JPS57115877A - Combined element of semiconductor photocell and thermal generator - Google Patents

Combined element of semiconductor photocell and thermal generator

Info

Publication number
JPS57115877A
JPS57115877A JP56002420A JP242081A JPS57115877A JP S57115877 A JPS57115877 A JP S57115877A JP 56002420 A JP56002420 A JP 56002420A JP 242081 A JP242081 A JP 242081A JP S57115877 A JPS57115877 A JP S57115877A
Authority
JP
Japan
Prior art keywords
light
heat
semiconductors
semiconductor
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56002420A
Other languages
Japanese (ja)
Inventor
Fumio Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56002420A priority Critical patent/JPS57115877A/en
Publication of JPS57115877A publication Critical patent/JPS57115877A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To convert both energies of light and heat which are natural energy into electricity, by incorporating the semiconductor photocell which converts the light into electrical energy and a semiconductor thermal generator which converts the heat to the electrical energy into one unit. CONSTITUTION:A frame shaped case 18 having a pillar shaped body at the center is formed by using a material which protects and insulates the semiconductors. The P type semiconductor 13 and the N type semiconductor 14 are coupled into the case 18 so as to hold the central pillar shaped body. Outer electrodes 16 and 17 are deposited on the lower surfaces of said semiconductors, respectively. Then a metal electrode 15 is contacted on the surfaces of the semiconductors 13 and 14 so as to short them. Bonding resin 19 which is a good thermal conductor but is an electrical insulator is applied on the electrode 15. A PN junction semiconductor chip 10 having external electrodes 11 is mounted via a basic material which absorbs the light and heat. Then a case 12 which absorbs the light and heat and has a transparent window is placed on the top. In this constitution, an optical e.m.f. is obtained from the light irradiated on the chip 10, and Joule's heat generated in the chip 10 is converted into a thermal e.m.f. by the semiconductors 13 and 14, and both are led out of the electrodes 15-17.
JP56002420A 1981-01-09 1981-01-09 Combined element of semiconductor photocell and thermal generator Pending JPS57115877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56002420A JPS57115877A (en) 1981-01-09 1981-01-09 Combined element of semiconductor photocell and thermal generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56002420A JPS57115877A (en) 1981-01-09 1981-01-09 Combined element of semiconductor photocell and thermal generator

Publications (1)

Publication Number Publication Date
JPS57115877A true JPS57115877A (en) 1982-07-19

Family

ID=11528752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56002420A Pending JPS57115877A (en) 1981-01-09 1981-01-09 Combined element of semiconductor photocell and thermal generator

Country Status (1)

Country Link
JP (1) JPS57115877A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009176430A (en) * 2008-01-21 2009-08-06 Hitachi Zosen Corp Energy conversion element and method of manufacturing the same
EP2009709A3 (en) * 2007-06-29 2011-05-18 Gerhard Span Thermo-electric element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2009709A3 (en) * 2007-06-29 2011-05-18 Gerhard Span Thermo-electric element
US8373057B2 (en) 2007-06-29 2013-02-12 Gerhard Span Thermoelectric element
US8766083B2 (en) 2007-06-29 2014-07-01 Gerhard Span Thermoelectric element
JP2009176430A (en) * 2008-01-21 2009-08-06 Hitachi Zosen Corp Energy conversion element and method of manufacturing the same

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