C Technology, Inc. | Apparatus and method for automatically identifying chemical species within a plasma reactor environment |
JPH02306670A (ja) * | 1989-05-20 | 1990-12-20 | Sanyo Electric Co Ltd | 光起電力装置 |
JP2740284B2 (ja) * | 1989-08-09 | 1998-04-15 | 三洋電機株式会社 | 光起電力素子 |
US5351255A (en) * | 1992-05-12 | 1994-09-27 | North Carolina State University Of Raleigh | Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same |
US5818072A (en) * | 1992-05-12 | 1998-10-06 | North Carolina State University | Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same |
JP2648683B2 (ja) * | 1992-12-04 | 1997-09-03 | 株式会社 半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3203078B2 (ja) * | 1992-12-09 | 2001-08-27 | 三洋電機株式会社 | 光起電力素子 |
DE10042733A1 (de) * | 2000-08-31 | 2002-03-28 | Inst Physikalische Hochtech Ev | Multikristalline laserkristallisierte Silicium-Dünnschicht-Solarzelle auf transparentem Substrat |
DE102005019225B4 (de) * | 2005-04-20 | 2009-12-31 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Heterokontaktsolarzelle mit invertierter Schichtstrukturgeometrie |
JP2010518609A (ja) * | 2007-02-08 | 2010-05-27 | ウーシー・サンテック・パワー・カンパニー・リミテッド | ハイブリッドシリコン太陽電池及び該ハイブリッドシリコン太陽電池の製造方法 |
US8253010B2 (en) | 2007-11-23 | 2012-08-28 | Big Sun Energy Technology Inc. | Solar cell with two exposed surfaces of ARC layer disposed at different levels |
US8481357B2 (en) * | 2008-03-08 | 2013-07-09 | Crystal Solar Incorporated | Thin film solar cell with ceramic handling layer |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5143090A (es) * | 1974-10-09 | 1976-04-13 | Sony Corp | |
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
US4142195A (en) * | 1976-03-22 | 1979-02-27 | Rca Corporation | Schottky barrier semiconductor device and method of making same |
GB2030766A (en) * | 1978-09-02 | 1980-04-10 | Plessey Co Ltd | Laser treatment of semiconductor material |
US4166919A (en) * | 1978-09-25 | 1979-09-04 | Rca Corporation | Amorphous silicon solar cell allowing infrared transmission |
-
1979
- 1979-09-21 DE DE19792938260 patent/DE2938260A1/de not_active Ceased
-
1980
- 1980-08-19 AT AT80104915T patent/ATE16329T1/de not_active IP Right Cessation
- 1980-08-19 EP EP80104915A patent/EP0025872B1/de not_active Expired
- 1980-09-19 ES ES495215A patent/ES495215A0/es active Granted
- 1980-09-19 US US06/188,725 patent/US4620058A/en not_active Expired - Lifetime
- 1980-09-19 JP JP12941480A patent/JPS5681981A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
DE2938260A1 (de) | 1981-03-26 |
EP0025872B1 (de) | 1985-10-30 |
ES495215A0 (es) | 1981-06-16 |
JPS5681981A (en) | 1981-07-04 |
EP0025872A2 (de) | 1981-04-01 |
EP0025872A3 (en) | 1982-02-10 |
ATE16329T1 (de) | 1985-11-15 |
JPH0117272B2 (es) | 1989-03-29 |
US4620058A (en) | 1986-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD1A | Patent lapsed |
Effective date: 19970203 |